P-Channel Power MOSFET
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CSD25402Q3A
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Description
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CSD25402Q3A
SLPS454B – DECEMBER 2013 – REVISED JANUARY 2016
CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS(on) Pb and Halogen Free RoHS Compliant SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
DC-DC Converters Battery Management Load Switch Battery Protection
3 Description
This –20-V, 7.7-mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
Top View
D1 D2
8S 7S
D3
4 G
6S
S
5
S
Product Summary
TA = 25°C
VDS
Drain-to-source voltage
Qg
Gate charge total (–4.5 V)
Qgd
Gate charge gate to drain
RDS(on) Drain-to-source on resistance
Vth
Threshold voltage
TYPICAL VALUE
–20
7.5
1.1
VGS = –1.8 V VGS = –2.5 V VGS = –4.5 V
–0.9
74 13.3 7.7
UNIT V nC nC mΩ mΩ mΩ V
Ordering Information(1)
DEVICE
QTY MEDIA
PACKAGE
CSD25402Q3A 2500 13-Inch Reel SON 3.3 mm × 3.3 CSD25402Q3AT 250 7-Inch Reel mm Plastic Package
SHIP
Tape and Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-source voltage
VGS Gate-to-source voltage
Continuous drain current, TC = 25°C
ID
Continuous drain current (package limit)
Continuous drain ...
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