IGBT
November 2018
PRODUCT FEATURES
□ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive tempe...
Description
November 2018
PRODUCT FEATURES
□ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery
MMG75S120B6UC
Preliminary
1200V 75A IGBT Module RoHS Compliant
APPLICATIONS
□ Welding Machine □ Power Supplies □ Others
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES VGES
Collector Emitter Voltage Gate Emitter Voltage
TJ=25℃
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25℃,TJmax=175℃ TC=90℃,TJmax=175℃ tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃,TJmax=175℃
Values
Unit
1200 V
±20
110
75
A
150
405
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125℃, t=10ms, VR=0V
Values
Unit
1200
V
75 A
150
1150
A2S
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website :www.macmicst.com
MMG75S120B6UC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3mA
VCE(sat)
Collector E...
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