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MMG100J120U6TC

MacMic

IGBT

July 2020 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ Low switching losses □ Low saturation voltage and...


MacMic

MMG100J120U6TC

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July 2020 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ Low switching losses □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Popular SOT-227 Package APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies MMG100J120U6TC Version 01 1200V 100A IGBT Module RoHS Compliant IGBT ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃,TJmax=175℃ TC=95℃,TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT TC=25℃,TJmax=175℃ Values Unit 1200 V ±20 147 100 A 200 515 W Diode ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t tp=1ms TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 100 A 200 2450 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com MMG100J120U6TC MMG100J120U6TC IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter...




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