DatasheetsPDF.com

IGBT. MMG75J120UZ6TN Datasheet

DatasheetsPDF.com

IGBT. MMG75J120UZ6TN Datasheet






MMG75J120UZ6TN IGBT. Datasheet pdf. Equivalent




MMG75J120UZ6TN IGBT. Datasheet pdf. Equivalent





Part

MMG75J120UZ6TN

Description

IGBT



Feature


June 2019 PRODUCT FEATURES □ IGBT3 Chi p(Trench+Field Stop technology) □ Low switching losses □ VCE(sat) with pos itive temperature coefficient □ Fast switching and short tail current □ Po pular SOT-227 Package APPLICATIONS □ AC motor control □ Motion/servo contr ol □ Inverter and power supplies MMG 75J120UZ6TN Version 01 1200V 75A IGBT Module RoHS Compliant IGBT ABSO.
Manufacture

MacMic

Datasheet
Download MMG75J120UZ6TN Datasheet


MacMic MMG75J120UZ6TN

MMG75J120UZ6TN; LUTE MAXIMUM RATINGS(T C =25°C unless o therwise specified) Symbol Parameter/ Test Conditions VCES VGES Collector E mitter Voltage Gate Emitter Voltage TJ =25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=2 5℃,TJmax=150℃ TC=80℃,TJmax=150℃ tp=1ms Ptot Power Dissipation Per IG BT TC=25℃,TJmax=150℃ Values Unit 1200 V ±20 105 75 A 150 34.


MacMic MMG75J120UZ6TN

8 W MODULE CHARACTERISTICS(T C =25°C unless otherwise specified) Symbol Pa rameter/Test Conditions TJmax Max. Jun ction Temperature TJop Operating Temp erature Tstg Storage Temperature Vis ol Isolation Breakdown Voltage AC, 50 Hz(R.M.S), t=1minute to heatsink Torqu e to terminal Recommended(M4) Reco mmended(M4) Weight Values Unit 150 -40~125 °C -40~125 .


MacMic MMG75J120UZ6TN

3000 V 0.7~1.1 Nm 0.7~1.1 Nm 26.5 g MacMic Science & Technology Co., Lt d. Add:#18, Hua Shan Zhong Lu, New D istrict, Changzhou City, Jiangsu Provin ce, P. R .of China 1 Tel.:+86-519-8 5163708 Fax:+86-519-85162291 Post Cod e:213022 Website :www.macmicst.com MMG75J120UZ6TN IGBT ELECTRICAL CHARA CTERISTICS (T C =25°C unless otherwise specified) Symbol Paramete.

Part

MMG75J120UZ6TN

Description

IGBT



Feature


June 2019 PRODUCT FEATURES □ IGBT3 Chi p(Trench+Field Stop technology) □ Low switching losses □ VCE(sat) with pos itive temperature coefficient □ Fast switching and short tail current □ Po pular SOT-227 Package APPLICATIONS □ AC motor control □ Motion/servo contr ol □ Inverter and power supplies MMG 75J120UZ6TN Version 01 1200V 75A IGBT Module RoHS Compliant IGBT ABSO.
Manufacture

MacMic

Datasheet
Download MMG75J120UZ6TN Datasheet




 MMG75J120UZ6TN
June 2019
PRODUCT FEATURES
IGBT3 Chip(Trench+Field Stop technology)
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Popular SOT-227 Package
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG75J120UZ6TN
Version 01
1200V 75A IGBT Module
RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=150
TC=80,TJmax=150
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=150
Values
Unit
1200
V
±20
105
75
A
150
348
W
MODULE CHARACTERISTICS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
to heatsink
Torque
to terminal
RecommendedM4
RecommendedM4
Weight
Values
Unit
150
-40~125
°C
-40~125
3000
V
0.7~1.1
Nm
0.7~1.1
Nm
26.5
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG75J120UZ6TN
MMG75J120UZ6TN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=75A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.7
1.9
10
0.7
5.3
200
260
290
30
50
420
520
70
90
6.6
9.4
6.8
8.0
300
Max. Unit
6.5
2.15 V
1
mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.36 K /W
2




 MMG75J120UZ6TN
150
25
125
125
100
75
MMG75J120UZ6TN
150
125
100
75
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
50
50
25
VGE=15V
25
TJ=125
0
0
1
2
3
VCEV
Figure 1. Typical Output Characteristics IGBT
150
125
VCE=20V
100
75
50
25
25
125
0
6
7
8
9 10 11 12
VGEV
Figure 3. Typical Transfer characteristics IGBT
25
VCE=600V
20
Rg=4.7
VGE=±15V
TJ=125
15
Eon
10
Eoff
5
0
0 25 50 75 100 125 150
ICA
Figure 5. Switching Energy vs Collector Current IGBT
3
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
25
VCE=600V
IC=75A
20 VGE=±15V
TJ=125
15
10
5
Eon
Eoff
0
0
10
20
30
40
50
Rg
Figure 4. Switching Energy vs Gate Resistor IGBT
175
150
125
Rg=4.7
VGE=±15V
100
TJ=125
75
50
25
0
0 200 400 600 800 1000 1200 1400
VCEV
Figure 6. Reverse Biased Safe Operating Area IGBT






Recommended third-party MMG75J120UZ6TN Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)