CSD25480F3

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25480F3 SLPS578A – APRIL 2016 – REVISED AUGUST 2017 CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET 1 Features 1 Low On-Resistance Ultra-Low Qg and Qgd Ultra-Small Footprint – 0.73 mm × 0.64 mm Low Profile – 0.35-mm Max Height Integrated ESD Protection Diode Lead and Halogen Free RoHS Compliant 2 Applications Optimized for Load Switch Applications Optimized for General Purpose Switching Applications Battery Applications Handheld and Mobile Applications 3 Description This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 0.7 0.10 VGS = –1.8 V 420 VGS = –2.5 V 203 VGS = –4.5 V 132 VGS = –8.0 V 110 –0.95 UNIT V nC nC mΩ V DEVICE CSD25480F3 CSD25480F3T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C (unless otherwise stated) VDS Drain-to-Source Vo...