MSG20T120FQC

Features  Low Gate charge  FS Technology  VCE(sat) = 1.7V @ IC = 20A  High Input Impedance  Short circuit withstand time 10 µs MSG20T120FQC N-Channel IGBT Applications  PFC  UPS  Inverter Absolute Maximum Ratings Parameter Collector-emitter voltage Gate-emitter voltage Collector curre TC=25°C TC=100°C Pulsed collector current, pulse time limited by Tjmax Diode forward current @ TC = 100°C Diode pulsed current, Pulse time limited by Tjmax Power dissipati TC=25°C TC=100°C Operating Junction and storage temperature rang Symbol Value Unit VCES VGES 1200 V ±30 40 IC 20 ICM 60 A IF 20 IFM 120 227 PD W 132 TJ -55 to150 °C Tstg -55 to150 Thermal Characteristics Parameter Thermal resistance junction-to-ambien Thermal resistance junction-to-case for IGBT Thermal resistance junction-to-case for Diod Symbol RθJA RθJC RθJC Value 62.5 0.55 0.65 Unit °C/W H1.02 Maspower 1 MSG20T120FQC N-Channel IGBT Electrical Characteristics (Tc =25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Collector-emitter breakdown voltag Gate-emitter threshold voltage BVCES VGE(th) IC = 500μA, VGE = 0V VCE = VGE, IC = 250μA 1200 - 4.5 - V 6.5 Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V - 200 μA Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - 100 nA IC = 20A VGE = 15V TC = 25°C - 1.7 2.0 Collector-emitter saturation voltage VCE(sat) V IC = 20A, VGE = 15V, ...