CSD22204W

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD22204W –8 V P-Channel NexFET™ Power MOSFET CSD22204W SLPS559 – MARCH 2015 1 Features 1 Low Resistance Small Footprint 1.5 mm × 1.5 mm Pb Free Gate ESD Protection RoHS Compliant Halogen Free Gate-Source Voltage Clamp 2 Applications Battery Management Battery Protection Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low onresistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. Top View and Circuit Configuration G S S Source S S S Gate Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –8 18.9 4.2 VGS = –2.5 V VGS = –4.5 V –0.7 11.5 8.2 UNIT V nC nC mΩ mΩ V Device CSD22204W CSD22204WT Ordering Information(1) Qty Media Package 3000 7-Inch Reel 250 7-Inch Reel 1.5 mm × 1.5 mm Wafer BGA Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. . Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current(1) ID...