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IGBT. MMG150B065PD6EN Datasheet

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IGBT. MMG150B065PD6EN Datasheet






MMG150B065PD6EN IGBT. Datasheet pdf. Equivalent




MMG150B065PD6EN IGBT. Datasheet pdf. Equivalent





Part

MMG150B065PD6EN

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG150B065PD6EN Datasheet


MacMic MMG150B065PD6EN

MMG150B065PD6EN; October 2015 MMG150B065PD6EN 650V 150A IGBT Module Version 01 RoHS Complian t PRODUCT FEATURES □ IGBT3 CHIP(Tren ch+Field Stop technology) □ High shor t circuit capability,self limiting shor t circuit current □ VCE(sat) with pos itive temperature coefficient □ Fast switching and short tail current □ Fr ee wheeling diodes with fast and soft r everse recovery □ Low switch.


MacMic MMG150B065PD6EN

ing losses APPLICATIONS □ High freque ncy switching application □ Medical a pplications □ Motion/servo control UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Vo ltage TJ=25℃ VGES IC Gate Emitter Voltage DC Collector Current TC=25℃ TC=80℃ ICM Repetitive Peak Collecto r Current tp=1ms Ptot Power D.


MacMic MMG150B065PD6EN

issipation Per IGBT T C =25°C unless o therwise specified Values Unit 650 V ±20 200 150 A 300 428 W Diode- inverter ABSOLUTE MAXIMUM RATINGS Sym bol Parameter/Test Conditions T C =25 °C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 650 V IF(AV) IFRM Averag e Forward Current Repetitive Peak Forwa rd Current TC=25℃ tp=1.



Part

MMG150B065PD6EN

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG150B065PD6EN Datasheet




 MMG150B065PD6EN
October 2015
MMG150B065PD6EN
650V 150A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
IC
Gate Emitter Voltage
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
650
V
±20
200
150
A
300
428
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
650
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
150
A
300
I2t
TJ =125, t=10ms, VR=0V
1800
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com





 MMG150B065PD6EN
MMG150B065PD6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=2.4mA
4.9 5.8 6.5
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=150
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
VCE=0V,VGE=±15V, TJ=150
1.45
1.7
-400
2
1.9 V
1 mA
5 mA
400 nA
Qg
Gate Charge
VCE=300V, IC=150A , VGE=±15V
0.95
µC
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=300V,IC=150A
RG =2.2,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
9.3
nF
290
pF
200
ns
210
ns
70
ns
80
ns
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=300V,IC=150A
RG =2.2,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
VCC=300V,IC=150A
RG =2.2,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
tpsc6µS , VGE=15V
TJ=125,VCC=360V
300
ns
330
ns
50
ns
70
ns
0.75
mJ
1.2
mJ
4
mJ
5.15
mJ
750
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.35 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=150A , VGE=0V, TJ=25
IF=150A , VGE=0V, TJ=150
1.55 1.95
V
1.45
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=150A , VR=300V
dIF/dt=-1600A/μs
TJ =150
210
ns
95
A
11
µC
Erec
Reverse Recovery Energy
3.5
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.6 K /W
2





 MMG150B065PD6EN
MMG150B065PD6EN
MODULE CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
Unit
TJmax
Max. Junction Temperature
175
TJop
Operating Temperature
-40~150
Tstg
Storage Temperature
-40~125
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
3000
V
CTI
Comparative Tracking Index
200
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM6
3~5
Nm
3~5
Nm
Weight
300
g
300
25
250
150
200
150
100
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
600
25
500
150
400
300
200
100
VCE=20V
0
7 8 9 10 11 12 13
VGEV
Figure 3. Typical Transfer characteristics
IGBT-inverter
300
250
200
150
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=150
100
50
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
15
VCE=300V
12
IC=150A
VGE=±15V
TJ=150
9
6
3
Eon
Eoff
0
0 5 10 15 20 25 30 35
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3



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