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Epitaxial Diode. MM80FU040PC Datasheet

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Epitaxial Diode. MM80FU040PC Datasheet






MM80FU040PC Diode. Datasheet pdf. Equivalent




MM80FU040PC Diode. Datasheet pdf. Equivalent





Part

MM80FU040PC

Description

Common Cathode Fast Recovery Epitaxial Diode

Manufacture

Thinki Semiconductor

Datasheet
Download MM80FU040PC Datasheet


Thinki Semiconductor MM80FU040PC

MM80FU040PC; MM80FU040PC ® MM80FU040PC Pb Pb Fre e Plating Product 80 Ampere,400 Volt C ommon Cathode Fast Recovery Epitaxial D iode APPLICATION · Freewheeling, Snub ber, Clamp · Inversion Welder · PFC Plating Power Supply · Ultrasonic Cl eaner and Welder · Converter & Chopper · UPS TO-3PN/TO-3PB Cathode(Bottom S ide Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · .


Thinki Semiconductor MM80FU040PC

Soft Recovery Characteristics · Low Rec overy Loss · Low Forward Voltage · Hi gh Surge Current Capability · Low Leak age Current Internal Configuration Bas e Backside — Anode Cathode Anode GE NERAL DESCRIPTION MM80FU040PC using th e lastest FRED FAB process(planar passi vation chip) with ultrafast and soft re covery characteristic. ABSOLUTE MAXIMU M RATINGS TC=25°C unles.


Thinki Semiconductor MM80FU040PC

s otherwise specified Symbol Parameter Test Conditions Values Unit VR Ma ximum D.C. Reverse Voltage 400 V V R RM Maximum Repetitive Reverse Voltage 400 V I F(AV) Average Forward Curre nt TC=110°C, Per Diode TC=110°C, Per Package 40 A 80 A IF(RMS) RMS For ward Current TC=110°C, Per Diode 56 A I FSM Non-Repetitive Surge Forward Current TJ=45°C, t=1.



Part

MM80FU040PC

Description

Common Cathode Fast Recovery Epitaxial Diode

Manufacture

Thinki Semiconductor

Datasheet
Download MM80FU040PC Datasheet




 MM80FU040PC
MM80FU040PC
®
MM80FU040PC
Pb
Pb Free Plating Product
80 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-3PN/TO-3PB
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
MM80FU040PC using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
400
V
V RRM
Maximum Repetitive Reverse Voltage
400
V
I F(AV)
Average Forward Current
TC=110°C, Per Diode
TC=110°C, Per Package
40
A
80
A
IF(RMS) RMS Forward Current
TC=110°C, Per Diode
56
A
I FSM
Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine
400
A
PD
Power Dissipation
156
W
TJ
Junction Temperature
-40 to +150
°C
T STG
Storage Temperature Range
-40 to +150
°C
Torque Module-to-Sink
RecommendedM3
1.1
N·m
R θJC
Thermal Resistance
Weight
ELECTRICAL CHARACTERISTICS
Junction-to-Case
0.8
°C /W
6.0
g
TC=25°C unless otherwise specified
Symbol
Parameter
I RM
Reverse Leakage Current
Test Conditions
VR=400V
VR=400V, TJ=125°C
Min. Typ. Max. Unit
--
--
10 µA
--
-- 150 µA
VF
Forward Voltage
I F =40A
IF=40A, TJ=125°C
-- 1.3 1.8
V
-- 1.1
V
t rr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs --
22
--
ns
t rr
Reverse Recovery Time
VR=200V, IF=40A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
--
52
--
ns
-- 4.5 --
A
t rr
Reverse Recovery Time
VR=200V, IF=40A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
--
71
--
ns
--
9
--
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/





 MM80FU040PC
MM80FU040PC
®
120
100
80
60
TJ =125°C
40
TJ =25°C
20
0
0
0.3 0.6 0.9 1.2 1.5
VFV
Fig1. Forward Voltage Drop vs Forward Current
50
VR=200V
TJ =125°C
40
IF=80A
30
20
10
IF=40A
IF=20A
0
0
200 400 600 800 1000
diF/dtA/μs
Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
trr
0.6
IRRM
0.4
Qrr
0.2
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
150
120
IF=80A
90
VR=200V
TJ =125°C
60
IF=40A
30 IF=20A
0
0
200 400 600 800 1000
diF/dtA/μs
Fig2. Reverse Recovery Time vs diF/dt
600
VR=200V
TJ =125°C
500
400
IF=80A
300
IF=40A
IF=20A
200
100
0
0
200 400 600 800 1000
diF/dtA/μs
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/





 MM80FU040PC
MM80FU040PC
®
IF
trr
dIF/dt
Qrr
IRRM
0.9 IRRM
0.25 IRRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters
Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3
http://www.thinkisemi.com/



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