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IGBT. MMG150S120B6UC Datasheet

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IGBT. MMG150S120B6UC Datasheet






MMG150S120B6UC IGBT. Datasheet pdf. Equivalent




MMG150S120B6UC IGBT. Datasheet pdf. Equivalent





Part

MMG150S120B6UC

Description

IGBT



Feature


August 2019 PRODUCT FEATURES □ IGBT ch ip in trench FS-technology □ Low swit ching losses □ VCE(sat) with positive temperature coefficient □ Fast switc hing and short tail current □ Free wh eeling diodes with fast and soft revers e recovery □ Temperature sense includ ed APPLICATIONS □ Welding Machine □ Power Supplies □ Others MMG150S120B 6UC Version 01 1200V 150A IGBT Mod.
Manufacture

MacMic

Datasheet
Download MMG150S120B6UC Datasheet


MacMic MMG150S120B6UC

MMG150S120B6UC; ule RoHS Compliant IGBT-inverter ABSOL UTE MAXIMUM RATINGS(T C =25°C unless o therwise specified) Symbol Parameter/ Test Conditions VCES VGES Collector E mitter Voltage Gate Emitter Voltage TJ =25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=2 5℃,TJmax=175℃ TC=100℃,TJmax=175 tp=1ms Ptot Power Dissipation Per I GBT TC=25℃,TJmax=175℃ Value.


MacMic MMG150S120B6UC

s Unit 1200 V ±20 238 150 A 300 1000 W Diode-inverter ABSOLUTE MAXIM UM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Con ditions VRRM Repetitive Reverse Voltag e TJ=25℃ IF(AV) Average Forward Cu rrent IFRM Repetitive Peak Forward Cu rrent tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 150 A 30 0 3200 A2S MacMic Sci.


MacMic MMG150S120B6UC

ence & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changz hou City, Jiangsu Province, P. R .of Ch ina 1 Tel.:+86-519-85163708 Fax:+ 86-519-85162291 Post Code:213022 Webs ite :www.macmicst.com MMG150S120B6UC IGBT-inverter ELECTRICAL CHARACTERIS TICS (T C =25°C unless otherwise speci fied) Symbol Parameter/Test Condition s VGE(th) Gate Emitter Thres.

Part

MMG150S120B6UC

Description

IGBT



Feature


August 2019 PRODUCT FEATURES □ IGBT ch ip in trench FS-technology □ Low swit ching losses □ VCE(sat) with positive temperature coefficient □ Fast switc hing and short tail current □ Free wh eeling diodes with fast and soft revers e recovery □ Temperature sense includ ed APPLICATIONS □ Welding Machine □ Power Supplies □ Others MMG150S120B 6UC Version 01 1200V 150A IGBT Mod.
Manufacture

MacMic

Datasheet
Download MMG150S120B6UC Datasheet




 MMG150S120B6UC
August 2019
PRODUCT FEATURES
IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
Welding Machine
Power Supplies
Others
MMG150S120B6UC
Version 01
1200V 150A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=175
TC=100,TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1200
V
±20
238
150
A
300
1000
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
150
A
300
3200
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG150S120B6UC
MMG150S120B6UC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
IC=150A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=150A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=150A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=150A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=150A
RG =5.1,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=600V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
6.0
2.0
2.25
2.35
2.5
0.95
15.6
600
160
170
180
60
65
65
400
450
460
50
55
55
21.5
24
7.3
7.7
900
Max. Unit
6.5
2.4
V
1
mA
5
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.15 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=150A , VGE=0V, TJ=25
VF
Forward Voltage
IF=150A , VGE=0V, TJ=125
IF=150A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=150A , VR=600V
dIF/dt=-1900A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
2
2.5
2.05
V
2.05
140
ns
119
A
14.6
µC
4.7
mJ
0.3 K /W




 MMG150S120B6UC
MMG150S120B6UC
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM5
Weight
Values
Unit
175
-40~150
-40~125
3000
V
200
3~5
Nm
2.5~5
Nm
160
g
300
25
150
200
100
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
300
Vge=17V
Vge=15V
Vge=13V
200
Vge=11V
Vge=9V
100
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter






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