IGBT
June 2019
PRODUCT FEATURES
□ IGBT3 Chip(Trench+Field Stop technology) □ Low switching losses □ VCE(sat) with positive te...
Description
June 2019
PRODUCT FEATURES
□ IGBT3 Chip(Trench+Field Stop technology) □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Popular SOT-227 Package
APPLICATIONS
□ AC motor control □ Motion/servo control □ Inverter and power supplies
MMG75J120UZ6TN
Version 01
1200V 75A IGBT Module RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES VGES
Collector Emitter Voltage Gate Emitter Voltage
TJ=25℃
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25℃,TJmax=150℃ TC=80℃,TJmax=150℃ tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃,TJmax=150℃
Values
Unit
1200 V
±20
105
75
A
150
348
W
MODULE CHARACTERISTICS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
to heatsink Torque
to terminal
Recommended(M4) Recommended(M4)
Weight
Values
Unit
150
-40~125
°C
-40~125
3000
V
0.7~1.1
Nm
0.7~1.1
Nm
26.5
g
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website :www.macmicst.com
MMG75J120UZ6TN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
V...
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