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Darlington transistor. TIP120 Datasheet

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Darlington transistor. TIP120 Datasheet






TIP120 transistor. Datasheet pdf. Equivalent




TIP120 transistor. Datasheet pdf. Equivalent





Part

TIP120

Description

Low voltage complementary power Darlington transistor



Feature


TIP120, TIP121, TIP122 TIP125, TIP127 Da tasheet Low voltage complementary power Darlington transistors Features • L ow collector-emitter saturation voltage TAB • Complementary NPN - PNP transi stors TO-220 1 23 Application • Ge neral purpose linear and switching C ( 2, TAB) C (2, TAB) B (1) B (1) R1 R 2 R1 R2 SC07840 E (3) SC07850 E (3 ) NPN: R1 = 7 kΩ, R2 = .
Manufacture

STMicroelectronics

Datasheet
Download TIP120 Datasheet


STMicroelectronics TIP120

TIP120; 70 Ω PNP: R1 = 16 kΩ, R2 = 60 Ω Desc ription The devices are manufactured in planar technology with “base island layout and monolithic Darlington con figuration. The resulting transistors s how exceptional high gain performance c oupled with very low saturation voltage . Product status links TIP120 TIP121 T IP122 TIP125 TIP127 DS0854 - Rev 5 - M ay 2021 For further infor.


STMicroelectronics TIP120

mation contact your local STMicroelectro nics sales office. www.st.com 1 Note: TIP120, TIP121, TIP122, TIP125, TIP12 7 Electrical ratings Electrical rating s Table 1. Absolute maximum ratings S ymbol Parameter VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltag e (IE = 0 A) Collector-emitter voltage (IB = 0 A) Collector-base voltage (IC = 0 A) Collector cu.


STMicroelectronics TIP120

rrent Collector peak current Base curren t Total power dissipation at TC ≤ 25 C Total power dissipation at TA ≤ 25 °C Storage temperature range Maximum o perating junction temperature Value N PN TIP120 TIP121 TIP122 Unit PNP TIP 125 TIP127 60 80 100 V 60 80 10 0 V 5 V 5 A 8 A 0.12 A 65 W 2 -65 to 150 °C 150 °C For PNP ty pes voltage and current va.

Part

TIP120

Description

Low voltage complementary power Darlington transistor



Feature


TIP120, TIP121, TIP122 TIP125, TIP127 Da tasheet Low voltage complementary power Darlington transistors Features • L ow collector-emitter saturation voltage TAB • Complementary NPN - PNP transi stors TO-220 1 23 Application • Ge neral purpose linear and switching C ( 2, TAB) C (2, TAB) B (1) B (1) R1 R 2 R1 R2 SC07840 E (3) SC07850 E (3 ) NPN: R1 = 7 kΩ, R2 = .
Manufacture

STMicroelectronics

Datasheet
Download TIP120 Datasheet




 TIP120
TIP120, TIP121, TIP122
TIP125, TIP127
Datasheet
Low voltage complementary power Darlington transistors
Features
• Low collector-emitter saturation voltage
TAB
• Complementary NPN - PNP transistors
TO-220
1 23
Application
• General purpose linear and switching
C (2, TAB)
C (2, TAB)
B (1)
B (1)
R1
R2
R1
R2
SC07840
E (3)
SC07850
E (3)
NPN: R1 = 7 kΩ, R2 = 70 Ω PNP: R1 = 16 kΩ, R2 = 60 Ω
Description
The devices are manufactured in planar technology with “base island” layout and
monolithic Darlington configuration. The resulting transistors show exceptional high
gain performance coupled with very low saturation voltage.
Product status links
TIP120
TIP121
TIP122
TIP125
TIP127
DS0854 - Rev 5 - May 2021
For further information contact your local STMicroelectronics sales office.
www.st.com




 TIP120
1
Note:
TIP120, TIP121, TIP122, TIP125, TIP127
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
IB
PTOT
Tstg
TJ
Collector-base voltage (IE = 0 A)
Collector-emitter voltage (IB = 0 A)
Collector-base voltage (IC = 0 A)
Collector current
Collector peak current
Base current
Total power dissipation at TC ≤ 25°C
Total power dissipation at TA ≤ 25°C
Storage temperature range
Maximum operating junction temperature
Value
NPN TIP120
TIP121
TIP122 Unit
PNP TIP125
TIP127
60
80
100
V
60
80
100
V
5
V
5
A
8
A
0.12
A
65
W
2
-65 to 150
°C
150
°C
For PNP types voltage and current values are negative.
Symbol
RthJC
RthJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Value
1.92
62.5
Unit
°C/W
°C/W
DS0854 - Rev 5
page 2/13




 TIP120
2
Note:
TIP120, TIP121, TIP122, TIP125, TIP127
Electrical characteristics
Electrical characteristics
TC = 25°C unless otherwise specified.
Table 3. Electrical characteristics
Symbol
Parameter
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VCEO(sus)(1) Collector-emitter sustaining voltage
VCE(sat)(1) Collector-emitter saturation voltage
VBE(on)(1) Base-emitter on voltage
hFE(1)
DC current gain
1. Pulsed: Pulse duration ≤ 300 μs, duty cycle ≤ 2%.
Test conditions
IB = 0 A, VCE = 30 V for TIP120/125
IB = 0 A, VCE = 40 V for TIP121
IB = 0 A, VCE = 50 V for TIP122/127
IB = 0 A, VCE = 60 V for TIP120/125
IB = 0 A, VCE = 80 V for TIP121
IB = 0 A, VCE = 100 V for TIP122/127
IC = 0 A, VEB = 5 V
IB = 0 A, IC = 30 mA for TIP120/125
IB = 0 A, IC = 30 mA for TIP121
IB = 0 A, IC = 30 mA for TIP122/127
IC = 3 A, IB = 12 mA
IC = 5 A IB = 20 mA
IC = 3 A, VCE = 3 V
IC = 0.5 A, VCE = 3 V
IC = 3 A, VCE = 3 V
Min.
60
80
100
1000
1000
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
0.5
0.5
0.5
0.2
0.2
0.2
2
2
4
2.5
Unit
mA
mA
mA
V
V
V
For PNP types voltage and current values are negative.
DS0854 - Rev 5
page 3/13






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