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IGBT. MMG150D120B6UC Datasheet

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IGBT. MMG150D120B6UC Datasheet






MMG150D120B6UC IGBT. Datasheet pdf. Equivalent




MMG150D120B6UC IGBT. Datasheet pdf. Equivalent





Part

MMG150D120B6UC

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG150D120B6UC Datasheet


MacMic MMG150D120B6UC

MMG150D120B6UC; April 2020 PRODUCT FEATURES □ IGBT chi p in trench FS-technology □ Low switc hing losses □ VCE(sat) with positive temperature coefficient □ Fast switch ing and short tail current □ Free whe eling diodes with fast and soft reverse recovery MMG150D120B6UC Version 01 1200V 150A IGBT Module RoHS Compliant APPLICATIONS □ Welding Machine □ Po wer Supplies □ Others IGBT-inve.


MacMic MMG150D120B6UC

rter ABSOLUTE MAXIMUM RATINGS(T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collect or Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Curr ent TC=25℃,TJmax=175℃ TC=100℃,TJ max=175℃ ICM Repetitive Peak Collec tor Current tp=1ms Ptot Power Dissip ation Per IGBT TC=25℃,TJmax=175℃ Values Unit 1200 V ±20 231 15.


MacMic MMG150D120B6UC

0 A 300 937 W Diode-inverter ABSOL UTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter /Test Conditions VRRM Repetitive Rever se Voltage TJ=25℃ IF(AV) Average Fo rward Current IFRM Repetitive Peak Fo rward Current I2t tp=1ms TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 1 50 A 300 5000 A2S MacMic Science & T echnology Co., Ltd. Ad.



Part

MMG150D120B6UC

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG150D120B6UC Datasheet




 MMG150D120B6UC
April 2020
PRODUCT FEATURES
IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
MMG150D120B6UC
Version 01
1200V 150A IGBT Module
RoHS Compliant
APPLICATIONS
Welding Machine
Power Supplies
Others
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=100,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1200
V
±20
231
150
A
300
937
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
150
A
300
5000
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG150D120B6UC





 MMG150D120B6UC
MMG150D120B6UC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
IC=150A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=150A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=150A
RG =3.6Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=150A
RG =3.6Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=150A
RG =3.6Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
6.0
1.7
1.95
2.0
3.8
1
14.6
660
110
130
145
58
62
64
410
460
480
70
100
110
27.2
29.9
9.6
10.1
900
Max. Unit
6.5
2.15
V
100 µA
1
mA
400 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.16 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=150A , VGE=0V, TJ=25
VF
Forward Voltage
IF=150A , VGE=0V, TJ=125
IF=150A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=150A , VR=600V
dIF/dt=-2400A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
MMG150D120B6UC
Min. Typ. Max. Unit
1.75 2.15
1.55
V
1.50
580
ns
152
A
34.7
µC
11.6
mJ
0.3 K /W





 MMG150D120B6UC
MMG150D120B6UC
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Max. Junction Temperature
Operating Temperature
Tstg
Storage Temperature
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
3000
V
225
3~5
Nm
2.5~5
Nm
300
g
300
25
250
150
200
150
100
VGE=15V
50
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
300
Vge=17V
250
Vge=15V
Vge=13V
200
Vge=11V
150
Vge=9V
100
50
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter
MMG150D120B6UC



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