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Power MOSFET. BSC025N03LS Datasheet

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Power MOSFET. BSC025N03LS Datasheet







BSC025N03LS MOSFET. Datasheet pdf. Equivalent




BSC025N03LS MOSFET. Datasheet pdf. Equivalent





Part

BSC025N03LS

Description

Power MOSFET

Manufacture

Infineon

Datasheet
Download BSC025N03LS Datasheet


Infineon BSC025N03LS

BSC025N03LS; BSC025N03LSG MOSFET OptiMOSª3Power-M OSFET,30V Features •Fastswitching MOSFETforSMPS •Optimizedtechnolo gyforDC/DCconverters •Qualifieda ccordingtoJEDEC1)fortargetapplica tions •N-channel;Logiclevel •Ex cellentgatechargexRDS(on)product( FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Av alancherated •Pb-freeplating;Ro.


Infineon BSC025N03LS

HScompliant •Halogen-freeaccording toIEC61249-2-21 Table1KeyPerfo rmanceParameters Parameter Value Un it VDS 30 V RDS(on),max 2.5 mΩ ID 147 A SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC025N03LS G Package PG-TDSON-8 Marking 025N03LS RelatedLinks - 1) J-STD20 and JESD2 2 Final Data Sheet 1.


Infineon BSC025N03LS

Rev.2.0,2020-08-10 OptiMOSª3Powe r-MOSFET,30V BSC025N03LSG TableofC ontents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .



Part

BSC025N03LS

Description

Power MOSFET

Manufacture

Infineon

Datasheet
Download BSC025N03LS Datasheet




 BSC025N03LS
BSC025N03LSG
MOSFET
OptiMOSª3Power-MOSFET,30V
Features
•FastswitchingMOSFETforSMPS
•OptimizedtechnologyforDC/DCconverters
•QualifiedaccordingtoJEDEC1)fortargetapplications
•N-channel;Logiclevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Superiorthermalresistance
•Avalancherated
•Pb-freeplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
2.5
m
ID
147
A
SuperSO8
8 7 65
56 78
1
23
4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
BSC025N03LS G
Package
PG-TDSON-8
Marking
025N03LS
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2020-08-10





 BSC025N03LS
OptiMOSª3Power-MOSFET,30V
BSC025N03LSG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.2.0,2020-08-10





 BSC025N03LS
OptiMOSª3Power-MOSFET,30V
BSC025N03LSG
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reversediodedv/dt
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
dv/dt
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
-
147
-
93
-
122
-
77
-
25
-
588
-
50
-
135
-
6
-
20
-
83
-
2.5
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W2)
A TC=25°C
A TC=25°C
mJ ID=50A,RGS=25
kV/µs
ID=50A,VDS=24V,di/dt=200A/µs,
Tj,max=150°C
V-
-
TC=25°C
TA=25°C,RthJA=50K/W2)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm2 cooling area2)
RthJC
RthJC
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
-
-
1.5 K/W -
-
-
18 K/W -
-
-
50 K/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.0,2020-08-10



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