CSD25213W10

CSD25213W10 www.ti.com P-Channel NexFET™ Power MOSFET Check for Samples: CSD25213W10 SLPS443 – JUNE 2013 FEATURES 1 Ultra Low Qg and Qgd Small Footprint 1mm × 1mm Low Profile 0.62mm Height Pb Free Gate-Source Voltage Clamp Gate ESD Protection RoHS Compliant Halogen Free APPLICATIONS Battery Management Load Switch Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View GS RC RG DS PRODUCT SUMMARY VDS Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 2.2 nC Qgd Gate Charge Gate to Drain 0.14 nC RDS(on) Drain to Source On Resistance VGS = –2.5V 54 mΩ VGS = –4.5V 39 mΩ VGS(th) Threshold Voltage –0.85 V ORDERING INFORMATION Device Package Media Qty CSD25213W10 1 × 1 Wafer Level Package 7-inch reel 3000 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) IG Continuous Gate Clamp Current(3) PD Power Dissipation(1) TJ, TSTG Operating Junction and Storage Temperature Range VALUE –20 –6.0 -1.6 -16 -5 1 –55 to 150 UNIT V V A A mA W °C (1) RθJA = 75°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% (3) Limited by gate resistance. RDS(on) - On-Stat...