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High-speed diodes. PH4148 Datasheet

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High-speed diodes. PH4148 Datasheet






PH4148 diodes. Datasheet pdf. Equivalent




PH4148 diodes. Datasheet pdf. Equivalent





Part

PH4148

Description

High-speed diodes



Feature


DISCRETE SEMICONDUCTORS DATA SHEET M3D1 76 1N4148; 1N4448 High-speed diodes Pr oduct data sheet Supersedes data of 200 2 Jan 23 2004 Aug 10 NXP Semiconducto rs High-speed diodes Product data shee t 1N4148; 1N4448 FEATURES • Hermetic ally sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Contin uous reverse voltage: max..
Manufacture

NXP

Datasheet
Download PH4148 Datasheet


NXP PH4148

PH4148; 100 V • Repetitive peak reverse volta ge: max. 100 V • Repetitive peak forw ard current: max. 450 mA. APPLICATIONS • High-speed switching. handbook, ha lfpagke a MAM246 The diodes are type branded. Fig.1 Simplified outline (SOD2 7; DO-35) and symbol. DESCRIPTION The 1N4148 and 1N4448 are high-speed switch ing diodes fabricated in planar technol ogy, and encapsulated in.


NXP PH4148

hermetically sealed leaded glass SOD27 (DO-35) packages. MARKING TYPE NUMBER 1N4148 1N4448 MARKING CODE 1N4148PH or 4148PH 1N4448 ORDERING INFORMATION TY PE NUMBER 1N4148 1N4448 NAME − PACK AGE DESCRIPTION hermetically sealed gla ss package; axial leaded; 2 leads VERS ION SOD27 2004 Aug 10 2 NXP Semicond uctors High-speed diodes Product data sheet 1N4148; 1N4448.


NXP PH4148

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60 134). SYMBOL PARAMETER VRRM VR IF IF RM IFSM repetitive peak reverse voltag e continuous reverse voltage continuous forward current repetitive peak forwar d current non-repetitive peak forward c urrent Ptot total power dissipation Tstg storage temperature Tj junction temperature COND.

Part

PH4148

Description

High-speed diodes



Feature


DISCRETE SEMICONDUCTORS DATA SHEET M3D1 76 1N4148; 1N4448 High-speed diodes Pr oduct data sheet Supersedes data of 200 2 Jan 23 2004 Aug 10 NXP Semiconducto rs High-speed diodes Product data shee t 1N4148; 1N4448 FEATURES • Hermetic ally sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Contin uous reverse voltage: max..
Manufacture

NXP

Datasheet
Download PH4148 Datasheet




 PH4148
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N4148; 1N4448
High-speed diodes
Product data sheet
Supersedes data of 2002 Jan 23
2004 Aug 10




 PH4148
NXP Semiconductors
High-speed diodes
Product data sheet
1N4148; 1N4448
FEATURES
Hermetically sealed leaded glass SOD27 (DO-35)
package
High switching speed: max. 4 ns
General application
Continuous reverse voltage: max. 100 V
Repetitive peak reverse voltage: max. 100 V
Repetitive peak forward current: max. 450 mA.
APPLICATIONS
High-speed switching.
handbook, halfpagke
a
MAM246
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
DESCRIPTION
The 1N4148 and 1N4448 are high-speed switching diodes
fabricated in planar technology, and encapsulated in
hermetically sealed leaded glass SOD27 (DO-35)
packages.
MARKING
TYPE NUMBER
1N4148
1N4448
MARKING CODE
1N4148PH or 4148PH
1N4448
ORDERING INFORMATION
TYPE NUMBER
1N4148
1N4448
NAME
PACKAGE
DESCRIPTION
hermetically sealed glass package; axial leaded; 2 leads
VERSION
SOD27
2004 Aug 10
2




 PH4148
NXP Semiconductors
High-speed diodes
Product data sheet
1N4148; 1N4448
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
MIN.
MAX.
100
100
200
450
UNIT
V
V
mA
mA
4
A
1
A
0.5
A
500
mW
65
+200 °C
200
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
1N4148
1N4448
IR
reverse current
IR
reverse current; 1N4448
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
MIN.
see Fig.3
IF = 10 mA
IF = 5 mA
IF = 100 mA
VR = 20 V; see Fig.5
VR = 20 V; Tj = 150 °C; see Fig.5
VR = 20 V; Tj = 100 °C; see Fig.5
f = 1 MHz; VR = 0 V; see Fig.6
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
0.62
MAX. UNIT
1
V
0.72
V
1
V
25
nA
50
µA
3
µA
4
pF
4
ns
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-tp)
Rth(j-a)
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed-circuit board without metallization pad.
VALUE UNIT
240
K/W
350
K/W
2004 Aug 10
3






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