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IGBT. MMG150D170B6EN Datasheet

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IGBT. MMG150D170B6EN Datasheet






MMG150D170B6EN IGBT. Datasheet pdf. Equivalent




MMG150D170B6EN IGBT. Datasheet pdf. Equivalent





Part

MMG150D170B6EN

Description

IGBT



Feature


April 2015 PRODUCT FEATURES □ IGBT3 CH IP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail cur rent □ VCE(sat) with positive tempera ture coefficient □ DIODE CHIP(1700V E MCON 3 technology) □ Free wheeling di odes with fast and soft reverse recover y MMG150D170B6EN 1700V 150A IGBT Modu le Version 01 RoHS Compliant APPLICA TIONS □ High frequency switc.
Manufacture

MacMic

Datasheet
Download MMG150D170B6EN Datasheet


MacMic MMG150D170B6EN

MMG150D170B6EN; hing application □ Medical application s □ Motion/servo control □ UPS syst ems IGBT-inverter ABSOLUTE MAXIMUM RA TINGS Symbol Parameter/Test Condition s VCES Collector Emitter Voltage TJ= 25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Curren t tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwi.


MacMic MMG150D170B6EN

se specified Values Unit 1700 V ±20 210 150 A 300 1070 W Diode-inver ter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C u nless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ= 25℃ 1700 V IF(AV) IFRM Average Fo rward Current Repetitive Peak Forward C urrent TC=25℃ tp=1ms 150 A 300 I2t TJ =125℃, t=10ms, VR=0.


MacMic MMG150D170B6EN

V 4200 A2S MacMic Science & Technolog y Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia n gsu Province, P. R .of China 1 Tel. +86-519-85163708 Fax:+86-519-8516229 1 Post Code:213022 Website:www.macm icst.com MMG150D170B6EN IGBT-inverter ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Pa rameter/Test Conditions Min..

Part

MMG150D170B6EN

Description

IGBT



Feature


April 2015 PRODUCT FEATURES □ IGBT3 CH IP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail cur rent □ VCE(sat) with positive tempera ture coefficient □ DIODE CHIP(1700V E MCON 3 technology) □ Free wheeling di odes with fast and soft reverse recover y MMG150D170B6EN 1700V 150A IGBT Modu le Version 01 RoHS Compliant APPLICA TIONS □ High frequency switc.
Manufacture

MacMic

Datasheet
Download MMG150D170B6EN Datasheet




 MMG150D170B6EN
April 2015
PRODUCT FEATURES
IGBT3 CHIP(1700V Trench+Field Stop technology)
Low turn-off losses, short tail current
VCE(sat) with positive temperature coefficient
DIODE CHIP(1700V EMCON 3 technology)
Free wheeling diodes with fast and soft reverse recovery
MMG150D170B6EN
1700V 150A IGBT Module
Version 01
RoHS Compliant
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1700
V
±20
210
150
A
300
1070
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1700
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
150
A
300
I2t
TJ =125, t=10ms, VR=0V
4200
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG150D170B6EN
MMG150D170B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=6mA
5.2 5.8 6.4
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=150A, VGE=15V, TJ=25
2 2.45 V
IC=150A, VGE=15V, TJ=125
2.4
VCE=1700V, VGE=0V, TJ=25
3 mA
VCE=1700V, VGE=0V, TJ=125
20 mA
VCE=0V,VGE=±15V, TJ=25
-400
400 nA
Rgint
Integrated Gate Resistor
4.3
Qg
Gate Charge
VCE=900V, IC=150A , VGE=±15V
1.8
µC
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=900V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
13.6
nF
450
pF
370
ns
400
ns
40
ns
50
ns
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=900V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=900V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=1000V
650
ns
800
ns
180
ns
300
ns
33
mJ
48
mJ
32
mJ
47
mJ
600
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.14 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=150A , VGE=0V, TJ=25
IF=150A , VGE=0V, TJ=125
1.8 2.2
V
1.9
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=150A , VR=900V
dIF/dt=-3600A/μs
TJ =125
500
ns
240
A
72
µC
Erec
Reverse Recovery Energy
41
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.24 K /W
2




 MMG150D170B6EN
MMG150D170B6EN
MODULE CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
Unit
TJmax
Max. Junction Temperature
175
TJop
Operating Temperature
-40~150
Tstg
Storage Temperature
-40~125
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
4000
V
CTI
Comparative Tracking Index
225
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM6
3~5
Nm
2.5~5
Nm
Weight
300
g
300
25
250
125
200
150
100
50
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
300
250
VCE=20V
200
150
100
25
50
125
0
6 7 8 9 10 11 12 13
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
300
250
200
150
Vge=20V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
TJ=125
100
50
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
140
VCE=900V
120 IC=150A
VGE=±15V
100 TJ=125
80
60
40
20
0
0
5
Eon
Eoff
10
15
20
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3






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