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Power MOSFET. CSD23280F3 Datasheet

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Power MOSFET. CSD23280F3 Datasheet






CSD23280F3 MOSFET. Datasheet pdf. Equivalent




CSD23280F3 MOSFET. Datasheet pdf. Equivalent





Part

CSD23280F3

Description

P-Channel Power MOSFET



Feature


Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD23280F3 SLPS601A – APRIL 2 016 – REVISED AUGUST 2017 CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ul tra-Low Qg and Qgd • High-Operating D rain Current • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Ultra-Low Pr ofile – 0.35-mm Max Height • Integrated.
Manufacture

Texas Instruments

Datasheet
Download CSD23280F3 Datasheet


Texas Instruments CSD23280F3

CSD23280F3; ESD Protection Diode – Rated > 4-kV H BM – Rated > 2-kV CDM • Lead and Ha logen Free • RoHS Compliant 2 Applica tions • Optimized for Load Switch App lications • Optimized for General Pur pose Switching Applications • Battery Applications • Handheld and Mobile A pplications 3 Description This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET i s designed and optimized to minimize th.


Texas Instruments CSD23280F3

e footprint in many handheld and mobile applications. This technology is capabl e of replacing standard small signal MO SFETs while providing a substantial red uction in footprint size. Product Summ ary TA = 25°C VDS Drain-to-Source V oltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th ) Threshold Voltage.


Texas Instruments CSD23280F3

TYPICAL VALUE –12 0.95 0.068 VGS = 1.5 V 230 VGS = –1.8 V 180 VGS = 2.5 V 129 VGS = –4.5 V 97 –0.65 U NIT V nC nC mΩ V DEVICE CSD23280F3 C SD23280F3T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Arr ay (LGA) SHIP Tape and Reel (1) For a ll available packages, see the orderabl e addendum at the end of the data.

Part

CSD23280F3

Description

P-Channel Power MOSFET



Feature


Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD23280F3 SLPS601A – APRIL 2 016 – REVISED AUGUST 2017 CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ul tra-Low Qg and Qgd • High-Operating D rain Current • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Ultra-Low Pr ofile – 0.35-mm Max Height • Integrated.
Manufacture

Texas Instruments

Datasheet
Download CSD23280F3 Datasheet




 CSD23280F3
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Folder
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Software
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CSD23280F3
SLPS601A – APRIL 2016 – REVISED AUGUST 2017
CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET
1 Features
1 Low On-Resistance
• Ultra-Low Qg and Qgd
• High-Operating Drain Current
• Ultra-Small Footprint
– 0.73 mm × 0.64 mm
• Ultra-Low Profile
– 0.35-mm Max Height
• Integrated ESD Protection Diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This –12-V, 97-mΩ, P-Channel FemtoFET™
MOSFET is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing a substantial
reduction in footprint size.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source
On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–12
0.95
0.068
VGS = –1.5 V 230
VGS = –1.8 V 180
VGS = –2.5 V 129
VGS = –4.5 V 97
–0.65
UNIT
V
nC
nC
m
V
DEVICE
CSD23280F3
CSD23280F3T
Device Information(1)
QTY
MEDIA
PACKAGE
3000
250
7-Inch Reel
Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM
Pulsed Drain Current(1)(2)
PD
Power Dissipation(1)
Human-Body Model (HBM)
V(ESD) Charged-Device Model (CDM)
VALUE
–12
–6
1.8
11.4
500
4000
2000
UNIT
V
V
A
A
mW
V
TJ,
Operating Junction,
Tstg Storage Temperature
–55 to 150 °C
(1) Typical RθJA = 255°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm)
thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(2) Pulse duration 100 μs, duty cycle 1%.
Typical Part Dimensions
0.35 mm
0.64 mm
0.73 mm
Top View
G
D
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD23280F3
CSD23280F3
SLPS601A – APRIL 2016 – REVISED AUGUST 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Mechanical Dimensions ............................................ 8
7.2 Recommended Minimum PCB Layout...................... 9
7.3 Recommended Stencil Pattern ................................. 9
4 Revision History
Changes from Original (April 2016) to Revision A
Page
• Added the Receiving Notification of Documentation Updates section in Device and Documentation Support ..................... 7
• Updated the Recommended Stencil Pattern .......................................................................................................................... 9
2
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Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: CSD23280F3




 CSD23280F3
www.ti.com
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
Drain-to-source voltage
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
RDS(on) Drain-to-source on-resistance
gfs
Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer Capacitance
RG
Series gate resistance
Qg
Gate charge total (4.5 V)
Qgd
Gate charge gate-to-drain
Qgs
Gate charge gate-to-source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turnon delay time
tr
Rise time
td(off)
Turnoff delay time
tf
Fall time
DIODE CHARACTERISTICS
VSD
Diode forward voltage
TEST CONDITIONS
VGS = 0 V, IDS = –250 μA
VGS = 0 V, VDS = –9.6 V
VDS = 0 V, VGS = –5 V
VDS = VGS, IDS = –250 μA
VGS = –1.5 V, IDS = –0.1 A
VGS = –1.8 V, IDS = –0.4 A
VGS = –2.5 V, IDS = –0.4 A
VGS = –4.5 V, IDS = –0.4 A
VDS = –1.2 V, IDS = –0.4 A
VGS = 0 V, VDS = –6 V,
ƒ = 1 MHz
VDS = –6 V, IDS = –0.4 A
VDS = –6 V, VGS = 0 V
VDS = –6 V, VGS = –4.5 V,
IDS = –0.4 A, RG = 0
ISD = –0.4 A, VGS = 0 V
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
RθJA
Junction-to-ambient thermal resistance(1)
Junction-to-ambient thermal resistance(2)
(1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz. (0.071-mm) thick Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
CSD23280F3
SLPS601A – APRIL 2016 – REVISED AUGUST 2017
MIN TYP MAX UNIT
–12
V
–50 nA
–25 nA
–0.40 –0.65 –0.95 V
230
399
180
250
m
129
165
97
116
3
S
180
73
8.5
9
0.95
0.068
0.30
0.15
1.07
8
4
21
8
234 pF
95 pF
11.1 pF
1.23 nC
nC
nC
nC
nC
ns
ns
ns
ns
–0.73 –1.0 V
TYPICAL VALUES
90
255
UNIT
°C/W
Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
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