P-Channel Power MOSFET
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CSD23203W
SLPS533A – DECEMBER ...
Description
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CSD23203W
SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016
CSD23203W –8-V P-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd Low RDS(on) Small Footprint Low Profile 0.62-mm Height Lead Free RoHS Compliant Halogen Free CSP 1-mm × 1.5-mm Wafer Level Package
2 Applications
Battery Management Load Switch Battery Protection
3 Description
This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
Top View
D
S
G
D
S
S
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On-Resistance
VGS(th) Voltage Threshold
TYPICAL VALUE
–8
4.9
0.6
VGS = –1.8 V VGS = –2.5 V VGS = –4.5 V
–0.8
35 22 16.2
UNIT V nC nC mΩ mΩ mΩ V
DEVICE CSD23203W CSD23203WT
Device Information(1)
QTY MEDIA
PACKAGE
3000 7-Inch Reel 1.00-mm × 1.50-mm 250 7-Inch Reel Wafer Level Package
SHIP
Tape and Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM Pulsed Drain Current(2)
PD Power Dissipation
TJ, Operating Junction, Tstg Storage Temperature
VALUE –8 –6 –3 –54 0.75
UNIT V V A ...
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