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Trench IGBT. BT40T60ANFU Datasheet

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Trench IGBT. BT40T60ANFU Datasheet






BT40T60ANFU IGBT. Datasheet pdf. Equivalent




BT40T60ANFU IGBT. Datasheet pdf. Equivalent





Part

BT40T60ANFU

Description

Silicon FS Trench IGBT



Feature


Silicon FS Trench IGBT ○R BT40T60 AN FU General Description: VCES 600 V Using HUAJING's proprietary trench d esign and advanced Field Stop (FS) IC 40 A technology, offering superior co nduction and switching performances. P tot (TC=25℃) 280 W VCE(sat) 1. 9 V Features: l FS Trench Technolog y, Positive temperature coefficient l L ow saturation voltage: VCE(sat.
Manufacture

Huajing Microelectronics

Datasheet
Download BT40T60ANFU Datasheet


Huajing Microelectronics BT40T60ANFU

BT40T60ANFU; ), typ= 1.9V @ IC = 40A and TC = 25°C l RoHS Compliant Applications: l Weld ing l Solar Inverter l UPS Absolute Ma ximum Ratings(Tj= 25℃ unless otherw ise specified): Symbol Parameter Rating VCES VGES IC ICMa1 IF Collect or-Emitter Voltage Gate- Emitter Voltag e Collector Current@TC=25℃ Collector Current @TC = 100 °C Pulsed Collector Current@TC=25℃ Diode Continuous .


Huajing Microelectronics BT40T60ANFU

Forward Current @TC = 100 °C 600 ±20 80 40 120 20 IFM Diode Maximum Forwar d Current Power Dissipation @ TC = 25 C PD Power Dissipation @TC = 100 °C Power Dissipation @TA = 25 °C 100 2 80 110 3.125 TJ, Tstg Operating Juncti on and Storage Temperature Range -55 t o +150 TL Maximum Temperature for Sol dering 270 a1:Repetitive rating; pu lse width limited by maxi.


Huajing Microelectronics BT40T60ANFU

mum junction temperature Units V V A A A A A W W W ℃ ℃ WUXI CHI NA RESOUR CES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of7 2 017 V01 BT40T60 AN FU ○R Thermal Characteristics Symb ol Parameter Typ. Max. RθJC Therm al Resistance, Junction to case for IGB T -- 0.446 RθJC Thermal Resistance , Junction to case for Diode -- 1.25 RθJA Thermal Resistance,.

Part

BT40T60ANFU

Description

Silicon FS Trench IGBT



Feature


Silicon FS Trench IGBT ○R BT40T60 AN FU General Description: VCES 600 V Using HUAJING's proprietary trench d esign and advanced Field Stop (FS) IC 40 A technology, offering superior co nduction and switching performances. P tot (TC=25℃) 280 W VCE(sat) 1. 9 V Features: l FS Trench Technolog y, Positive temperature coefficient l L ow saturation voltage: VCE(sat.
Manufacture

Huajing Microelectronics

Datasheet
Download BT40T60ANFU Datasheet




 BT40T60ANFU
Silicon FS Trench IGBT
R
BT40T60 ANFU
General Description
VCES
600
V
Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC
40
A
technology, offering superior conduction and switching performances.
Ptot TC=25℃) 280
W
VCE(sat)
1.9
V
Features
l FS Trench Technology, Positive temperature coefficient
l Low saturation voltage: VCE(sat), typ= 1.9V
@ IC = 40A and TC = 25°C
l RoHS Compliant
Applications
l Welding
l Solar Inverter
l UPS
Absolute Maximum RatingsTj= 25unless otherwise specified):
Symbol
Parameter
Rating
VCES
VGES
IC
ICMa1
IF
Collector-Emitter Voltage
Gate- Emitter Voltage
Collector Current@TC=25
Collector Current @TC = 100 °C
Pulsed Collector Current@TC=25
Diode Continuous Forward Current @TC = 100 °C
600
±20
80
40
120
20
IFM
Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
PD
Power Dissipation @TC = 100 °C
Power Dissipation @TA = 25 °C
100
280
110
3.125
TJ, Tstg Operating Junction and Storage Temperature Range
-55 to +150
TL
Maximum Temperature for Soldering
270
a1Repetitive rating; pulse width limited by maximum junction temperature
Units
V
V
A
A
A
A
A
W
W
W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of7 2 017 V01




 BT40T60ANFU
BT40T60 ANFU
R
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Thermal Resistance, Junction to case for IGBT
--
0.446
RθJC
Thermal Resistance, Junction to case for Diode
--
1.25
RθJA
Thermal Resistance, Junction to Ambient
--
40
Electrical Characteristics of the IGBTTj= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions Min. Typ. Max.
V(BR)CES Collector-Emitter Breakdown Voltage VGE=0V,ICE=250uA 600
--
--
ICES
Collector-Emitter Leakage Current
VGE =0V
VCE= 600V
--
-- 1.0
IGES(F) Gate to Emitter Forward Leakage
VGE =+20V
-- -- +250
IGES(R) Gate to Source Reverse Leakage
VGE =-20V
-- -- -250
ON Characteristics
VCE(sat) Collector-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
IC=40A,VGE=15V -- 1.9 2.4
IC=1mA,VCE=VGE 4.0 5.7 7.0
Dynamic Characteristics
Cies
Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching Characteristics
-- 3070 --
VCE=30V,VGE=0V
f=1MHz
--
123
--
-- 80 --
td(on) Turn-on Delay Time
-- 42 --
tr
td(off)
tf
Eon
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
-- 50 --
VCE=400V,IC=40A
VGE=15V, Rg=10Ω
Inductive Load
--
--
207
53
--
--
Tj=25
-- 1.6 --
Eoff
Turn-Off Switching Loss
-- 0.82 --
Ets
Total Switching Loss
-- 2.42 --
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc Gate to Collector Charge
-- 165 --
VCE=400V,IC=40A
VGE=15V
--
15
--
-- 96 --
Electrical Characteristics of the DIODETj= 25unless otherwise specified):
Symbol
Parameter
Test Conditions Min. Typ. Max.
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Irrm
Reverse Recovery Current
Qrr
Reverse Recovery Charge
Pulse width t tp300µs,δ≤2%
IF=20A
IF=20A
di/dt=200A/uS
-- 1.8 2.6
-- 80 --
--
6
--
-- 240 --
Units
/W
/W
/W
Units
V
mA
nA
nA
V
V
pF
ns
mJ
nC
Units
V
ns
A
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 2 of 7 201 7 V01




 BT40T60ANFU
BT40T60 ANFU
R
Typical Performance Characteristics
VGE= 19V
17V
15V
VGE= 19V
13V
17V
15V
13V
TJ=25
11V
TJ=125
11V
9V
9V
Collector-Emitter Voltage, VCE (V)
Figure 1.Output Characteristics
80
VGE=15V
60 TJ=25——
TJ=125– – –
40
20
0
0
1
2
3
4
Collector-Emitter Voltage, VCE (V)
Figure 3.Saturation Voltage Characteristics
TC=25
IC=40A
Collector-Emitter Voltage, VCE (V)
Figure 2.Output Characteristics
VGE=15V
IC=80A
IC=40A
IC=20A
Case Temperature, TC ()
Figure 4.Saturation Voltage TC Characteristics
TC=125
IC=40A
IC=20A
IC=80A
IC=20A
IC=80A
Gage-Emitter Voltage, VGE (V)
Figure 5.VCE(sat)VGE Characteristics
Gate-Emitter Voltage, VGE (V)
Figure 6.VCE(sat)VGE Characteristics
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 3 of 7 201 7 V01






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