MS4N1350

MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDSS MS4N1350FW 1500 V MS4N1350 1500 V MS4N1350B 1500 V MS4N1350E 1500 V MS4N1350W 1500 V RDS(on) max. <9Ω <9Ω <9Ω <9Ω <9Ω ID PTOT 4 A 63 W 4 A 140 W 4 A 140 W 4 A 80 W 4 A 140 W ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plastic package ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF Application Switching applications Description MasPower has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summar Order codes Marking MS4N1350 MS4N1350 MS4N1350FW MS4N1350FW MS4N1350E MS4N1350E MS4N1350B MS4N1350B MS4N1350W MS4N1350W TO-220 TO-247 TO-263 TO-3PB TO-3PF Figure 1. Internal schematic diagram (2) (1) (3) Package TO-3PF TO-220 TO-263 TO-3PB TO-247 Packaging Tube Tube Tube Tube Tube 1/13 MS4N1350, MS4N1350FW, MS4N1350B, MS4N1350W, MS4N1350E 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed)...