MMG75S120B6UC

November 2018 PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery MMG75S120B6UC Preliminary 1200V 75A IGBT Module RoHS Compliant APPLICATIONS □ Welding Machine □ Power Supplies □ Others IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃,TJmax=175℃ TC=90℃,TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃,TJmax=175℃ Values Unit 1200 V ±20 110 75 A 150 405 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 75 A 150 1150 A2S MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.macmicst.com MMG75S120B6UC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=3mA VCE(sat) Collector E...