CSD23381F4T

CSD23381F4 SLPS450E – OCTOBER 2013 – REVISED MAY 2015 CSD23381F4 12 V P-Channel FemtoFET™ MOSFET 1 Features Ultra-Low On-Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm Ultra-Low Profile – 0.35 mm Max Height Integrated ESD Protection Diode – Rated >4 kV HBM – Rated >2 kV CDM Lead and Halogen Free RoHS Compliant 2 Applications Optimized for Load Switch Applications Optimized for General Purpose Switching Applications Battery Applications Handheld and Mobile Applications 3 Description This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage –12 Qg Gate Charge Total (–4.5 V) 1140 UNIT V pC Product Summary (continued) TA = 25°C TYPICAL VALUE Qgd Gate Charge Gate-to-Drain 190 RDS(on) Drain-to-Source OnResistance VGS = –1.8 V 480 VGS = –2.5 V 250 VGS = –4.5 V 150 VGS(th) Threshold Voltage –0.95 UNIT pC mΩ mΩ mΩ V Device(1) CSD23381F4 CSD23381F4T Ordering Information Qty Media Package 3000 250 7-Inch Reel Femto(0402) 1.0 mm x 0.6 mm Land Grid Array (LGA) Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. . Absolute Ma...