ESTF60D33B

Features  Ultrafast Recovery Time  Soft Recovery Characteristics  Low Recovery Loss  Low Forward Voltage  High Surge Current Capability  Low Leakage Current ESTF60D33E/B Ultrafast Recovery Diode Applications  Freewheeling, Snubber, Clamp  Inversion Welder  Plating Power Supply  Ultrasonic Cleaner and Welder  UPS  PFC Absolute Maximum Ratings Parameter Symbol Test Conditions Values Maximum D.C. Reverse Voltage VR 300 Maximum Repetitive Reverse Voltage VRRM 300 Average Forward Current TC=100°C, Per Diode 30 IF(AV) TC =100°C, Per Package 60 RMS Forward Current IF(RMS) TC=100°C, Per Diode 42 480 Non-Repetitive Surge Forward Current IFSM TC =45°C, t=10ms, 50Hz, Sine Unit V A Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance Junction-to-Case PD TJ TSTG RθJC F60D33E F60D33B 156 -55~150 -55~150 0.8 0.46 W ℃ ℃/W 1 ESTF60D33E/B Ultrafast Recovery Diode Electrical Characteristics(TC=25°C unless otherwise specified) Parameter Symbol Test Conditions Min. V=300V - Reverse Leakage Current IRM V=300V, T=125℃ - Forward Voltage I=30A - VF I=30A, T=125℃ - Reverse Recovery Time trr IF=1A, V =30V, di - /dt=-200A/μs Reverse Recovery Time trr - V=150V, I=30A Max. Reverse Recovery Current IRRM di/dt=-200A/μs, T=25℃ - Reverse Recovery Time Max. Reverse Recovery Current trr - V=150V, I=30A IRRM di/dt=-200A/μs, T=125℃ - Typ. Max. Unit - 10 μA - 10000 1.25 1.8 V 1.12 - 22 - ns 35 -...