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Power MOSFET. 5HB06N8 Datasheet

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Power MOSFET. 5HB06N8 Datasheet






5HB06N8 MOSFET. Datasheet pdf. Equivalent




5HB06N8 MOSFET. Datasheet pdf. Equivalent





Part

5HB06N8

Description

Power MOSFET



Feature


5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRI VE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P -CH -60V QG 9.0nC RDS(on) 25mΩ @ V GS= 10V 45mΩ @ VGS= 4.5V 12.7nC 50m Ω @ VGS= -10V 75mΩ @ VGS= -4.5V De scription This new generation complemen tary MOSFET H-Bridge features low on-re sistance achievable with low gate drive . Features • 2 x N + 2 x P.
Manufacture

maspower

Datasheet
Download 5HB06N8 Datasheet


maspower 5HB06N8

5HB06N8; channels in a SOIC package • Low volt age (VGS = 4.5 V) gate drive Applicatio ns • DC Motor control • DC-AC Inver ters Ordering information Device 5HB06 N8 Device marking WFS 5HB06N8 Reel siz e (inches) 13 Tape width Quantity (mm ) per reel 12 2,500 www.maspowersem i.com 1 5HB06N8 H-BRIDGE-MOS 60V HBRI DGE-DRIVE-2NP-Channel Advanced Power MO SFET Absolute maximum r.


maspower 5HB06N8

atings Parameter Drain-Source voltage G ate-Source voltage Continuous Drain cur rent @ VGS= 10V; TA=25°C (b) @ VGS= 10 V; TA=70°C (b) @ VGS= 10V; TA=25°C (a ) @ VGS= 10V; TL=25°C (f) (c) Pulsed D rain current @ VGS= 10V; TA=25°C (b) C ontinuous Source current (Body diode) a t TA =25°C Pulsed Source current (Body diode) at TA =25°C (c) (a) Power diss ipation at TA =25°C Linea.


maspower 5HB06N8

r derating factor (b) Power dissipation at TA =25°C Linear derating factor (f) Power dissipation at TL =25°C Linear derating factor Operating and storage t emperature range Symbol V DSS V GS Nc hannel 60 ±20 Pchannel -60 ±20 ID 4.98 -4.13 3.98 -3.31 3.98 -3.36 4.17 -3.51 I DM 22.9 -19.6 IS I S M PD PD PD T, T j stg 2.0 -2.0 22.9 -19.6 0.87 6.94 1..

Part

5HB06N8

Description

Power MOSFET



Feature


5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRI VE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P -CH -60V QG 9.0nC RDS(on) 25mΩ @ V GS= 10V 45mΩ @ VGS= 4.5V 12.7nC 50m Ω @ VGS= -10V 75mΩ @ VGS= -4.5V De scription This new generation complemen tary MOSFET H-Bridge features low on-re sistance achievable with low gate drive . Features • 2 x N + 2 x P.
Manufacture

maspower

Datasheet
Download 5HB06N8 Datasheet




 5HB06N8
5HB06N8
MOS
H-BRIDGE-
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power
MOSFET
Summary
Device
V(BR)DSS
N-CH
60V
P-CH
-60V
QG
9.0nC
RDS(on)
25mΩ @ VGS= 10V
45mΩ @ VGS= 4.5V
12.7nC
50mΩ @ VGS= -10V
75mΩ @ VGS= -4.5V
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
2 x N + 2 x P channels in a SOIC package
Low voltage (VGS = 4.5 V) gate drive
Applications
DC Motor control
DC-AC Inverters
Ordering information
Device
5HB06N8
Device marking
WFS
5HB06N8
Reel size
(inches)
13
Tape width Quantity
(mm)
per reel
12
2,500
www.maspowersemi.com
1




 5HB06N8
5HB06N8
H-BRIDGE-MOS
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage
Continuous Drain current @ VGS= 10V; TA=25°C (b)
@ VGS= 10V; TA=70°C (b)
@ VGS= 10V; TA=25°C (a)
@ VGS= 10V; TL=25°C (f)
(c)
Pulsed Drain current @ VGS= 10V; TA=25°C
(b)
Continuous Source current (Body diode) at TA =25°C
Pulsed Source current (Body diode) at TA =25°C (c)
(a)
Power dissipation at TA =25°C
Linear derating factor
(b)
Power dissipation at TA =25°C
Linear derating factor
(f)
Power dissipation at TL =25°C
Linear derating factor
Operating and storage temperature range
Symbol
V
DSS
V
GS
N-
channel
60
±20
P-
channel
-60
±20
ID
4.98
-4.13
3.98
-3.31
3.98
-3.36
4.17
-3.51
I
DM
22.9
-19.6
IS
I
SM
PD
PD
PD
T, T
j stg
2.0
-2.0
22.9
-19.6
0.87
6.94
1.35
10.9
0.95
0.98
7.63
7.81
-55 to 150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
(a)
Junction to ambient
(b)
Junction to ambient
(d)
Junction to ambient
(e)
Junction to ambient
(f)
Junction to lead
Symbol
R
θJA
R
θJA
R
θJA
R
θJA
R
θJL
Value
144
92
106
254
131
128
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state
condition with one active die.
(b) Same as note (a), except the device is measured at t 10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum
junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions
with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state
condition with one active die.
(e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a
steady-state condition with one active die.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with
one active die.
www.maspowersemi.com
2




 5HB06N8
5HB06N8
H-BRIDGE-MOS
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET
N-channel typical characteristics
www.maspowersemi.com
3






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