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IGBT. MMG75J120U Datasheet

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IGBT. MMG75J120U Datasheet






MMG75J120U IGBT. Datasheet pdf. Equivalent




MMG75J120U IGBT. Datasheet pdf. Equivalent





Part

MMG75J120U

Description

IGBT



Feature


April 2015 PRODUCT FEATURES □ High Sho rt Circuit Capability □ Free wheeling diodes with fast and soft reverse reco very □ VCE(sat) with positive tempera ture coefficient □ Ultra Low Loss,Hig h Ruggedness □ Popular SOT-227 Packag e Version 01 MMG75J120U 1200V 75A IGB T Module RoHS Compliant APPLICATIONS Invertor Convertor □ Welder SMPS a nd UPS □ Induction Heating IGBT.
Manufacture

MacMic

Datasheet
Download MMG75J120U Datasheet


MacMic MMG75J120U

MMG75J120U; -inverter ABSOLUTE MAXIMUM RATINGS Sym bol Parameter/Test Conditions VCES C ollector Emitter Voltage TJ=25℃ VGE S Gate Emitter Voltage IC DC Collect or Current TC=25℃ TC=80℃ ICM Rep etitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Valu es Unit 1200 ±20 V 105 75 A 15 0 630 W Diode-inverter .


MacMic MMG75J120U

ABSOLUTE MAXIMUM RATINGS Symbol Param eter/Test Conditions T C =25°C unless otherwise specified Values Unit VRR M Repetitive Reverse Voltage TJ=25℃ 1200 V IF(AV) IFRM I2t Average For ward Current Repetitive Peak Forward Cu rrent TC=25℃ tp=1ms TJ =125℃, t=10 ms, VR=0V 75 150 A 880 A2S MacMic Science & Technology Co., Ltd. Add: #18, Hua Shan Zhong Lu, New.


MacMic MMG75J120U

District, Changzhou City, Jiangsu Provi nce, P. R .of China 1 Tel.:+86-519- 85163708 Fax:+86-519-85162291 Post Co de:213022 Website:www.macmicst.com MMG75J120U IGBT-inverter ELECTRICAL C HARACTERISTICS Symbol Parameter/Test Conditions T C =25°C unless otherwise specified Min. Typ. Max. Unit VGE(th) VCE(sat) Gate Emitter Threshold Volta ge Collector Emitter Satura.

Part

MMG75J120U

Description

IGBT



Feature


April 2015 PRODUCT FEATURES □ High Sho rt Circuit Capability □ Free wheeling diodes with fast and soft reverse reco very □ VCE(sat) with positive tempera ture coefficient □ Ultra Low Loss,Hig h Ruggedness □ Popular SOT-227 Packag e Version 01 MMG75J120U 1200V 75A IGB T Module RoHS Compliant APPLICATIONS Invertor Convertor □ Welder SMPS a nd UPS □ Induction Heating IGBT.
Manufacture

MacMic

Datasheet
Download MMG75J120U Datasheet




 MMG75J120U
April 2015
PRODUCT FEATURES
High Short Circuit Capability
Free wheeling diodes with fast and soft reverse recovery
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Popular SOT-227 Package
Version 01
MMG75J120U
1200V 75A IGBT Module
RoHS Compliant
APPLICATIONS
Invertor Convertor
Welder SMPS and UPS
Induction Heating
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
±20
V
105
75
A
150
630
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
I2t
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
TJ =125, t=10ms, VR=0V
75
150
A
880
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG75J120U
MMG75J120U
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=3mA
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=75A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
5.0 6.2
1.8
2.0
-400
3
0.75
5.52
260
100
110
60
60
410
450
60
75
5.5
7
4.8
7.0
420
7.0
2.4 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.2 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=75A , VGE=0V, TJ=25
IF=75A , VGE=0V, TJ=125
IF=75A , VR=600V
dIF/dt=-1500A/μs
TJ =125
Reverse Recovery Energy
Junction to Case Thermal Resistance Per Diode
2.05 2.5
2.00
V
125
ns
90
A
11
µC
4.4
mJ
0.5 K /W
2




 MMG75J120U
MMG75J120U
MODULE CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
150
-40~125
-40~125
3000
V
Torque
to heatsink
to terminal
RecommendedM4
RecommendedM4
0.7~1.1
Nm
0.7~1.1
Nm
Weight
26.5
g
150
25
125
125
100
75
50
25
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
150
125
VCE=20V
100
75
50
25
25
125
0
7 8 9 10 11 12 13
VGEV
Figure 3. Typical Transfer characteristics
IGBT-inverter
150
125
100
75
50
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=125
25
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
20
VCE=600V
16
IC=75A
VGE=±15V
TJ=125
12
8
4
Eon
Eoff
0
0 10 20 30 40 50
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3






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