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TIP120 Dataheets PDF



Part Number TIP120
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Low voltage complementary power Darlington transistor
Datasheet TIP120 DatasheetTIP120 Datasheet (PDF)

TIP120, TIP121, TIP122 TIP125, TIP127 Datasheet Low voltage complementary power Darlington transistors Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors TO-220 1 23 Application • General purpose linear and switching C (2, TAB) C (2, TAB) B (1) B (1) R1 R2 R1 R2 SC07840 E (3) SC07850 E (3) NPN: R1 = 7 kΩ, R2 = 70 Ω PNP: R1 = 16 kΩ, R2 = 60 Ω Description The devices are manufactured in planar technology with “base island” layout and monol.

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TIP120, TIP121, TIP122 TIP125, TIP127 Datasheet Low voltage complementary power Darlington transistors Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors TO-220 1 23 Application • General purpose linear and switching C (2, TAB) C (2, TAB) B (1) B (1) R1 R2 R1 R2 SC07840 E (3) SC07850 E (3) NPN: R1 = 7 kΩ, R2 = 70 Ω PNP: R1 = 16 kΩ, R2 = 60 Ω Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Product status links TIP120 TIP121 TIP122 TIP125 TIP127 DS0854 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Note: TIP120, TIP121, TIP122, TIP125, TIP127 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0 A) Collector-emitter voltage (IB = 0 A) Collector-base voltage (IC = 0 A) Collector current Collector peak current Base current Total power dissipation at TC ≤ 25°C Total power dissipation at TA ≤ 25°C Storage temperature range Maximum operating junction temperature Value NPN TIP120 TIP121 TIP122 Unit PNP TIP125 TIP127 60 80 100 V 60 80 100 V 5 V 5 A 8 A 0.12 A 65 W 2 -65 to 150 °C 150 °C For PNP types voltage and current values are negative. Symbol RthJC RthJA Table 2. Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Value 1.92 62.5 Unit °C/W °C/W DS0854 - Rev 5 page 2/13 2 Note: TIP120, TIP121, TIP122, TIP125, TIP127 Electrical characteristics Electrical characteristics TC = 25°C unless otherwise specified. Table 3. Electrical characteristics Symbol Parameter ICEO Collector cut-off current ICBO Collector cut-off current IEBO Emitter cut-off current VCEO(sus)(1) Collector-emitter sustaining voltage VCE(sat)(1) Collector-emitter saturation voltage VBE(on)(1) Base-emitter on voltage hFE(1) DC current gain 1. Pulsed: Pulse duration ≤ 300 μs, duty cycle ≤ 2%. Test conditions IB = 0 A, VCE = 30 V for TIP120/125 IB = 0 A, VCE = 40 V for TIP121 IB = 0 A, VCE = 50 V for TIP122/127 IB = 0 A, VCE = 60 V for TIP120/125 IB = 0 A, VCE = 80 V for TIP121 IB = 0 A, VCE = 100 V for TIP122/127 IC = 0 A, VEB = 5 V IB = 0 A, IC = 30 mA for TIP120/125 IB = 0 A, IC = 30 mA for TIP121 IB = 0 A, IC = 30 mA for TIP122/127 IC = 3 A, IB = 12 mA IC = 5 A IB = 20 mA IC = 3 A, VCE = 3 V IC = 0.5 A, VCE = 3 V IC = 3 A, VCE = 3 V Min. 60 80 100 1000 1000 Typ. - Max. 0.5 0.5 0.5 0.2 0.2 0.2 2 2 4 2.5 Unit mA mA mA V V V For PNP types voltage and current values are negative. DS0854 - Rev 5 page 3/13 2.1 Electrical characteristics (curves) Figure 1. Safe operating area I C( A) 40 20 ICMAX. pulsed 4 ICMAX. cont. 2 AM0 0 6 9 5 v1 PULSE OPERATION for single non repetitive pulse 10 ms 10 0 ms 0 .4 1m s 0 .2 D.C. OPERATION 0 .0 4 0 .0 2 2 4 20 40 200 CE Figure 3. DC current gain (NPN) hFE AM00696v1 TIP120, TIP121, TIP122, TIP125, TIP127 Electrical characteristics (curves) Figure 2. Derating curve Figure 4. DC current gain (PNP) hFE AM00697v1 1000 100 100.01 Tj= -40 °C Tj= 25 °C Tj=125 °C VCE= 3 V 0.1 1 Ic(A) Figure 5. Collector-emitter saturation voltage (NPN) VCE(sat) (V) AM00698v1 hFE= 250 1.4 1000 100 10 -0.01 Tj= -40 °C Tj= 25 °C Tj=125 °C VCE= -3 V -0.1 -1 Ic(A) Figure 6. Collector-emitter saturation voltage (PNP) VCE(sat) (V) AM00699v1 hFE= 250 -1.4 Tj= -40 °C Tj= 25 °C Tj=125 °C Tj= -40 °C Tj= 25 °C Tj=125 °C DS0854 - Rev 5 page 4/13 Figure 7. Base-emitter saturation voltage (NPN) VBE(sat) (V) AM00700v1 hFE= 250 2.0 1.5 1.0 0.5 0.1 Tj= -40 °C Tj= 25 °C Tj=125 °C 1 Ic(A) Figure 9. Base-emitter on voltage (NPN) VBE(on) (V) AM03262v1 VCE= 3 V 2.0 1.5 1.0 0.5 0.1 Tj= -40 °C Tj= 25 °C Tj=125 °C 1 Ic(A) Figure 11. Resistive load switching time (NPN, on) t(ns) VCC = 30 V hFE = 250 VBE(off) = -5 V IB(on) = -IB(off) AM03264v1 100 Delay time Rise time 100 12 3 45 Ic(A) TIP120, TIP121, TIP122, TIP125, TIP127 Electrical characteristics (curves) Figure 8. Base-emitter saturation voltage (PNP) VBE(sat) (V) AM03261v1 hFE= 250 -2.0 -1.5 -1.0 -0.5 -0.1 Tj= -40 °C Tj= 25 °C Tj=125 °C -1 Ic(A) Figure 10. Base-emitter on voltage (PNP) VBE(on) (V) AM03263v1 -2.0 VCE= -3 V -1.5 -1.0 -0.5 - 0.1 Tj= -40 °C Tj= 25 °C Tj=125 °C -1 Ic(A) Figure 12. Resistive load switching time (PNP, on) t(ns) VCC = -30 V hFE = 250 VBE(off) = 5 V -IB(on) = IB(off) AM03265v1 100 Delay time Rise time 100 -1 -2 -3 -4 -5 Ic(A) DS0854 - Rev 5 page 5/13 Figure 13. Resistive load switching time (NPN, off) t(ns) AM03266v1 1000 VCC = 30 V hFE = 250 VBE(off) = -5 V IB(on) = -IB(off) Storage time Fall time 100 0 12 34 5 Ic(A).


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