IGBT
September 2020
PRODUCT FEATURES
□ IGBT CHIP(Trench+Field Stop technology) □ Low switching losses □ Low saturation voltag...
Description
September 2020
PRODUCT FEATURES
□ IGBT CHIP(Trench+Field Stop technology) □ Low switching losses □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Popular SOT-227 Package
MMG75J120U6TC
Version 02
1200V 75A IGBT Module RoHS Compliant
APPLICATIONS
□ AC motor control □ Motion/servo control □ Inverter and power supplies
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃, TJmax=175℃ TC=95℃, TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1200 V
±20
110
75
A
150
385
W
Diode
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms TJ =125℃, t=10ms, VR=0V
Values
Unit
1200
V
75 A
150
1250
A2S
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
MMG75J120U6TC
MMG75J120U6TC
IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emit...
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