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Power MOSFET. CSD22204W Datasheet

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Power MOSFET. CSD22204W Datasheet






CSD22204W MOSFET. Datasheet pdf. Equivalent




CSD22204W MOSFET. Datasheet pdf. Equivalent





Part

CSD22204W

Description

P-Channel Power MOSFET



Feature


Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD22204W –8 V P-Channel N exFET™ Power MOSFET CSD22204W SLPS55 9 – MARCH 2015 1 Features •1 Low R esistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protec tion • RoHS Compliant • Halogen Fre e • Gate-Source Voltage Clamp 2 Appl ications • Battery Management • Battery.
Manufacture

Texas Instruments

Datasheet
Download CSD22204W Datasheet


Texas Instruments CSD22204W

CSD22204W; Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1 .5 mm × 1.5 mm device is designed to d eliver the lowest on resistance and gat e charge in the smallest outline possib le with excellent thermal characteristi cs in an ultra low profile. Low onresis tance coupled with the small footprint and low profile make the device ideal f or battery operated spac.


Texas Instruments CSD22204W

e constrained applications. Top View an d Circuit Configuration G S S Sourc e S S S Gate Product Summary TA = 25°C VDS Drain-to-Source Voltage Q g Gate Charge Total (–4.5 V) Qgd G ate Charge Gate-to-Drain RDS(on) Drain -to-Source On-Resistance VGS(th) Thres hold Voltage TYPICAL VALUE –8 18.9 4.2 VGS = –2.5 V VGS = –4.5 V 0.7 11.5 8.2 UNIT V nC nC .


Texas Instruments CSD22204W

mΩ mΩ V Device CSD22204W CSD22204WT Ordering Information(1) Qty Media Package 3000 7-Inch Reel 250 7-Inch Re el 1.5 mm × 1.5 mm Wafer BGA Package Ship Tape and Reel (1) For all availa ble packages, see the orderable addendu m at the end of the data sheet. . Abso lute Maximum Ratings TA = 25°C VDS D rain-to-Source Voltage VGS Gate-to-Sou rce Voltage Continuous .

Part

CSD22204W

Description

P-Channel Power MOSFET



Feature


Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD22204W –8 V P-Channel N exFET™ Power MOSFET CSD22204W SLPS55 9 – MARCH 2015 1 Features •1 Low R esistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protec tion • RoHS Compliant • Halogen Fre e • Gate-Source Voltage Clamp 2 Appl ications • Battery Management • Battery.
Manufacture

Texas Instruments

Datasheet
Download CSD22204W Datasheet




 CSD22204W
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD22204W –8 V P-Channel NexFET™ Power MOSFET
CSD22204W
SLPS559 – MARCH 2015
1 Features
1 Low Resistance
• Small Footprint 1.5 mm × 1.5 mm
• Pb Free
• Gate ESD Protection
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
2 Applications
• Battery Management
• Battery Protection
• Load Switch Applications
3 Description
This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is
designed to deliver the lowest on resistance and gate
charge in the smallest outline possible with excellent
thermal characteristics in an ultra low profile. Low on-
resistance coupled with the small footprint and low
profile make the device ideal for battery operated
space constrained applications.
Top View and Circuit Configuration
G
S
S
Source
S
S
S
Gate
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–8
18.9
4.2
VGS = –2.5 V
VGS = –4.5 V
–0.7
11.5
8.2
UNIT
V
nC
nC
m
m
V
Device
CSD22204W
CSD22204WT
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
250 7-Inch Reel
1.5 mm × 1.5 mm
Wafer BGA
Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current(1)
ID
Pulsed Drain Current(2)
VALUE
–8
–6
–5
–80
UNIT
V
V
A
A
PD Power Dissipation
TJ, Operating Junction and
Tstg Storage Temperature Range
1.7
W
–55 to 150 °C
(1) Device operating at a temperature of 105ºC.
(2) Typ RθJA = 75°C/W, Pulse width 100 μs, duty cycle 1%.
DDD
Drain
RDS(on) vs VGS
32
TC = 25°C, I D = -2 A
28
TC = 125°C, I D = -2 A
24
20
16
12
8
4
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
-VGS - Gate-To-Source Voltage (V)
D007
1
4.5
4
ID = -2 A
VDS = -4 V
3.5
3
2.5
2
1.5
1
0.5
0
024
Gate Charge
6 8 10 12 14 16 18 20
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD22204W
CSD22204W
SLPS559 – MARCH 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD22204W Package Dimensions .......................... 8
7.2 Recommended Land Pattern .................................... 9
7.3 Tape and Reel Information ....................................... 9
4 Revision History
DATE
March 2015
REVISION
*
NOTES
Initial release.
2
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Product Folder Links: CSD22204W
Copyright © 2015, Texas Instruments Incorporated




 CSD22204W
www.ti.com
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
BVGSS
IDSS
IGSS
VGS(th)
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
RDS(on) Drain-to-Source On-Resistance
gƒs
Transconductance
DYNAMIC CHARACTERISTICS
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
RG
Series Gate Resistance
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge - Gate-to-Drain
Qgs
Gate Charge - Gate-to-Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tƒ
Fall Time
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
TEST CONDITIONS
VGS = 0 V, IDS = –250 μA
VDS = 0 V, IG = –5 μA
VGS = 0 V, VDS = –6.4 V
VDS = 0 V, VGS = –6 V
VDS = VGS, IDS = –250 μA
VGS = –2.5 V, IDS = –2 A
VGS = –4.5 V, IDS = –2 A
VDS = –0.8 V, IDS = –2 A
VGS = 0 V, VDS = –4 V,
ƒ = 1 MHz
VDS = –4 V,
ID = –2 A
VDS = –4 V, VGS = 0 V
VDS = –4 V, VGS = –4.5 V,
IDS = –2 A, RG = 0 Ω
IDS = –2 A, VGS = 0 V
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJA
Junction-to-Ambient Thermal Resistance(1)
Junction-to-Ambient Thermal Resistance(2)
(1) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
CSD22204W
SLPS559 – MARCH 2015
MIN TYP MAX UNIT
–8
V
–6
V
–1 μA
–4 μA
–0.45 –0.7 –0.95 V
11.5 14.0 m
8.2 9.9 m
18
S
870 1130 pF
445 580 pF
204 265 pF
300
Ω
18.9 24.6 nC
4.2
nC
3.2
nC
0.7
nC
3.1
nC
58
ns
600
ns
3450
ns
2290
ns
–0.7 –1.0 V
TYPCIAL VALUES
75
230
UNIT
°C/W
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD22204W
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