IGBT
March 2019
MMG150CE065PD6TC
650V 150A Three Level Inverter Module
Version 01
RoHS Compliant
PRODUCT FEATURES
□ 650V...
Description
March 2019
MMG150CE065PD6TC
650V 150A Three Level Inverter Module
Version 01
RoHS Compliant
PRODUCT FEATURES
□ 650V IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Low switching losses and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included
APPLICATIONS
□ 3-Level-Applications □ Solar Applications □ UPS Systems
IGBT(T1、T2、T3、T4)
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃,TJmax=175℃ TC=25℃,TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃,TJmax=175℃
Diode(D1、D2、D3、D4、D5、D6)
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms TJ =125℃, t=10ms, VR=0V
Values
Unit
650 V
±20
150
150
A
300
335
W
Values
Unit
650
V
150 A
300
1700
A2S
MacMic Science & Technology Co., Ltd.
3
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
MMG150CE065PD6TC
IGBT(T1、T2、T3、T4)
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Cond...
Similar Datasheet
- MMG150CE065PD6TC IGBT - MacMic