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Power MOSFET. CSD23382F4T Datasheet

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Power MOSFET. CSD23382F4T Datasheet






CSD23382F4T MOSFET. Datasheet pdf. Equivalent




CSD23382F4T MOSFET. Datasheet pdf. Equivalent





Part

CSD23382F4T

Description

P-Channel Power MOSFET



Feature


Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23382F4 SLPS453C – MAY 2014 – REVISED OCTOBER 2014 CSD23382F 4 12 V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ult ra-Low Qg and Qgd • Ultra-Small Footp rint (0402 Case Size) – 1.0 mm × 0.6 mm • Low Profile – 0.35 mm Max Hei ght • Integrated ESD Protection Diode.
Manufacture

Texas Instruments

Datasheet
Download CSD23382F4T Datasheet


Texas Instruments CSD23382F4T

CSD23382F4T; – Rated >2 kV HBM – Rated >2 kV CDM • Pb Terminal Plating • Halogen Fr ee • RoHS Compliant 2 Applications Optimized for Load Switch Application s • Optimized for General Purpose Swi tching Applications • Battery Applica tions • Handheld and Mobile Applicati ons 3 Description This 66 mΩ, 12 V P-c hannel FemtoFET™ MOSFET is designed a nd optimized to minimize the footprint .


Texas Instruments CSD23382F4T

in many handheld and mobile applications . This technology is capable of replaci ng standard small signal MOSFETs while providing at least a 60% reduction in f ootprint size. . Typical Part Dimension s 0.35 mm Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Cha rge Gate-to-Drain RDS(on) Drain-to-Sou rce On-Resistance VG.


Texas Instruments CSD23382F4T

S(th) Threshold Voltage TYPICAL VALUE 12 1.04 0.15 VGS = –1.8 V 149 VGS = –2.5 V 90 VGS = –4.5 V 66 –0.8 UNIT V nC nC mΩ V Device CSD23382F4 CSD23382F4T Ordering Information(1) Q ty Media Package 3000 7-Inch Reel F emto (0402) 1.0 mm × 0.6 mm 250 7-Inc h Reel Land Grid Array (LGA) Ship Tape and Reel (1) For all available packag es, see the orderable addendum .

Part

CSD23382F4T

Description

P-Channel Power MOSFET



Feature


Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23382F4 SLPS453C – MAY 2014 – REVISED OCTOBER 2014 CSD23382F 4 12 V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ult ra-Low Qg and Qgd • Ultra-Small Footp rint (0402 Case Size) – 1.0 mm × 0.6 mm • Low Profile – 0.35 mm Max Hei ght • Integrated ESD Protection Diode.
Manufacture

Texas Instruments

Datasheet
Download CSD23382F4T Datasheet




 CSD23382F4T
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD23382F4
SLPS453C – MAY 2014 – REVISED OCTOBER 2014
CSD23382F4 12 V P-Channel FemtoFET™ MOSFET
1 Features
1 Low On-Resistance
• Ultra-Low Qg and Qgd
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
• Low Profile
– 0.35 mm Max Height
• Integrated ESD Protection Diode
– Rated >2 kV HBM
– Rated >2 kV CDM
• Pb Terminal Plating
• Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 mm
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–12
1.04
0.15
VGS = –1.8 V 149
VGS = –2.5 V 90
VGS = –4.5 V 66
–0.8
UNIT
V
nC
nC
m
V
Device
CSD23382F4
CSD23382F4T
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
Femto (0402)
1.0 mm × 0.6 mm
250 7-Inch Reel Land Grid Array (LGA)
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM
Pulsed Drain Current, TA = 25°C(2)
Continuous Gate Clamp Current
IG
Pulsed Gate Clamp Current(2)
PD
Power Dissipation(1)
Human Body Model (HBM)
V(ESD) Charged Device Model (CDM)
VALUE
–12
±8
–3.5
–22
–35
–350
500
2
2
UNIT
V
V
A
A
mA
mW
kV
kV
TJ,
Operating Junction and
Tstg Storage Temperature Range
–55 to 150 °C
(1) Typical RθJA = 85°C/W on 1 inch2 (6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration 100 μs, duty cycle 1%
Top View
0.60 mm
.
.
1.00 mm
D
GS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD23382F4T
CSD23382F4
SLPS453C – MAY 2014 – REVISED OCTOBER 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Mechanical Dimensions ............................................ 8
7.2 Recommended Minimum PCB Layout...................... 9
7.3 Recommended Stencil Pattern ................................. 9
7.4 CSD23382F4 Embossed Carrier Tape
Dimensions .............................................................. 10
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (July 2014) to Revision C
Page
• Corrected timing VDS to read –6 V ......................................................................................................................................... 3
Changes from Revision A (June 2014) to Revision B
Page
• Corrected capacitance units to read pF in Figure 5 ............................................................................................................... 5
Changes from Original (May 2014) to Revision A
Page
• Changed device status to production ..................................................................................................................................... 1
2
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Copyright © 2014, Texas Instruments Incorporated




 CSD23382F4T
www.ti.com
5 Specifications
CSD23382F4
SLPS453C – MAY 2014 – REVISED OCTOBER 2014
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
Drain-to-Source Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
RDS(on) Drain-to-Source On-Resistance
gƒs
Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Series Gate Resistance
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
Qgs
Gate Charge Gate-to-Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tƒ
Fall Time
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
TEST CONDITIONS
VGS = 0 V, IDS = –250 μA
VGS = 0 V, VDS = –9.6 V
VDS = 0 V, VGS = –8 V
VDS = VGS, IDS = 250 μA
VGS = –1.8 V, IDS = –0.1 A
VGS = –2.5 V, IDS = –0.5 A
VGS = –4.5 V, IDS = –0.5 A
VDS = –10 V, IDS = –0.5 A
VGS = 0 V, VDS = –6 V,
ƒ = 1 MHz
VDS = –6 V, IDS = –0.5 A
VDS = –6 V, VGS = 0 V
VDS = –6 V, VGS = –4.5 V,
IDS = –0.5 A,RG = 2
ISD = –0.5 A, VGS = 0 V
VDS= –6 V, IF = –0.5 A, di/dt = 200 A/μs
MIN TYP MAX UNIT
–12
V
–1 μA
–10 μA
–0.5 –0.8 –1.1 V
149
199 m
90
105 m
66
76 m
3.4
S
180
235 pF
118
154 pF
12.8 16.6 pF
350
1.04 1.35 nC
0.15
nC
0.50
nC
0.18
nC
1.08
nC
28
ns
25
ns
66
ns
41
ns
–0.75
1.8
8.4
–1 V
nC
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJA
Junction-to-Ambient Thermal Resistance(1)
Junction-to-Ambient Thermal Resistance(2)
(1) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
TYP
UNIT
85
°C/W
245
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD23382F4
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