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N-channel MOSFET. MS4N1350W Datasheet

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N-channel MOSFET. MS4N1350W Datasheet






MS4N1350W MOSFET. Datasheet pdf. Equivalent




MS4N1350W MOSFET. Datasheet pdf. Equivalent





Part

MS4N1350W

Description

N-channel MOSFET



Feature


MS4N1350 MS4N1350E MS4N1350B MS4N1350W M S4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, T O-3PB, TO-3PF Features Type VDSS MS 4N1350FW 1500 V MS4N1350 1500 V MS4N 1350B 1500 V MS4N1350E 1500 V MS4N135 0W 1500 V RDS(on) max. <9Ω <9Ω <9 <9Ω <9Ω ID PTOT 4 A 63 W 4 A 140 W 4 A 140 W 4 A 80 W 4 A 140 W 100% avalanche tested ■ Intri.
Manufacture

maspower

Datasheet
Download MS4N1350W Datasheet


maspower MS4N1350W

MS4N1350W; nsic capacitances and Qg minimized ■ H igh speed switching ■ Fully isolated TO-3PF plastic package ■ Creepage dis tance path is 5.4 mm (typ.) for TO-3PF Application Switching applications De scription MasPower has designed an adva nced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with th e company’s proprietary .


maspower MS4N1350W

edge termination structure, gives the lo west RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summar Order codes Mar king MS4N1350 MS4N1350 MS4N1350FW M S4N1350FW MS4N1350E MS4N1350E MS4N13 50B MS4N1350B MS4N1350W MS4N1350W T O-220 TO-247 TO-263 TO-3PB TO-3PF Figure 1. Internal schematic diagram (2 ) (1) (3) Package.


maspower MS4N1350W

TO-3PF TO-220 TO-263 TO-3PB TO-247 Pac kaging Tube Tube Tube Tube Tube 1/13 MS4N1350, MS4N1350FW, MS4N1350B, MS4N13 50W, MS4N1350E 1 Electrical ratings Table 2. Absolute maximum ratings Symb ol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID D rain current (continuous) at TC = 25 ° C ID Drain current (continuous) at TC = 100 °C IDM (1) Dr.

Part

MS4N1350W

Description

N-channel MOSFET



Feature


MS4N1350 MS4N1350E MS4N1350B MS4N1350W M S4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, T O-3PB, TO-3PF Features Type VDSS MS 4N1350FW 1500 V MS4N1350 1500 V MS4N 1350B 1500 V MS4N1350E 1500 V MS4N135 0W 1500 V RDS(on) max. <9Ω <9Ω <9 <9Ω <9Ω ID PTOT 4 A 63 W 4 A 140 W 4 A 140 W 4 A 80 W 4 A 140 W 100% avalanche tested ■ Intri.
Manufacture

maspower

Datasheet
Download MS4N1350W Datasheet




 MS4N1350W
MS4N1350 MS4N1350E
MS4N1350B MS4N1350W MS4N1350FW
N-channel 1500 V, 6 , 4 A, Power MOSFET
in TO-263,TO-247TO-220, TO-3PB, TO-3PF
Features
Type
VDSS
MS4N1350FW 1500 V
MS4N1350
1500 V
MS4N1350B 1500 V
MS4N1350E 1500 V
MS4N1350W 1500 V
RDS(on)
max.
<9
<9
<9
<9
<9
ID
PTOT
4 A 63 W
4 A 140 W
4 A 140 W
4 A 80 W
4 A 140 W
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF plastic package
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
Switching applications
Description
MasPower has designed an advanced family of
very high voltage Power MOSFETs with
outstanding performances. The strengthened
layout coupled with the company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Table 1. Device summar
Order codes
Marking
MS4N1350
MS4N1350
MS4N1350FW
MS4N1350FW
MS4N1350E
MS4N1350E
MS4N1350B
MS4N1350B
MS4N1350W
MS4N1350W
TO-220
TO-247
TO-263
TO-3PB
TO-3PF
Figure 1. Internal schematic diagram
(2)
(1)
(3)
Package
TO-3PF
TO-220
TO-263
TO-3PB
TO-247
Packaging
Tube
Tube
Tube
Tube
Tube
1/13




 MS4N1350W
MS4N1350, MS4N1350FW, MS4N1350B, MS4N1350W, MS4N1350E
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT
VISO
Total dissipation at TC = 25 °C
Insulation with stand voltage (RMS)
from all three leads to external heat sink
(t=1 s;TC=25 °C)
Derating factor
Tstg storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
Value
TO-220,TO-247
TO-3PF
1500
± 30
4
2.6
10
140
4(1)
2.6 (1)
10 (1)
63
3500
1.12
0.5
-50 to 150
150
Unit
V
V
A
A
A
W
V
W/°C
°C
°C
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Rthj-amb
Tj
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
Maximum lead temperature
for soldering purpose
TO-220 TO-247 TO-263 TO-3PF
0.89
0.63
2
63.5
50
35
50
300
Table 4. Avalanche characteristics
Unit
°C/W
°C/W
°C
Symbol
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
Unit
4
A
450
mJ
2/13




 MS4N1350W
MS4N1350, MS4N1350FW, MS4N1350B, MS4N1350W, MS4N1350E
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Testconditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Zero gate voltage
VDS = Max rating
IDSS
drain current (V = 0) V = Max rating, T =125 °C
IGSS
VGS(th)
RDS(on
Gate-body leakage
current (VDS = 0)
Gate threshold
voltage
static drain-source on
resistance
VGS = ± 30 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.3 A
Min. Typ. Max. Unit
1500
V
10 µA
500 µA
± 100 nA
3
4
5
V
6
9
Table 6. Dynamic
Symbol
Parameter
gfs (1)
Forward
transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss eq.
(2)
Equivalent output
capacitance
Rg
Gate input resistance
Qg
Total gate charge
Qgs
Gate-source charge
Gate-drain charge
Qgd
Test conditions
VDS = 30 V, ID = 1.3 A
Min.
-
VDS = 25 V, f = 1 MHz, VGS =
0
-
VDS=0 to 1200 V, VGS = 0
-
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
-
open drain
VDD = 1200 V, ID = 4 A, VGS
= 10 V
(see Figure 19)
-
Typ.
2.6
939
102
13.2
100
4
29.3
4.6
17
Max. Unit
-
S
pF
- pF
pF
-
pF
-
nC
-
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
3/13






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