Silicon PIN Photodiode
Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 SFH 213 FA
SFH 213 FA
Radial T1 3/4
Silicon PIN Photodiode
Application...
Description
Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 SFH 213 FA
SFH 213 FA
Radial T1 3/4
Silicon PIN Photodiode
Applications
——Electronic Equipment ——Highbay Industrial ——Industrial Automation (Machine controls, Light
barriers, Vision controls)
——Smoke Detectors ——White Goods
Features:
——Package: black epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Wavelength range (S10%) 750 nm to 1100 nm ——Short switching time (typ. 5 ns) ——5 mm LED plastic package
Ordering Information
Type
Photocurrent
Photocurrent typ.
Ordering Code
Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V
IP
IP
SFH 213 FA ≥ 65 µA
90 µA
Q62702P1671
1 Version 1.3 | 2018-05-04
SFH 213 FA
Maximum Ratings
TA = 25 °C Parameter
Operating Temperature
Storage temperature
Reverse voltage Reverse voltage t ≤ 2 min Total power dissipation ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
Symbol Top
Tstg
VR VR
Ptot VESD
min. max. min. max. max. max.
max.
Values
-40 °C 100 °C -40 °C 100 °C
20 V 50 V
150 mW 2 kV
2 Version 1.3 | 2018-05-04
SFH 213 FA
Characteristics
TA = 25 °C Parameter
Wavelength of max sensitivity Spectral range of sensitivity
Radiant sensitive area Dimensions of active chip area
Half angle
Dark current VR = 20 V
Spectral sensitivity of the chip λ = 870 nm
Quantum yield of the chip λ = 870 nm
Open-circuit voltage
Ee = 0.5 mW/cm²; λ = 870 nm
Short-circuit current
Ee = 0.5 mW/cm²; λ = 870 nm
Rise time
V...
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