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Power MOSFET. CSD22202W15 Datasheet

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Power MOSFET. CSD22202W15 Datasheet






CSD22202W15 MOSFET. Datasheet pdf. Equivalent




CSD22202W15 MOSFET. Datasheet pdf. Equivalent





Part

CSD22202W15

Description

P-Channel Power MOSFET



Feature


Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD22202W15 SLPS431B – JUN E 2013 – REVISED DECEMBER 2014 CSD222 02W15 P-Channel NexFET™ Power MOSFET 1 Features •1 Low Resistance • Sma ll Footprint 1.5 mm × 1.5 mm • Pb Fr ee • Gate ESD Protection • RoHS Com pliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Batter.
Manufacture

Texas Instruments

Datasheet
Download CSD22202W15 Datasheet


Texas Instruments CSD22202W15

CSD22202W15; y Management • Battery Protection • Load Switch Applications 3 Description The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with exc ellent thermal characteristics in an ul tra-low profile. Low on resistance coup led with the small footprint and low pr ofile make the device ideal for battery operated space constr.


Texas Instruments CSD22202W15

ained applications. Top View and Circui t Configuration G S S Source S S S Gate DDD Drain Product Summary TA = 25°C VDS Drain-to-Source Voltag e Qg Gate Charge Total (–4.5 V) Qg d Gate Charge Gate-to-Drain RDS(on) D rain-to-Source On-Resistance VGS(th) T hreshold Voltage TYPICAL VALUE –8 6.5 1 VGS = –2.5 V VGS = –4.5 V 0.8 14.5 10.2 UNIT V nC n.


Texas Instruments CSD22202W15

C mΩ mΩ V Device CSD22202W15 CSD222 02W15T Ordering Information(1) Qty M edia Package 3000 7-Inch Reel 250 7-I nch Reel 1.5 mm × 1.5 mm Wafer BGA Pa ckage Ship Tape and Reel (1) For all available packages, see the orderable a ddendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C un less otherwise stated VDS Drain-to-Sou rce Voltage VGS Gate-to.

Part

CSD22202W15

Description

P-Channel Power MOSFET



Feature


Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD22202W15 SLPS431B – JUN E 2013 – REVISED DECEMBER 2014 CSD222 02W15 P-Channel NexFET™ Power MOSFET 1 Features •1 Low Resistance • Sma ll Footprint 1.5 mm × 1.5 mm • Pb Fr ee • Gate ESD Protection • RoHS Com pliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Batter.
Manufacture

Texas Instruments

Datasheet
Download CSD22202W15 Datasheet




 CSD22202W15
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD22202W15
SLPS431B – JUNE 2013 – REVISED DECEMBER 2014
CSD22202W15 P-Channel NexFET™ Power MOSFET
1 Features
1 Low Resistance
• Small Footprint 1.5 mm × 1.5 mm
• Pb Free
• Gate ESD Protection
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
2 Applications
• Battery Management
• Battery Protection
• Load Switch Applications
3 Description
The device is designed to deliver the lowest on
resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra-low profile. Low on resistance coupled with the
small footprint and low profile make the device ideal
for battery operated space constrained applications.
Top View and Circuit Configuration
G
S
S
Source
S
S
S
Gate
DDD
Drain
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–8
6.5
1
VGS = –2.5 V
VGS = –4.5 V
–0.8
14.5
10.2
UNIT
V
nC
nC
m
m
V
Device
CSD22202W15
CSD22202W15T
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
250 7-Inch Reel
1.5 mm × 1.5 mm
Wafer BGA
Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C unless otherwise stated
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current(1)
ID
(Silicon Limitted)
Pulsed Drain Current(2)
IG
Continuous Gate Current(3)
PD
Power Dissipation(1)
TJ, Operating Junction and
Tstg Storage Temperature Range
VALUE
–8
–6
UNIT
V
V
–10
A
–48
–0.5
A
1.5
W
–55 to 150 °C
(1) RθJA = 75°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width 300 µs, duty cycle 2%
(3) Limited by gate resistance.
30
27
24
21
18
15
12
9
6
3
0
0
RDS(on) vs VGS
TC = 25°C Id = −2A
TC = 125ºC Id = −2A
1
2
3
4
5
6
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
5
ID = −2A
VDS =−4V
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD22202W15
CSD22202W15
SLPS431B – JUNE 2013 – REVISED DECEMBER 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD22202W15 Package Dimensions ...................... 8
7.2 Recommended Land Pattern .................................... 9
7.3 Tape and Reel Information ....................................... 9
4 Revision History
Changes from Revision A (July 2014) to Revision B
Page
• Corrected typo, test condition VDS is –6.4 V for IDDS ............................................................................................................. 3
• Corrected typo, test condition VGS is –6 V for IGSS ................................................................................................................ 3
Changes from Original (June 2013) to Revision A
Page
• Corrected "Drain to Drain Voltage" to state "Drain-to-Source Voltage" ................................................................................ 1
2
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Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: CSD22202W15




 CSD22202W15
www.ti.com
5 Specifications
CSD22202W15
SLPS431B – JUNE 2013 – REVISED DECEMBER 2014
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
BVGSS
IDDS
IGSS
VGS(th)
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
RDS(on) Drain-to-Source On-Resistance
gƒs
Transconductance
DYNAMIC CHARACTERISTICS
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
RG
Series Gate Resistance
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge - Gate-to-Drain
Qgs
Gate Charge - Gate-to-Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tƒ
Fall Time
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
TEST CONDITIONS
VGS = 0 V, IDS = –250 μA
VDS = 0 V, IG = –250 μA
VGS = 0 V, VDS = –6.4 V
VDS = 0 V, VGS = –6 V
VDS = VGS, IDS = –250 μA
VGS = –2.5 V, IDS = –2 A
VGS = –4.5 V, IDS = –2 A
VDS = –4 V, IDS = –2 A
VGS = 0 V, VDS = –4 V,
ƒ = 1 MHz
VDS = –4 V,
ID = –2 A
VDS = –4 V, VGS = 0 V
VDS = –4 V, VGS = –4.5 V,
IDS = –2 A, RG = 10
IDS = –2 A, VGS = 0 V
VDS = –4 V, IF = –2 A,
di/dt = 200 A/μs
MIN TYP MAX UNIT
–8
V
–6
V
–1 μA
–100 nA
–0.6 –0.8 –1.1 V
14.5 17.4 m
10.2 12.2 m
15.3
S
1060 1390 pF
588 765 pF
192 250 pF
28
Ω
6.5 8.4 nC
1
nC
1.6
nC
0.8
nC
2.7
nC
10.4
ns
8.4
ns
109
ns
38
ns
–0.75
22
19
–1 V
nC
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJA
Junction-to-Ambient Thermal Resistance(1)
Junction-to-Ambient Thermal Resistance(2)
(1) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
TYPICAL VALUES
75
210
UNIT
°C/W
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: CSD22202W15
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