CSD25481F4

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25481F4 SLPS420E – SEPTEMBER 2013 – REVISED DECEMBER 2017 CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features 1 Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint (0402 Case Size) – 1 mm × 0.6 mm Ultra-Low Profile – 0.35 mm Max Height Integrated ESD Protection Diode – Rated >4 kV HBM – Rated >2 kV CDM Lead and Halogen Free RoHS Compliant 2 Applications Optimized for Load Switch Applications Optimized for General Purpose Switching Applications Battery Applications Handheld and Mobile Applications 3 Description This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . Typical Part Dimensions 0.35 mm Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 913 153 VGS = –1.8 V 395 VGS = –2.5 V 145 VGS = –4.5 V 90 –0.95 UNIT V pC pC mΩ mΩ mΩ V Device CSD25481F4 CSD25481F4T Ordering Information(1) Qty Media Package 3000 250 7-Inch Reel 7-Inch Reel Femto(0402) 1.0 mm × 0.6 mm Land Grid Array (LGA) Ship Tape and Reel (1) For all available packages, see the or...