DatasheetsPDF.com

IGBT. MMG100S120UA6TC Datasheet

DatasheetsPDF.com

IGBT. MMG100S120UA6TC Datasheet






MMG100S120UA6TC IGBT. Datasheet pdf. Equivalent




MMG100S120UA6TC IGBT. Datasheet pdf. Equivalent





Part

MMG100S120UA6TC

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG100S120UA6TC Datasheet


MacMic MMG100S120UA6TC

MMG100S120UA6TC; August 2020 PRODUCT FEATURES □ IGBT CH IP(Trench+Field Stop technology) □ VC E(sat) with positive temperature coeffi cient □ High short circuit capability □ Fast switching and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Low switc hing losses APPLICATIONS □ High frequ ency switching application □ Medical applications □ Motion/servo contro.


MacMic MMG100S120UA6TC

l □ UPS systems MMG100S120UA6TC Vers ion 01 1200V 100A IGBT Module RoHS Com pliant IGBT ABSOLUTE MAXIMUM RATINGS( T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCE S VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Colle ctor Current ICM Repetitive Peak Coll ector Current TC=25℃, TJmax=175℃ T C=95℃, TJmax=175℃ tp=1ms P.


MacMic MMG100S120UA6TC

tot Power Dissipation Per IGBT TC=25 , TJmax=175℃ Values Unit 1200 V 20 147 100 A 200 515 W Diode A BSOLUTE MAXIMUM RATINGS (T C =25°C unl ess otherwise specified) Symbol Param eter/Test Conditions VRRM Repetitive R everse Voltage TJ=25℃ IF(AV) Avera ge Forward Current IFRM Repetitive Pe ak Forward Current tp=1ms I2t TJ =12 5℃, t=10ms, VR=0V Values .



Part

MMG100S120UA6TC

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG100S120UA6TC Datasheet




 MMG100S120UA6TC
August 2020
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
High short circuit capability
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
MMG100S120UA6TC
Version 01
1200V 100A IGBT Module
RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=95, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
147
100
A
200
515
W
Diode
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
100
A
200
2450
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com





 MMG100S120UA6TC
MMG100S120UA6TC
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=4mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
IC=100A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=100A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=100A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=100A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=100A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=800V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.8
2.1
2.15
7
0.53
7.1
300
160
180
190
50
52
54
350
390
410
100
160
180
14.5
16.5
8.1
8.6
420
Max. Unit
6.5
2.25
V
1
mA
10
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.29 K /W
Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=100A , VGE=0V, TJ =25
VF
Forward Voltage
IF=100A , VGE=0V, TJ =125
IF=100A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=100A , VR=600V
dIF/dt=-1950A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.75
2.3
1.5
V
1.45
280
ns
156
A
20.5
µC
6.4
mJ
0.5 K /W





 MMG100S120UA6TC
MMG100S120UA6TC
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM5
Weight
Values
Unit
175
-40~150
-40~125
3000
V
200
3~5
Nm
2.5~5
Nm
160
g
200
25
150
150
100
50
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT
3
200
Vge=17V
Vge=15V
150
Vge=13V
Vge=11V
100
Vge=9V
50
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT



Recommended third-party MMG100S120UA6TC Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)