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Recovery Diode. ESTF60D33B Datasheet

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Recovery Diode. ESTF60D33B Datasheet






ESTF60D33B Diode. Datasheet pdf. Equivalent




ESTF60D33B Diode. Datasheet pdf. Equivalent





Part

ESTF60D33B

Description

Ultrafast Recovery Diode



Feature


Features  Ultrafast Recovery Time  Soft Recovery Characteristics  Low Recovery Loss  Low Forward Voltage High Surge Current Capability  Lo w Leakage Current ESTF60D33E/B Ultrafa st Recovery Diode Applications  Fre ewheeling, Snubber, Clamp  Inversion Welder  Plating Power Supply  Ul trasonic Cleaner and Welder  UPS  PFC Absolute Maximum Ratings Parameter .
Manufacture

EcoSemitek

Datasheet
Download ESTF60D33B Datasheet


EcoSemitek ESTF60D33B

ESTF60D33B; Symbol Test Conditions Values Maximum D.C. Reverse Voltage VR 300 Maximum Repetitive Reverse Voltage VRRM 300 Average Forward Current TC=100°C, P er Diode 30 IF(AV) TC =100°C, Per P ackage 60 RMS Forward Current IF(RMS ) TC=100°C, Per Diode 42 480 Non-R epetitive Surge Forward Current IFSM TC =45°C, t=10ms, 50Hz, Sine Unit V A Power Dissipation Ju.


EcoSemitek ESTF60D33B

nction Temperature Storage Temperature R ange Thermal Resistance Junction-to-Cas e PD TJ TSTG RθJC F60D33E F60D33B 1 56 -55~150 -55~150 0.8 0.46 W ℃ ℃/ W 1 ESTF60D33E/B Ultrafast Recovery D iode Electrical Characteristics(TC=25° C unless otherwise specified) Paramete r Symbol Test Conditions Min. V=300V - Reverse Leakage Current IRM V=300 V, T=125℃ - Forward Vo.


EcoSemitek ESTF60D33B

ltage I=30A - VF I=30A, T=125℃ - Reverse Recovery Time trr IF=1A, V = 30V, di - /dt=-200A/μs Reverse Recove ry Time trr - V=150V, I=30A Max. Re verse Recovery Current IRRM di/dt=-200 A/μs, T=25℃ - Reverse Recovery Tim e Max. Reverse Recovery Current trr - V=150V, I=30A IRRM di/dt=-200A/μs, T=125℃ - Typ. Max. Unit - 10 μA - 10000 1.25 1.8 V 1.12 .

Part

ESTF60D33B

Description

Ultrafast Recovery Diode



Feature


Features  Ultrafast Recovery Time  Soft Recovery Characteristics  Low Recovery Loss  Low Forward Voltage High Surge Current Capability  Lo w Leakage Current ESTF60D33E/B Ultrafa st Recovery Diode Applications  Fre ewheeling, Snubber, Clamp  Inversion Welder  Plating Power Supply  Ul trasonic Cleaner and Welder  UPS  PFC Absolute Maximum Ratings Parameter .
Manufacture

EcoSemitek

Datasheet
Download ESTF60D33B Datasheet




 ESTF60D33B
Features
Ultrafast Recovery Time
Soft Recovery Characteristics
Low Recovery Loss
Low Forward Voltage
High Surge Current Capability
Low Leakage Current
ESTF60D33E/B
Ultrafast Recovery Diode
Applications
Freewheeling, Snubber, Clamp
Inversion Welder
Plating Power Supply
Ultrasonic Cleaner and Welder
UPS
PFC
Absolute Maximum Ratings
Parameter
Symbol Test Conditions Values
Maximum D.C. Reverse
Voltage
VR
300
Maximum Repetitive Reverse
Voltage
VRRM
300
Average Forward Current
TC=100°C, Per Diode
30
IF(AV)
TC =100°C, Per Package
60
RMS Forward Current
IF(RMS)
TC=100°C, Per Diode
42
480
Non-Repetitive Surge Forward
Current
IFSM
TC =45°C, t=10ms, 50Hz,
Sine
Unit
V
A
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance
Junction-to-Case
PD
TJ
TSTG
RθJC
F60D33E
F60D33B
156
-55~150
-55~150
0.8
0.46
W
/W
1




 ESTF60D33B
ESTF60D33E/B
Ultrafast Recovery Diode
Electrical Characteristics(TC=25°C unless otherwise specified)
Parameter
Symbol Test Conditions
Min.
V=300V
-
Reverse Leakage Current IRM
V=300V, T=125
-
Forward Voltage
I=30A
-
VF
I=30A, T=125
-
Reverse Recovery Time
trr
IF=1A, V =30V, di
-
/dt=-200A/μs
Reverse Recovery Time
trr
-
V=150V, I=30A
Max. Reverse Recovery
Current
IRRM di/dt=-200A/μs, T=25
-
Reverse Recovery Time
Max. Reverse Recovery
Current
trr
-
V=150V, I=30A
IRRM di/dt=-200A/μs, T=125-
Typ. Max. Unit
-
10
μA
- 10000
1.25 1.8
V
1.12
-
22
-
ns
35
-
2.5
-
A
70
- ns
6.8
-
A
2




 ESTF60D33B
Electrical characteristics(Curves)
ESTF60D33E/B
Ultrafast Recovery Diode
3






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