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Power MOSFET. 025N03MS Datasheet

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Power MOSFET. 025N03MS Datasheet






025N03MS MOSFET. Datasheet pdf. Equivalent




025N03MS MOSFET. Datasheet pdf. Equivalent





Part

025N03MS

Description

Power MOSFET

Manufacture

Infineon

Datasheet
Download 025N03MS Datasheet


Infineon 025N03MS

025N03MS; BSC025N03MSG MOSFET OptiMOSª3M-Serie sPower-MOSFET,30V Features •Optim izedfor5Vdriverapplication(Noteboo k,VGA,POL) •LowFOMSWforHighFre quencySMPS •100%avalanchetested N-channel •Verylowon-resistance RDS(on)@VGS=4.5V •Excellentgate chargexRDS(on)product(FOM) •Qua lifiedaccordingtoJEDEC1)fortarget applications •Superiorthermal.


Infineon 025N03MS

resistance •Pb-freeplating;RoHScom pliant •Halogen-freeaccordingtoIE C61249-2-21 Table1KeyPerformanc eParameters Parameter Value Unit V DS 30 V RDS(on),max,VGS=10V 2.5 m Ω RDS(on),max,VGS=4.5V 3 mΩ ID 147 A SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5 D Type/OrderingCode BSC025N03MS G Package PG-TDSON-8 Markin.


Infineon 025N03MS

g 025N03MS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2 .0,2020-07-21 OptiMOSª3M-SeriesPo wer-MOSFET,30V BSC025N03MSG Tableof Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . .



Part

025N03MS

Description

Power MOSFET

Manufacture

Infineon

Datasheet
Download 025N03MS Datasheet




 025N03MS
BSC025N03MSG
MOSFET
OptiMOSª3M-SeriesPower-MOSFET,30V
Features
•Optimizedfor5Vdriverapplication(Notebook,VGA,POL)
•LowFOMSWforHighFrequencySMPS
•100%avalanchetested
•N-channel
•Verylowon-resistanceRDS(on)@VGS=4.5V
•ExcellentgatechargexRDS(on)product(FOM)
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Superiorthermalresistance
•Pb-freeplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max,VGS=10V 2.5
m
RDS(on),max,VGS=4.5V 3
m
ID
147
A
SuperSO8
8 7 65
56 78
1
23
4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
BSC025N03MS G
Package
PG-TDSON-8
Marking
025N03MS
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2020-07-21





 025N03MS
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.2.0,2020-07-21





 025N03MS
OptiMOSª3M-SeriesPower-MOSFET,30V
BSC025N03MSG
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
-
147
-
93
-
134
-
85
-
23
-
588
-
50
-
135
-
20
-
83
-
2.5
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=4.5V,TA=25°C,RthJA=50K/W2)
A TC=25°C
A TC=25°C
mJ ID=50A,RGS=25
V-
W
TC=25°C
TA=25°C,RthJA=50K/W2)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm2 cooling area2)
RthJC
RthJC
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
-
-
1.5 K/W -
-
-
18 K/W -
-
-
50 K/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.0,2020-07-21



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