CSD23202W10

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23202W10 SLPS506 – AUGUST 2014 CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Small Footprint 1 mm × 1 mm Low Profile 0.62-mm Height Pb Free Gate ESD Protection – 3 kV RoHS Compliant Halogen Free 2 Applications Battery Management Load Switch Battery Protection 3 Description This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile. . Top View D D G S P0097-01 . . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source OnResistance VGS(th) Threshold Voltage TYPICAL VALUE –12 2.9 0.28 VGS = –1.5 V 82 VGS = –1.8 V 67 VGS = –2.5 V 54 VGS = –4.5 V 44 –0.60 UNIT V nC nC mΩ mΩ mΩ mΩ V Device CSD23202W10 CSD23202W10T Ordering Information(1) Qty Media Package 3000 7-Inch Reel 250 7-Inch Reel 1 × 1-mm Wafer Level Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(2) Continuous Gate Clamp Current IG Pulsed Gate Clamp Current PD Power Dissipation(1) TJ, Operating Junction an...