18N50

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Features RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A Description Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested Applications LCD/LED/PDP TV Lighting UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Uninterruptible Power Supply D GDS TO-220 GDS G TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FDP18N50 FDPF18N50 / FDPF18N50T VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 18 18 * 10.8 10.8 * 72 72 * ±30 945 18 23.5 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Cas...