DatasheetsPDF.com

IGBT. MMG150WB170H6EN Datasheet

DatasheetsPDF.com

IGBT. MMG150WB170H6EN Datasheet






MMG150WB170H6EN IGBT. Datasheet pdf. Equivalent




MMG150WB170H6EN IGBT. Datasheet pdf. Equivalent





Part

MMG150WB170H6EN

Description

IGBT



Feature


February 2016 PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technolog y) □ Low turn-off losses, short tail current □ VCE(sat) with positive temp erature coefficient □ DIODE CHIP(1700 V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse reco very MMG150WB170H6EN Version 01 1700 V 150A Four-Pack Module RoHS Compliant APPLICATIONS □ High frequen.
Manufacture

MacMic

Datasheet
Download MMG150WB170H6EN Datasheet


MacMic MMG150WB170H6EN

MMG150WB170H6EN; cy switching application □ Medical app lications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MA XIMUM RATINGS(T C =25°C unless otherwi se specified) Symbol Parameter/Test C onditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repeti tive Peak Collector Current TC=25℃, TJmax=175℃ TC=95℃, TJmax=175℃.


MacMic MMG150WB170H6EN

tp=1ms Ptot Power Dissipation Per IGB T TC=25℃, TJmax=175℃ Values Unit 1700 V ±20 230 150 A 300 1250 W Diode-inverter ABSOLUTE MAXIMUM RAT INGS (T C =25°C unless otherwise speci fied) Symbol Parameter/Test Condition s VRRM Repetitive Reverse Voltage TJ= 25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=.


MacMic MMG150WB170H6EN

10ms, VR=0V Values Unit 1700 V 150 A 300 3800 A2S MacMic Science & Tech nology Co., Ltd. Add:#18, Hua Shan Z hong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Te l.:+86-519-85163708 Fax:+86-519-851 62291 Post Code:213022 Website :www .macmicst.com MMG150WB170H6EN IGBT-in verter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise spec.

Part

MMG150WB170H6EN

Description

IGBT



Feature


February 2016 PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technolog y) □ Low turn-off losses, short tail current □ VCE(sat) with positive temp erature coefficient □ DIODE CHIP(1700 V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse reco very MMG150WB170H6EN Version 01 1700 V 150A Four-Pack Module RoHS Compliant APPLICATIONS □ High frequen.
Manufacture

MacMic

Datasheet
Download MMG150WB170H6EN Datasheet




 MMG150WB170H6EN
February 2016
PRODUCT FEATURES
IGBT3 CHIP(1700V Trench+Field Stop technology)
Low turn-off losses, short tail current
VCE(sat) with positive temperature coefficient
DIODE CHIP(1700V EMCON 3 technology)
Free wheeling diodes with fast and soft reverse recovery
MMG150WB170H6EN
Version 01
1700V 150A Four-Pack Module
RoHS Compliant
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=95, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1700
V
±20
230
150
A
300
1250
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1700
V
150
A
300
3800
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG150WB170H6EN
MMG150WB170H6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=900V, IC=150A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=900V,IC=150A
RG =9.1,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=900V,IC=150A
RG =9.1,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=150A
RG =9.1,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=1000V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
5.8
2
2.4
5
1.7
13.5
450
280
300
50
66
810
1000
180
300
33
48
32
47
600
Max. Unit
6.4
2.45 V
3
mA
20 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.12 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=150A , VGE=0V, TJ=25
IF=150A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=150A , VR=900V
dIF/dt=-2150A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.8
2.2
V
1.9
550
ns
190
A
65.5
µC
36
mJ
0.21 K /W
2




 MMG150WB170H6EN
MMG150WB170H6EN
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
4000
V
2.5~5
Nm
3~5
Nm
350
g
300
250
25
125
200
150
100
50
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
300
Vge=20V
250
Vge=15V
Vge=12V
200
Vge=10V
150
Vge=8V
100
TJ=125
50
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter






Recommended third-party MMG150WB170H6EN Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)