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Power MOSFET. CSD25402Q3AT Datasheet

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Power MOSFET. CSD25402Q3AT Datasheet






CSD25402Q3AT MOSFET. Datasheet pdf. Equivalent




CSD25402Q3AT MOSFET. Datasheet pdf. Equivalent





Part

CSD25402Q3AT

Description

P-Channel Power MOSFET



Feature


Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD25402Q3 A SLPS454B – DECEMBER 2013 – REVISE D JANUARY 2016 CSD25402Q3A –20 V P-Ch annel NexFET™ Power MOSFET 1 Feature s •1 Ultra-Low Qg and Qgd • Low The rmal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package .
Manufacture

Texas Instruments

Datasheet
Download CSD25402Q3AT Datasheet


Texas Instruments CSD25402Q3AT

CSD25402Q3AT; 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™ power MOSFET is designed to minimize losses in powe r conversion load management applicatio ns with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal perfor mance for the size of the device. Top View D1 D2 8S 7S D3 4 G 6S .


Texas Instruments CSD25402Q3AT

S 5 S Product Summary TA = 25°C VD S Drain-to-source voltage Qg Gate ch arge total (–4.5 V) Qgd Gate charge gate to drain RDS(on) Drain-to-source on resistance Vth Threshold voltage TYPICAL VALUE –20 7.5 1.1 VGS = –1.8 V VGS = –2.5 V VGS = –4.5 V –0.9 74 13.3 7.7 UNIT V nC nC mΩ mΩ mΩ V Ordering Information(1) D EVICE QTY MEDIA PACKAGE CSD25402Q3.


Texas Instruments CSD25402Q3AT

A 2500 13-Inch Reel SON 3.3 mm × 3.3 CS D25402Q3AT 250 7-Inch Reel mm Plastic P ackage SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-source voltage VGS Gate-t o-source voltage Continuous drain curr ent, TC = 25°C ID Continuous drain c urrent (package limit.

Part

CSD25402Q3AT

Description

P-Channel Power MOSFET



Feature


Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD25402Q3 A SLPS454B – DECEMBER 2013 – REVISE D JANUARY 2016 CSD25402Q3A –20 V P-Ch annel NexFET™ Power MOSFET 1 Feature s •1 Ultra-Low Qg and Qgd • Low The rmal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package .
Manufacture

Texas Instruments

Datasheet
Download CSD25402Q3AT Datasheet




 CSD25402Q3AT
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
Reference
Design
CSD25402Q3A
SLPS454B – DECEMBER 2013 – REVISED JANUARY 2016
CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Low RDS(on)
• Pb and Halogen Free
• RoHS Compliant
• SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
• DC-DC Converters
• Battery Management
• Load Switch
• Battery Protection
3 Description
This –20-V, 7.7-mΩ NexFET™ power MOSFET is
designed to minimize losses in power conversion load
management applications with a SON 3.3 mm × 3.3
mm package that offers an excellent thermal
performance for the size of the device.
Top View
D1
D2
8S
7S
D3
4
G
6S
S
5
S
Product Summary
TA = 25°C
VDS
Drain-to-source voltage
Qg
Gate charge total (–4.5 V)
Qgd
Gate charge gate to drain
RDS(on) Drain-to-source on resistance
Vth
Threshold voltage
TYPICAL VALUE
–20
7.5
1.1
VGS = –1.8 V
VGS = –2.5 V
VGS = –4.5 V
–0.9
74
13.3
7.7
UNIT
V
nC
nC
m
m
m
V
Ordering Information(1)
DEVICE
QTY MEDIA
PACKAGE
CSD25402Q3A 2500 13-Inch Reel SON 3.3 mm × 3.3
CSD25402Q3AT 250 7-Inch Reel mm Plastic Package
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-source voltage
VGS Gate-to-source voltage
Continuous drain current, TC = 25°C
ID
Continuous drain current (package limit)
Continuous drain current(1)
IDM Pulsed drain current(2)
Power dissipation(1)
PD
Power dissipation, TC = 25°C
TJ
Operating junction temperature
Tstg Storage temperature
VALUE
–20
+12 or –12
–76
–35
–15
–148
2.8
69
–55 to 150
–55 to 150
UNIT
V
V
A
A
A
A
W
°C
°C
(1) Typical RθJA = 45°C/W on 1 inch2 Cu (2 oz.) on 0.060 inch
thick FR4 PCB.
(2) Max RθJC = 2.3°C/W, pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
24
TC = 25°C, I D = -10 A
21
TC = 125°C, I D = -10 A
18
15
12
9
6
3
0
0
2
4
6
8
10
12
-VGS - Gate-To-Source Voltage (V)
D007
8
ID = -10 A
7 VDS = -10 V
6
Gate Charge
5
4
3
2
1
0
0
2
4
6
8
10
12
14
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD25402Q3AT
CSD25402Q3A
SLPS454B – DECEMBER 2013 – REVISED JANUARY 2016
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Community Resources.............................................. 7
6.2 Trademarks ............................................................... 7
6.3 Electrostatic Discharge Caution ................................ 7
6.4 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q3A Package Dimensions ........................................ 8
7.2 Q3A Recommended PCB Pattern ............................ 9
7.3 Q3A Recommended Stencil Pattern ......................... 9
7.4 Q3A Tape and Reel Information ............................. 10
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (July 2015) to Revision B
Page
• Updated Package Dimensions drawing.................................................................................................................................. 8
• Updated PCB drawing. .......................................................................................................................................................... 9
• Updated Stencil Pattern drawing. .......................................................................................................................................... 9
Changes from Original (December 2013) to Revision A
Page
• Added part number to title. .................................................................................................................................................... 1
• Added 7-inch reel to Ordering Information table .................................................................................................................... 1
• Lowered typical RθJA from 55 to 45°C/W in Absolute Maximum Ratings Table footnote. ..................................................... 1
• Increased max pulsed current to –148 A. ............................................................................................................................. 1
• Added line for max power dissipation with the case temperature held to 25°C in Absolute Maximum Ratings Table. ........ 1
• Updated pulsed current conditions. ....................................................................................................................................... 1
• Updated Figure 1 to a normalized RθJC curve. ...................................................................................................................... 4
• Updated SOA in Figure 10 ..................................................................................................................................................... 6
2
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Copyright © 2013–2016, Texas Instruments Incorporated
Product Folder Links: CSD25402Q3A




 CSD25402Q3AT
www.ti.com
5 Specifications
CSD25402Q3A
SLPS454B – DECEMBER 2013 – REVISED JANUARY 2016
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
Drain-to-source voltage
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
RDS(on) Drain-to-source on resistance
gfs
Transconductance
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
RG
Series gate resistance
Qg
Gate charge total (–4.5 V)
Qgd
Gate charge gate to drain
Qgs
Gate charge gate to source
Qg(th)
Gate charge at Vth
QOSS
Output charge
td(on)
Turn on delay time
tr
Rise time
td(off)
Turn off delay time
tf
Fall time
DIODE CHARACTERISTICS
VSD
Diode forward voltage
Qrr
Reverse recovery charge
trr
Reverse recovery time
TEST CONDITIONS
VGS = 0 V, ID = –250 μA
VGS = 0 V, VDS = –16 V
VDS = 0 V, VGS = ±12 V
VDS = VGS, ID = –250 μA
VGS = –1.8 V, ID = –1 A
VGS = –2.5 V, ID = –10 A
VGS = –4.5 V, ID = –10 A
VDS = –10 V, ID = –10 A
VGS = 0 V, VDS = –10 V,
ƒ = 1 MHz
VDS = –10 V, ID = –10 A
VDS = –10 V, VGS = 0 V
VDS = –10 V, VGS = –4.5 V,
ID = –10 A , RG = 5
IS = –10 A, VGS = 0 V
VDS = –8.5 V, IF = –10 A,
di/dt = 200 A/μs
MIN TYP MAX UNIT
–20
V
–1 μA
–100 nA
–0.65 –0.90 –1.15 V
74 300 m
13.3 15.9 m
7.7 8.9 m
59
S
1380 1790 pF
763 992 pF
39
51 pF
3.7 7.4
7.5 9.7 nC
1.1
nC
2.4
nC
1.0
nC
7.6
nC
10
ns
7
ns
25
ns
12
ns
–0.8
–1
V
10.3
nC
21
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJC
RθJA
Junction-to-case thermal resistance(1)
Junction-to-ambient thermal resistance(1)(2)
MIN TYP MAX UNIT
2.3 °C/W
55 °C/W
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm ×
3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
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Product Folder Links: CSD25402Q3A
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