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IGBT. MMG100S170B Datasheet

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IGBT. MMG100S170B Datasheet






MMG100S170B IGBT. Datasheet pdf. Equivalent




MMG100S170B IGBT. Datasheet pdf. Equivalent





Part

MMG100S170B

Description

IGBT



Feature


October 2018 PRODUCT FEATURES □ High s hort circuit capability,self limiting s hort circuit current □ IGBT CHIP(High ly rugged SPT+ design) □ VCE(sat) wit h positive temperature coefficient □ Ultra Low Loss,High Ruggedness □ Free wheeling diodes with fast and soft rev erse recovery Version 01 MMG100S170B 1700V 100A IGBT Module RoHS Compliant APPLICATIONS □ AC motor cont.
Manufacture

MacMic

Datasheet
Download MMG100S170B Datasheet


MacMic MMG100S170B

MMG100S170B; rol □ Motion/servo control □ Inverte r and power supplies □ Photovoltaic/F uel cell IGBT-inverter ABSOLUTE MAXIM UM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Cond itions VCES VGES Collector Emitter Vo ltage Gate Emitter Voltage TJ=25℃ I C DC Collector Current ICM Repetitiv e Peak Collector Current TC=25℃,TJma x=175℃ TC=100℃,TJmax=175℃ tp=.


MacMic MMG100S170B

1ms Ptot Power Dissipation Per IGBT T C=25℃,TJmax=175℃ Values Unit 170 0 V ±20 150 100 A 200 682 W Dio de-inverter ABSOLUTE MAXIMUM RATINGS ( T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRR M Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1m s I2t TJ =150℃, t=10ms, .


MacMic MMG100S170B

VR=0V Values Unit 1700 V 100 A 200 2450 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong L u, New District, Changzhou City, Jiangs u Province, P. R .of China 1 Tel.:+ 86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website :www.macmi cst.com MMG100S170B IGBT-inverter EL ECTRICAL CHARACTERISTICS (T C =25°C un less otherwise specified) Sy.

Part

MMG100S170B

Description

IGBT



Feature


October 2018 PRODUCT FEATURES □ High s hort circuit capability,self limiting s hort circuit current □ IGBT CHIP(High ly rugged SPT+ design) □ VCE(sat) wit h positive temperature coefficient □ Ultra Low Loss,High Ruggedness □ Free wheeling diodes with fast and soft rev erse recovery Version 01 MMG100S170B 1700V 100A IGBT Module RoHS Compliant APPLICATIONS □ AC motor cont.
Manufacture

MacMic

Datasheet
Download MMG100S170B Datasheet




 MMG100S170B
October 2018
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(Highly rugged SPT+ design)
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Free wheeling diodes with fast and soft reverse recovery
Version 01
MMG100S170B
1700V 100A IGBT Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=175
TC=100,TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1700
V
±20
150
100
A
200
682
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =150, t=10ms, VR=0V
Values
Unit
1700
V
100
A
200
2450
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG100S170B
MMG100S170B
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=4mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
IC=100A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=900V, IC=100A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=900V,IC=100A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=900V,IC=100A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=100A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=1000V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-500
Typ.
6.2
2.3
2.65
2.7
6
0.78
6.75
0.24
150
180
80
90
370
430
180
300
33
37
41
16
24
26
310
Max. Unit
7.4
2.7
V
1
mA
10 mA
500 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.22 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=100A , VGE=0V, TJ=25
VF
Forward Voltage
IF=100A , VGE=0V, TJ=125
IF=100A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=100A , VR=900V
dIF/dt=-1700A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.75
2.3
1.85
V
1.9
500
ns
152
A
54
µC
30
mJ
0.4 K /W
2




 MMG100S170B
MMG100S170B
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM5
Weight
Values
Unit
175
-40~150
-40~125
4000
V
200
3~5
Nm
2.5~5
Nm
160
g
200
25
150
150
100
50
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
200
Vge=17V
Vge=15V
150
Vge=13V
Vge=11V
100
Vge=9V
50
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter






Recommended third-party MMG100S170B Datasheet






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