CSD23203W

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 CSD23203W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low RDS(on) Small Footprint Low Profile 0.62-mm Height Lead Free RoHS Compliant Halogen Free CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications Battery Management Load Switch Battery Protection 3 Description This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Voltage Threshold TYPICAL VALUE –8 4.9 0.6 VGS = –1.8 V VGS = –2.5 V VGS = –4.5 V –0.8 35 22 16.2 UNIT V nC nC mΩ mΩ mΩ V DEVICE CSD23203W CSD23203WT Device Information(1) QTY MEDIA PACKAGE 3000 7-Inch Reel 1.00-mm × 1.50-mm 250 7-Inch Reel Wafer Level Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(2) PD Power Dissipation TJ, Operating Junction, Tstg Storage Temperature VALUE –8 –6 –3 –54 0.75 UNIT V V A ...