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IGBT. MMG100HB060B6EN Datasheet

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IGBT. MMG100HB060B6EN Datasheet






MMG100HB060B6EN IGBT. Datasheet pdf. Equivalent




MMG100HB060B6EN IGBT. Datasheet pdf. Equivalent





Part

MMG100HB060B6EN

Description

IGBT



Feature


February 2017 PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self lim iting short circuit current □ VCE(sat ) with positive temperature coefficient □ Fast switching and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Low switc hing losses □ Temperature sense inclu ded APPLICATIONS □ High frequenc.
Manufacture

MacMic

Datasheet
Download MMG100HB060B6EN Datasheet


MacMic MMG100HB060B6EN

MMG100HB060B6EN; y switching application □ Medical appl ications □ Motion/servo control □ U PS systems MMG100HB060B6EN Version 2 600V 100A IGBT Module RoHS Compliant IGBT-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VC ES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Col lector Current TC=25℃, TJm.


MacMic MMG100HB060B6EN

ax=175℃ TC=70℃, TJmax=175℃ ICM R epetitive Peak Collector Current tp=1m s Ptot Power Dissipation Per IGBT TC =25℃, TJmax=175℃ Values Unit 600 V ±20 125 100 A 200 330 W Diod e-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current .


MacMic MMG100HB060B6EN

IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 600 V 100 A 200 1000 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Prov ince, P. R .of China 3 Tel.:+86-519 -85163708 Fax:+86-519-85162291 Post C ode:213022 Website:www.macmicst.com MMG100HB060B6EN IGBT-invert.

Part

MMG100HB060B6EN

Description

IGBT



Feature


February 2017 PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self lim iting short circuit current □ VCE(sat ) with positive temperature coefficient □ Fast switching and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Low switc hing losses □ Temperature sense inclu ded APPLICATIONS □ High frequenc.
Manufacture

MacMic

Datasheet
Download MMG100HB060B6EN Datasheet




 MMG100HB060B6EN
February 2017
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
Temperature sense included
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
MMG100HB060B6EN
Version 2
600V 100A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=70, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
600
V
±20
125
100
A
200
330
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
600
V
100
A
200
1000
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
3
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG100HB060B6EN
MMG100HB060B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=100A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=100A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=100A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=100A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.9
-400
Typ.
5.8
1.45
1.6
2
1.1
6.2
190
70
80
20
20
260
290
70
70
0.3
0.7
2.5
3.35
500
Max. Unit
6.5
1.9
V
1
mA
5
mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.45 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=100A , VGE=0V, TJ=25
IF=100A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
IF=100A , VR=300V
dIF/dt=-5100A/μs
TJ =125
Erec
Reverse Recovery Energy
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.55 1.95
V
1.50
130
ns
150
A
8
µC
2.25
mJ
0.8 K /W
4




 MMG100HB060B6EN
MMG100HB060B6EN
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
3000
V
2.5~5
Nm
3~5
Nm
200
g
200
25
150
125
100
50
VGE=15V
0
0
1
2
3
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
5
200
Vge=17V
Vge=15V
150
Vge=13V
Vge=11V
100
Vge=9V
50
TJ=125
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter






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