CSD25301W1015

CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 P-Channel NexFET™ Power MOSFET Check for Samples: CSD25301W1015 FEATURES 1 Ultra Low Qg and Qgd Small Footprint Low Profile 0.62mm Height Pb Free RoHS Compliant Halogen Free CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS Battery Management Load Switch Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View D D S S PRODUCT SUMMARY VDS Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 1.9 nC Qgd Gate Charge Gate to Drain 0.4 nC VGS = –1.5V 175 mΩ RDS(on) Drain to Source On Resistance VGS = –2.5V 80 mΩ VGS = –4.5V 62 mΩ VGS(th) Voltage Threshold –0.75 V ORDERING INFORMATION Device Package Media Qty CSD25301W1015 1 × 1.5 Wafer Level Package 7-inch reel 3000 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range VALUE –20 ±8 –2.2 –8.8 1.5 UNIT V V A A W –55 to 150 °C (1) RqJA = 85°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300ms, duty cycle ≤2% RDS(on) − On-State Resistance − mΩ −VG − Gate Voltage − V 300 250 200 ...