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MOSFET. MSG20T65FQT Datasheet

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MOSFET. MSG20T65FQT Datasheet






MSG20T65FQT MOSFET. Datasheet pdf. Equivalent




MSG20T65FQT MOSFET. Datasheet pdf. Equivalent





Part

MSG20T65FQT

Description

MOSFET

Manufacture

maspower

Datasheet
Download MSG20T65FQT Datasheet


maspower MSG20T65FQT

MSG20T65FQT; Features  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25° C  RoHS product MSG20T65FQS/T/C Ap plications  General purpose inverter s  UPS Absolute Ratings(Tc=25℃ Parameter Collector-Emmiter Voltage Collector Current-continuous Symbol MSG2 MSG2 MSG2 0T65F 0T65F 0T65F Unit Q S QT QC Vces 650 V Ic T=25℃ 40 .


maspower MSG20T65FQT

A T=100℃ 20 A Collector Current-pu lse(note 1) ICM 80 A Diode RMS forw ard current IF T=25℃ T=100℃ 40 20 A A Gate-Emmiter Voltage Turn-off sa fe area Surge non repetitive forward cu rrent tp=10ms sinusoidal VGES - IFSM ±20 V 180 A 80 A Power Dissipati on PD TC=25℃ 156 35 162 W Diode For ward Current TC=100℃ 20 A Operati ng and Storage Temperature Ra.


maspower MSG20T65FQT

nge TJ,TSTG -55~+150 ℃ Maximum Lea d Temperature for Soldering Purposes T L 300 ℃ *Collector current limited by maximum Junction temperature Therm al Characteristic Parameter Collector- Emmiter Voltage H1.01 Symbol Tests con ditions Min Typ Max Units Off-Character istics BVCES IC=500μA,VGE=0V 650 - - V Maspower 1 MSG20T65FQS/T/C Break down Voltage Temperatur.



Part

MSG20T65FQT

Description

MOSFET

Manufacture

maspower

Datasheet
Download MSG20T65FQT Datasheet




 MSG20T65FQT
Features
Low gate charge
Trench FS Technology,
saturation voltage: VCE(sat),
typ =1.6V,IC=20A and TC =25°C
RoHS product
MSG20T65FQS/T/C
Applications
General purpose inverters
UPS
Absolute RatingsTc=25℃)
Parameter
Collector-Emmiter Voltage
Collector Current-continuous
Symbol
MSG2 MSG2 MSG2
0T65F 0T65F 0T65F Unit
QS QT QC
Vces
650
V
Ic T=25
40
A
T=100
20
A
Collector Current-pulse(note 1)
ICM
80
A
Diode RMS forward current
IF T=25
T=100
40
20
A
A
Gate-Emmiter Voltage
Turn-off safe area
Surge non repetitive forward
current tp=10ms sinusoidal
VGES
-
IFSM
±20
V
180
A
80
A
Power Dissipation
PD TC=25156 35 162 W
Diode Forward Current
TC=100
20
A
Operating and Storage
Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for
Soldering Purposes
TL
300
*Collector current limited by maximum Junction temperature
Thermal Characteristic
Parameter
Collector-Emmiter
Voltage
H1.01
Symbol Tests conditions Min Typ Max Units
Off-Characteristics
BVCES
IC=500μA,VGE=0V 650 - - V
Maspower
1





 MSG20T65FQT
MSG20T65FQS/T/C
Breakdown Voltage
Temperature
Coefficient
BVCES/TJ
IC=1mA,referenced
to 25
-
0.5
-
V/
Zero Gate Voltage
Collector Current
ICES
VCE=650V,VGE=0V,
TC=25
-
10 μA
Gate-body leakage
current
Gate-Emmiter
Threshold Voltage
Collector-Emmiter
saturation
Voltage
Short Collector current
(Note 2)
Input capacitance
Output capacitance
Reverse transfer
capacitance
IGESF
VCE=0V,VGE=±20V - - 200 nA
On-Characteristics
VGE(th)
VCE=VGE,
lc=250uA
4.5 - 6.5 V
VCESAT
VGE=15V,IC=20A
TC=25
-
1.6 2.0
Tc=125
1.75 2.15 V
TC=175
Ic(sc)
VGE=15V
VCE=360V tsc<
10us Tc=25
Dynamic Characteristics
Cies
VCE=25V,
Coes
Cres
VGE=0V,
f=1.0MHZ,
Tc=25
1.9 2.3
116.7
A
- 1500 - pF
- 128 - pF
- 28.7 - pF
Switching Characteristics
Turn-On delay time
td(on)
- 16 - ns
Turn-On rise time
Turn-off delay time
Turn-off Fall time
Turn-on energy
tr
td(off)
tf
Eon
- 56 - ns
VCE=400V,Ic=20A, - 52 - ns
RG=10Ω,VGE=15V
Tc=25Inductive
-
82 -
ns
Load
- 0.79 - mJ
Turn-off energy
Eoff
- 0.3 - mJ
Total switching Energy
Etotal
- 1.09 - mJ
Total Gate Charge
VCE=400V,Ic=20A
Qg
RG=10Ω,VGE=15V - 43.9 - nC
(note3,4)
Anti-Paraller Diode Characteristics and Maximum Ratings
Diode Forward
Voltage
VF
VGE=0V,IF=20A.
TC=25
- 1.4 -
V
VGE=0V,IF=20A.
TC=175
- 1.0 -
V
H1.01
Maspower
2





 MSG20T65FQT
MSG20T65FQS/T/C
Diode Reverse
recovery time
Reverse recovery
charge
Diode Reverse
recovery Current
trr
- 254 - ns
VGE=0V, IF=20A
Qrr
dl=/dt=100A/us - 347 - uC
(note 4)
Irrm
- 2.7 - A
Parameter
Symbol
MSG20T65
FQS
MSG20T65
FQT
MSG20T65
FQC
Unit
IGBT Thermal
Resistance,Junction to Case
FRD Thermal
Resistance,Junction to Case
Thermal Resistance,Junction
to Ambitent
Rth(j-c)
Rth(j-c)
Rth(j-A)
3.57
7.7
62.5
0.77
2.05
62.5
0.77 /W
2.05 /W
33.8 /W
type
MSG20T65FQS
MSG20T65FQT
MSG20T65FQC
Package
TO-220F
TO-220
TO-247
H1.01
Maspower
3



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