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Power MOSFET. CSD25211W1015 Datasheet

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Power MOSFET. CSD25211W1015 Datasheet






CSD25211W1015 MOSFET. Datasheet pdf. Equivalent




CSD25211W1015 MOSFET. Datasheet pdf. Equivalent





Part

CSD25211W1015

Description

P-Channel Power MOSFET



Feature


CSD25211W1015 SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014 CSD25211W1015 , P-Channel NexFET™ Power MOSFET 1 F eatures •1 Ultra-Low On Resistance Ultra-Low Qg and Qgd • Small Footpr int 1.0 mm × 1.5 mm • Low Profile 0. 62 mm Height • Pb Free • Gate-Sourc e Voltage Clamp • Gate ESD Protection – 3 kV • RoHS Compliant • Haloge n Free 2 Applications • Battery Management • .
Manufacture

Texas Instruments

Datasheet
Download CSD25211W1015 Datasheet


Texas Instruments CSD25211W1015

CSD25211W1015; Load Switch • Battery Protection 3 Des cription The device is designed to deli ver the lowest on resistance and gate c harge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Top View Prod uct Summary TA = 25°C unless otherwis e stated VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5V) Qgd Gate Charge Gate to Dra.


Texas Instruments CSD25211W1015

in RDS(on) Drain-to-Source On Resistanc e VGS(th) Voltage Threshold TYPICAL V ALUE –20 3.4 0.2 VGS = –2.5 V 36 VG S = –4.5 V 27 –0.8 UNIT V nC nC m mΩ V Device CSD25211W1015 Orderi ng Information Package Media Qty 1 × 1.5 Wafer Level Package 7-inch reel 3000 Ship Tape and Reel Absolute Max imum Ratings TA = 25°C unless otherwi se stated VDS Drain-to-Source V.


Texas Instruments CSD25211W1015

oltage VGS Gate-to-Source Voltage ID Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C( 2) IG Continuous Drain Current, TA = 25°C Pulsed Drain Current PD Power D issipation(1) TSTG Storage Temperature Range TJ Operating Junction Temperat ure Range VALUE -20 -6 -3.2 -9.5 -0.5 -7 1 UNIT V V A A A A W –55 to 150 °C (1) Typical RθJA = .

Part

CSD25211W1015

Description

P-Channel Power MOSFET



Feature


CSD25211W1015 SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014 CSD25211W1015 , P-Channel NexFET™ Power MOSFET 1 F eatures •1 Ultra-Low On Resistance Ultra-Low Qg and Qgd • Small Footpr int 1.0 mm × 1.5 mm • Low Profile 0. 62 mm Height • Pb Free • Gate-Sourc e Voltage Clamp • Gate ESD Protection – 3 kV • RoHS Compliant • Haloge n Free 2 Applications • Battery Management • .
Manufacture

Texas Instruments

Datasheet
Download CSD25211W1015 Datasheet




 CSD25211W1015
CSD25211W1015
SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014
CSD25211W1015, P-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low On Resistance
• Ultra-Low Qg and Qgd
• Small Footprint 1.0 mm × 1.5 mm
• Low Profile 0.62 mm Height
• Pb Free
• Gate-Source Voltage Clamp
• Gate ESD Protection – 3 kV
• RoHS Compliant
• Halogen Free
2 Applications
• Battery Management
• Load Switch
• Battery Protection
3 Description
The device is designed to deliver the lowest on
resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra-low profile.
Top View
Product Summary
TA = 25°C unless otherwise stated
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Voltage Threshold
TYPICAL VALUE
–20
3.4
0.2
VGS = –2.5 V 36
VGS = –4.5 V 27
–0.8
UNIT
V
nC
nC
m
m
V
Device
CSD25211W1015
Ordering Information
Package
Media
Qty
1 × 1.5 Wafer
Level Package
7-inch reel 3000
Ship
Tape and
Reel
Absolute Maximum Ratings
TA = 25°C unless otherwise stated
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current, TA = 25°C(1)
IDM Pulsed Drain Current, TA = 25°C(2)
IG
Continuous Drain Current, TA = 25°C
Pulsed Drain Current
PD
Power Dissipation(1)
TSTG Storage Temperature Range
TJ
Operating Junction Temperature Range
VALUE
-20
-6
-3.2
-9.5
-0.5
-7
1
UNIT
V
V
A
A
A
A
W
–55 to 150 °C
(1) Typical RθJA = 119°C/W on 1 inch2 of 2 oz. Cu on 0.06-inch
thick FR4 PCB.
(2) Pulse width 10 µs, duty cycle 2%
100
90
80
70
60
50
40
30
20
10
0
0
RDS(ON) vs VGS
ID = 1.5A
TC = 25°C
TC = 125ºC
1
2
3
4
5
6
VGS - Gate-to- Source Voltage - V
G001
6
5
ID = 1.5A
VDD = 10V
4
Gate Charge
3
2
1
0
0
2
Qg - Gate Charge - nC (nC)
4
G001
3.1 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD25211W1015
CSD25211W1015
SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014
3.2 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
BVDSS
BVGSS
IDSS
IGSS
VGS(th)
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
RDS(on) Drain-to-Source On Resistance
gfs
Transconductance
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
Diode Characteristics
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
TEST CONDITIONS
VGS = 0 V, ID = –250 μA
VDS = 0 V, IG = –250 μA
VGS = 0 V, VDS = –16 V
VDS = 0 V, VGS = –6 V
VDS = VGS, ID = –250 μA
VGS = –2.5 V, ID = –1.5 A
VGS = –4.5 V, ID = –1.5 A
VDS = –10 V, ID = –1.5 A
VGS = 0 V, VDS = –10 V, ƒ = 1 MHz
VDS = –10 V, ID = –1.5 A
VDS = –10 V, VGS = 0 V
VDS = –10 V, VGS = –4.5 V, ID = –1.5 A
RG = 4
IS = –1.5 A, VGS = 0 V
Vdd= –10 V, IF = –1.5 A, di/dt = 200 A/μs
3.3 Thermal Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
R θJA
Thermal Resistance Junction to Ambient (Minimum Cu area)
Thermal Resistance Junction to Ambient (1 in2 Cu area)
www.ti.com
MIN TYP MAX UNIT
–20
V
–6.1
–7.2 V
–1 μA
–100 nA
–0.5 –0.8 –1.1 V
36
44 m
27
33 m
12
S
475 570 pF
234 281 pF
10.5 13.1 pF
3.4 4.1 nC
0.2
nC
1.1
nC
0.6
nC
3.8
nC
13.6
ns
8.8
ns
36.9
ns
14.2
ns
–0.8
–1 V
6.9
nC
11.6
ns
MIN TYP MAX UNIT
230 °C/W
149 °C/W
P-Chan 1.0x1.5 CSP TTA MAX Rev1
P-Chan 1.0x1.5 CSP TTA MIN Rev1
Max RθJA = 149°C/W
when mounted on 1
inch2 of 2 oz. Cu.
Max RθJA = 230°C/W
when mounted on
minimum pad area of
2 oz. Cu.
M0155-01
M0156-01
2
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Copyright © 2012–2014, Texas Instruments Incorporated




 CSD25211W1015
www.ti.com
4 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
CSD25211W1015
SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014
Figure 1. Transient Thermal Impedance
18
20
10 VDS = 5V
10
VGS =5.0V
VGS =4.5V
VGS =4.0V
VGS =2.5V
VGS =2.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VDS - Drain-to-Source Voltage - V
G001
Figure 2. Saturation Characteristics
1
0.1
0.01
0.001
0
TC = 125°C
TC = 25°C
TC = −55°C
0.5
1
1.5
2
VGS - Gate-to-Source Voltage - V
2.5
G001
Figure 3. Transfer Characteristics
Copyright © 2012–2014, Texas Instruments Incorporated
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