Document
TIP120, TIP121, TIP122 TIP125, TIP127
Datasheet
Low voltage complementary power Darlington transistors
Features
• Low collector-emitter saturation voltage
TAB
• Complementary NPN - PNP transistors
TO-220
1 23
Application
• General purpose linear and switching
C (2, TAB)
C (2, TAB)
B (1)
B (1)
R1 R2
R1 R2
SC07840
E (3)
SC07850
E (3)
NPN: R1 = 7 kΩ, R2 = 70 Ω PNP: R1 = 16 kΩ, R2 = 60 Ω
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Product status links TIP120 TIP121 TIP122 TIP125 TIP127
DS0854 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Note:
TIP120, TIP121, TIP122, TIP125, TIP127
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCBO VCEO VEBO
IC ICM IB
PTOT
Tstg TJ
Collector-base voltage (IE = 0 A) Collector-emitter voltage (IB = 0 A) Collector-base voltage (IC = 0 A) Collector current Collector peak current Base current Total power dissipation at TC ≤ 25°C Total power dissipation at TA ≤ 25°C Storage temperature range Maximum operating junction temperature
Value
NPN TIP120
TIP121
TIP122 Unit
PNP TIP125
TIP127
60
80
100
V
60
80
100
V
5
V
5
A
8
A
0.12
A
65 W
2
-65 to 150
°C
150
°C
For PNP types voltage and current values are negative.
Symbol RthJC RthJA
Table 2. Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient
Value 1.92 62.5
Unit °C/W °C/W
DS0854 - Rev 5
page 2/13
2
Note:
TIP120, TIP121, TIP122, TIP125, TIP127
Electrical characteristics
Electrical characteristics
TC = 25°C unless otherwise specified.
Table 3. Electrical characteristics
Symbol
Parameter
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VCEO(sus)(1) Collector-emitter sustaining voltage
VCE(sat)(1) Collector-emitter saturation voltage
VBE(on)(1) Base-emitter on voltage
hFE(1)
DC current gain
1. Pulsed: Pulse duration ≤ 300 μs, duty cycle ≤ 2%.
Test conditions IB = 0 A, VCE = 30 V for TIP120/125 IB = 0 A, VCE = 40 V for TIP121 IB = 0 A, VCE = 50 V for TIP122/127 IB = 0 A, VCE = 60 V for TIP120/125 IB = 0 A, VCE = 80 V for TIP121 IB = 0 A, VCE = 100 V for TIP122/127 IC = 0 A, VEB = 5 V IB = 0 A, IC = 30 mA for TIP120/125 IB = 0 A, IC = 30 mA for TIP121 IB = 0 A, IC = 30 mA for TIP122/127 IC = 3 A, IB = 12 mA IC = 5 A IB = 20 mA IC = 3 A, VCE = 3 V IC = 0.5 A, VCE = 3 V IC = 3 A, VCE = 3 V
Min.
60 80 100
1000 1000
Typ. -
Max. 0.5 0.5 0.5 0.2 0.2 0.2 2
2 4 2.5
Unit mA
mA mA V V V
For PNP types voltage and current values are negative.
DS0854 - Rev 5
page 3/13
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
I C( A)
40
20 ICMAX. pulsed
4
ICMAX. cont.
2
AM0 0 6 9 5 v1
PULSE OPERATION for single non repetitive pulse
10 ms
10 0 ms
0 .4
1m s
0 .2
D.C. OPERATION
0 .0 4 0 .0 2
2
4
20 40
200 CE
Figure 3. DC current gain (NPN)
hFE
AM00696v1
TIP120, TIP121, TIP122, TIP125, TIP127
Electrical characteristics (curves)
Figure 2. Derating curve
Figure 4. DC current gain (PNP)
hFE
AM00697v1
1000 100 100.01
Tj= -40 °C Tj= 25 °C Tj=125 °C VCE= 3 V
0.1
1
Ic(A)
Figure 5. Collector-emitter saturation voltage (NPN)
VCE(sat) (V)
AM00698v1
hFE= 250 1.4
1000 100 10 -0.01
Tj= -40 °C Tj= 25 °C Tj=125 °C VCE= -3 V
-0.1
-1
Ic(A)
Figure 6. Collector-emitter saturation voltage (PNP)
VCE(sat) (V)
AM00699v1
hFE= 250 -1.4
Tj= -40 °C Tj= 25 °C Tj=125 °C
Tj= -40 °C Tj= 25 °C Tj=125 °C
DS0854 - Rev 5
page 4/13
Figure 7. Base-emitter saturation voltage (NPN)
VBE(sat) (V)
AM00700v1
hFE= 250 2.0
1.5 1.0 0.5
0.1
Tj= -40 °C Tj= 25 °C Tj=125 °C
1
Ic(A)
Figure 9. Base-emitter on voltage (NPN)
VBE(on) (V)
AM03262v1
VCE= 3 V 2.0
1.5 1.0 0.5
0.1
Tj= -40 °C Tj= 25 °C Tj=125 °C
1
Ic(A)
Figure 11. Resistive load switching time (NPN, on)
t(ns)
VCC = 30 V hFE = 250 VBE(off) = -5 V IB(on) = -IB(off)
AM03264v1
100
Delay time Rise time
100
12
3 45
Ic(A)
TIP120, TIP121, TIP122, TIP125, TIP127
Electrical characteristics (curves)
Figure 8. Base-emitter saturation voltage (PNP)
VBE(sat) (V)
AM03261v1
hFE= 250 -2.0
-1.5 -1.0 -0.5
-0.1
Tj= -40 °C Tj= 25 °C Tj=125 °C
-1
Ic(A)
Figure 10. Base-emitter on voltage (PNP)
VBE(on) (V)
AM03263v1
-2.0 VCE= -3 V
-1.5 -1.0 -0.5
- 0.1
Tj= -40 °C Tj= 25 °C Tj=125 °C
-1
Ic(A)
Figure 12. Resistive load switching time (PNP, on)
t(ns)
VCC = -30 V hFE = 250 VBE(off) = 5 V -IB(on) = IB(off)
AM03265v1
100
Delay time Rise time
100
-1 -2 -3 -4 -5
Ic(A)
DS0854 - Rev 5
page 5/13
Figure 13. Resistive load switching time (NPN, off)
t(ns)
AM03266v1
1000
VCC = 30 V hFE = 250 VBE(off) = -5 V IB(on) = -IB(off)
Storage time Fall time
100 0 12 34 5
Ic(A).