Power MOSFET
5HB06N8
MOS
H-BRIDGE-
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power
MOSFET
Summary
Device
V(BR)DSS
N-CH
60V
P-C...
Description
5HB06N8
MOS
H-BRIDGE-
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power
MOSFET
Summary
Device
V(BR)DSS
N-CH
60V
P-CH
-60V
QG 9.0nC
RDS(on) 25mΩ @ VGS= 10V 45mΩ @ VGS= 4.5V
12.7nC
50mΩ @ VGS= -10V 75mΩ @ VGS= -4.5V
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive
Applications
DC Motor control DC-AC Inverters
Ordering information
Device 5HB06N8
Device marking
WFS 5HB06N8
Reel size (inches)
13
Tape width Quantity
(mm)
per reel
12
2,500
www.maspowersemi.com
1
5HB06N8
H-BRIDGE-MOS
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C (b)
@ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) @ VGS= 10V; TL=25°C (f)
(c)
Pulsed Drain current @ VGS= 10V; TA=25°C
(b)
Continuous Source current (Body diode) at TA =25°C
Pulsed Source current (Body diode) at TA =25°C (c)
(a)
Power dissipation at TA =25°C
Linear derating factor
(b)
Power dissipation at TA =25°C Linear derating factor
(f)
Power dissipation at TL =25°C Linear derating factor
Operating and storage temperature range
Symbol
V
DSS
V GS
Nchannel
60
±20
Pchannel
-60
±20
ID
4.98
-4.13
3.98
-3.31
3.98
-3.36
4.17
-3.51
I
DM
22.9
-19.6
IS
I
SM
PD
PD
PD
T, T j stg
2.0
-2.0
22.9
-19.6
0.87
6.94
1.35 10.9
0.95
0.98
...
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