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MOSFET. MSG25T120FQC Datasheet

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MOSFET. MSG25T120FQC Datasheet






MSG25T120FQC MOSFET. Datasheet pdf. Equivalent




MSG25T120FQC MOSFET. Datasheet pdf. Equivalent





Part

MSG25T120FQC

Description

MOSFET



Feature


Features  Low gate charge  FS Tech nology  Saturation voltage:VCE(sat), typ= 1.75V @ IC=25A and TC=25℃  Ro HS product Applications  General pur pose inverters  Induction heating(IH )  UPS Order Codes MSG25T120FQC Ma rking MSG25T120FQC MSG25T120FQC Packag e TO-247 Absolute Ratings(Tc=25℃ Parameter Collector-Emmiter Voltage Symbol Vces MSG25T120FLC Unit 1200 V.
Manufacture

maspower

Datasheet
Download MSG25T120FQC Datasheet


maspower MSG25T120FQC

MSG25T120FQC; Collector Current-continuous Ic T=25 T=100℃ 50 25 A A Collector Curr ent-pulse(note 1) ICM 60 A Diode fo rward current @ TC= 100°C IF 25 A Gate-Emmiter Voltage VGES ±20 V Tu rn-off safe area - 60 A Power Dissi pation PD TC=25℃ 350 W Diode Forw ard Current TC=100℃ 25 A Operatin g and Storage Temperature Range Maximum Lead Temperature for Solder.


maspower MSG25T120FQC

ing Purposes TJ,TSTG TL -55~+150 ℃ 300 ℃ Collector current limited by maximum junction temperature Thermal Characteristic Parameter Symbol Tests conditions Min Typ Max Units Off-Chara cteristics H1.02 Maspower 1 MSG25T1 20FQC Collector-Emmiter Voltage Breakd own Voltage Temperature Coefficient Zer o Gate Voltage Collector Current Gate-b ody leakage current, f.


maspower MSG25T120FQC

orward Gate-Emmiter Threshold Voltage B VCES IC=500uA,VGE=0V 1200 - - V △BV CES/△TJ IC=1mA,referenced to 25℃ - 0.6 - V/℃ VCE=1200V,VGE=0 V,TC= 25℃ - - 0.2 mA ICES TC=100℃ 2 mA TC=150℃ - - 2.5 mA IGESF VCE=0 V,VGE=-20V - - -100 nA On-Characterist ics VGE(th) VCE=VGE,lc=600u A 4.5 - 6.5 V Collector-Emmiter saturation Voltage Short Collector current .

Part

MSG25T120FQC

Description

MOSFET



Feature


Features  Low gate charge  FS Tech nology  Saturation voltage:VCE(sat), typ= 1.75V @ IC=25A and TC=25℃  Ro HS product Applications  General pur pose inverters  Induction heating(IH )  UPS Order Codes MSG25T120FQC Ma rking MSG25T120FQC MSG25T120FQC Packag e TO-247 Absolute Ratings(Tc=25℃ Parameter Collector-Emmiter Voltage Symbol Vces MSG25T120FLC Unit 1200 V.
Manufacture

maspower

Datasheet
Download MSG25T120FQC Datasheet




 MSG25T120FQC
Features
Low gate charge
FS Technology
Saturation voltage:VCE(sat),typ= 1.75V @
IC=25A and TC=25
RoHS product
Applications
General purpose inverters
Induction heating(IH)
UPS
Order Codes
MSG25T120FQC
Marking
MSG25T120FQC
MSG25T120FQC
Package
TO-247
Absolute RatingsTc=25℃)
Parameter
Collector-Emmiter Voltage
Symbol
Vces
MSG25T120FLC Unit
1200
V
Collector Current-continuous
Ic T=25
T=100
50
25
A
A
Collector Current-pulse(note 1)
ICM
60
A
Diode forward current
@ TC= 100°C
IF
25
A
Gate-Emmiter Voltage
VGES
±20
V
Turn-off safe area
-
60
A
Power Dissipation
PD TC=25
350
W
Diode Forward Current
TC=100
25
A
Operating and Storage
Temperature Range
Maximum Lead Temperature for
Soldering Purposes
TJ,TSTG
TL
-55~+150
300
Collector current limited by maximum junction temperature
Thermal Characteristic
Parameter
Symbol Tests conditions Min Typ Max Units
Off-Characteristics
H1.02
Maspower
1




 MSG25T120FQC
MSG25T120FQC
Collector-Emmiter
Voltage
Breakdown Voltage
Temperature
Coefficient
Zero Gate Voltage
Collector Current
Gate-body leakage
current, forward
Gate-Emmiter
Threshold Voltage
BVCES
IC=500uA,VGE=0V 1200 - - V
BVCES/TJ
IC=1mA,referenced
to 25
-
0.6
-
V/
VCE=1200V,VGE=0
V,TC=25
-
- 0.2 mA
ICES
TC=100
2 mA
TC=150
- - 2.5 mA
IGESF
VCE=0V,VGE=-20V - - -100 nA
On-Characteristics
VGE(th)
VCE=VGE,lc=600u
A
4.5
-
6.5
V
Collector-Emmiter
saturation
Voltage
Short Collector current
(Note 2)
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGE=15V,IC=25A
VCESAT
Tc=25
TC=150
Ic(sc)
VGE=15V
VCE=600V tsc<
10us Tc=25
Dynamic Characteristics
Cies
Coes
Cres
VCE=25V,
VGE=0V,
f=1.0MHZ
Switching Characteristics
- 1.75 2.5
-2- V
- 2.1 -
160
A
- 1600 2400 pF
- 120 190 pF
- 80 130 pF
Turn-On delay time
td(on)
- 93 - ns
Turn-On rise time
tr
- 77 - ns
Turn-off delay time
Turn-off Fall time
Turn-on energy
td(off)
tf
Eon
VCE=600V,Ic=25A, - 216 - ns
RG=10Ω
Tc=25Inductive
-
108
-
ns
Load
- 2.8 - mJ
Turn-off energy
Eoff
- 1.0 - mJ
Total switching Energy
Etotal
- 3.8 - mJ
VCE=600V,Ic=25A
Total Gate Charge
Qg
,VGE=15V(note3,4 - 120 - nC
)
Anti-Paraller Diode Characteristics and Maximum Ratings
Diode Forward
Voltage
VF
VGE=0V,IF=25A - 1.77 2.8 V
H1.02
Maspower
2




 MSG25T120FQC
MSG25T120FQC
Diode Reverse
recovery time
trr
Reverse recovery
charge
Qrr
Parameter
VGE=0V,VR=800V - 236 - ns
IF=25A
dl=/dt=200/us (note
4)
-
1.3
-
uC
Symbol
Max
Unit
Thermal Resistance,Junction to Case Rth(j-c)
0.4
Thermal Resistance,Junction to
Ambitent
Rth(j-A)
40
Notes:
1: Pulse width limited by maximum junction temperature
2: Allowed number of short circuits:<1000; time between short circuits:>1s.
3: Pulse Test: Pulse Width ≤300us, Duty Cycles2%
4: Essentially independent of operating temperature
/W
/W
Electrical Characteristics(curves)
H1.02
Maspower
3






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