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IGBT. MMG100D120B6HN Datasheet

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IGBT. MMG100D120B6HN Datasheet






MMG100D120B6HN IGBT. Datasheet pdf. Equivalent




MMG100D120B6HN IGBT. Datasheet pdf. Equivalent





Part

MMG100D120B6HN

Description

IGBT



Feature


April 2015 MMG100D120B6HN Version 01 1200V 100A IGBT Module RoHS Compliant PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(T4 Fast Trench+F ield Stop technology) □ VCE(sat) with positive temperature coefficient □ F ast switching and short tail current Free wheeling diodes with fast and so ft reverse recovery □ Low sw.
Manufacture

MacMic

Datasheet
Download MMG100D120B6HN Datasheet


MacMic MMG100D120B6HN

MMG100D120B6HN; itching losses □ TJmax =175°C APPLIC ATIONS □ High frequency switching app lication □ Medical applications □ M otion/servo control □ UPS systems IG BT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Coll ector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current .


MacMic MMG100D120B6HN

tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 1200 ±20 V 150 100 A 200 650 W Diode-inverter ABSOL UTE MAXIMUM RATINGS Symbol Parameter/ Test Conditions T C =25°C unless othe rwise specified Values Unit VRRM Re petitive Reverse Voltage TJ=25℃ 120 0 V IF(AV) IFRM I2t Average Forward Current Repetitive Peak.


MacMic MMG100D120B6HN

Forward Current TC=25℃ tp=1ms TJ =12 5℃, t=10ms, VR=0V 100 200 A 2100 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Prov ince, P. R .of China 1 Tel.:+86-519 -85163708 Fax:+86-519-85162291 Post C ode:213022 Website:www.macmicst.com MMG100D120B6HN IGBT-inverter ELECTRI CAL CHARACTERISTICS Symbol Par.

Part

MMG100D120B6HN

Description

IGBT



Feature


April 2015 MMG100D120B6HN Version 01 1200V 100A IGBT Module RoHS Compliant PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(T4 Fast Trench+F ield Stop technology) □ VCE(sat) with positive temperature coefficient □ F ast switching and short tail current Free wheeling diodes with fast and so ft reverse recovery □ Low sw.
Manufacture

MacMic

Datasheet
Download MMG100D120B6HN Datasheet




 MMG100D120B6HN
April 2015
MMG100D120B6HN
Version 01
1200V 100A IGBT Module
RoHS Compliant
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(T4 Fast Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
TJmax =175°C
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
±20
V
150
100
A
200
650
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
I2t
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
TJ =125, t=10ms, VR=0V
100
200
A
2100
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG100D120B6HN
MMG100D120B6HN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=4mA
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=100A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
5.4 6.0
2.1
2.5
-400
2
0.47
5.6
320
60
70
80
50
55
60
320
360
400
40
60
70
9
10
6
6.6
400
6.5
2.5 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.22 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=100A , VGE=0V, TJ=25
IF=100A , VGE=0V, TJ=125
IF=100A , VR=600V
dIF/dt=-1700A/μs
TJ =125
Reverse Recovery Energy
Junction to Case Thermal Resistance Per Diode
1.65 2.15
1.65
V
300
ns
120
A
20
µC
8
mJ
0.39 K /W
2




 MMG100D120B6HN
MMG100D120B6HN
MODULE CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
175
-40~150
-40~125
3000
V
CTI
Comparative Tracking Index
225
Torque
to heatsink
to terminal
RecommendedM6
RecommendedM6
3~5
Nm
2.5~5
Nm
Weight
300
g
200
25
150
125
100
50
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
200
VCE=20V
150
100
50
25
125
0
6 7 8 9 10 11 12 13
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
200
150
100
50
Vge=17V
Vge=15V
Vge=13V
Vge=10V
Vge=8V
TJ=125
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
40
VCE=600V
IC=100A
30
VGE=±15V
TJ=125
20
10
Eon
Eoff
0
0
10
20
30
40
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3



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