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IGBT. MMG100W120X6TN Datasheet

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IGBT. MMG100W120X6TN Datasheet






MMG100W120X6TN IGBT. Datasheet pdf. Equivalent




MMG100W120X6TN IGBT. Datasheet pdf. Equivalent





Part

MMG100W120X6TN

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG100W120X6TN Datasheet


MacMic MMG100W120X6TN

MMG100W120X6TN; May 2015 MMG100W120X6TN Version 01 12 00V 100A Six-Pack Module RoHS Compliant PRODUCT FEATURES □ IGBT Chip(IGBT3 Trench+Field Stop technology),Diode C hip(Emcon3 wheeling diode) □ High lev el of integration—only one power semi conductor module required for the whole drive □ Low saturation voltage and p ositive temperature coefficient □ Fas t switching and short tail cur.


MacMic MMG100W120X6TN

rent □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB m ounting □ Temperature sense included APPLICATIONS □ AC motor control □ M otion/servo control □ Inverter and po wer supplies IGBT-inverter ABSOLUTE M AXIMUM RATINGS(T C =25°C unless otherw ise specified) Symbol Paramet.


MacMic MMG100W120X6TN

er/Test Conditions VCES Collector Emit ter Voltage TJ=25℃ VGES Gate Emitt er Voltage IC DC Collector Current T C=25℃ TC=80℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT Diode-inverter A BSOLUTE MAXIMUM RATINGS (T C =25°C unl ess otherwise specified) Symbol Param eter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ .



Part

MMG100W120X6TN

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG100W120X6TN Datasheet




 MMG100W120X6TN
May 2015
MMG100W120X6TN
Version 01
1200V 100A Six-Pack Module
RoHS Compliant
PRODUCT FEATURES
IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode)
High level of integration—only one power semiconductor module required for the whole drive
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
140
100
200
450
Unit
V
A
W
Values
1200
100
200
1850
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1





 MMG100W120X6TN
MMG100W120X6TN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=4mA
VCE(sat)
ICES
IGES
Collector Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=100A , VGE=±15V
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=100A
RG =3.9,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=600V,IC=100A
RG =3.9,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=100A
RG =3.9,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.7
1.9
7.5
0.9
7.1
0.3
260
290
30
50
420
520
70
90
7.8
10
8
10
Max. Unit
6.5
2.15 V
100 µA
10 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
400
A
0.28 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=100A , VGE=0V, TJ=25
IF=100A , VGE=0V, TJ=125
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=100A , VR=600V
dIF/dt=-2500A/μs
TJ =125
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.65
1.65
260
140
20
9
Max. Unit
2.15
V
ns
A
µC
mJ
0.5 K /W
2





 MMG100W120X6TN
MMG100W120X6TN
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
CTI
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
Comparative Tracking Index
AC, 50Hz(R.M.S), t=1minute
Md
Mounting Torque
RecommendedM5
Weight
Min. Typ. Max. Unit
5
K
3375
K
Values
150
-40~125
-40~125
3000
>225
2.5~5
300
Unit
V
Nm
g
200
25
150
125
100
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
200
150
100
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
50
TJ=125
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
200
VCE=20V
150
100
50
25
125
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
30
VCE=600V
25 IC=100A
VGE=±15V
20
TJ=125
15
10
Eon
5
Eoff
0
0
10
20
30
40
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3



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