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PIN Photodiode. SFH213FA Datasheet

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PIN Photodiode. SFH213FA Datasheet







SFH213FA Photodiode. Datasheet pdf. Equivalent




SFH213FA Photodiode. Datasheet pdf. Equivalent





Part

SFH213FA

Description

Silicon PIN Photodiode

Manufacture

OSRAM

Datasheet
Download SFH213FA Datasheet


OSRAM SFH213FA

SFH213FA; Prowdwuwk.todsartaemn-bolast.tco|mVersio n 1.1 SFH 213 FA   SFH 213 FA Radi al T1 3/4 Silicon PIN Photodiode Appli cations ——Electronic Equipment — Highbay Industrial ——Industrial A utomation (Machine controls, Light barr iers, Vision controls) ——Smoke Det ectors ——White Goods Features: — —Package: black epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——W.


OSRAM SFH213FA

avelength range (S10%) 750 nm to 1100 nm ——Short switching time (typ. 5 ns) ——5 mm LED plastic package Orderi ng Information  Type  Photocurre nt  Photocurrent  typ. Ordering C ode Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V IP IP SFH 213 FA ≥ 65 µA 90 A Q62702P1671  1 Version 1.3 | 2 018-05-04 SFH 213 FA   Maximum Ratings TA .


OSRAM SFH213FA

= 25 °C Parameter Operating Temperature Storage temperature Reverse voltage Re verse voltage t ≤ 2 min Total power d issipation ESD withstand voltage acc. t o ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Symbol Top Tstg VR VR Ptot VESD min. max. min. max. max. max. max. Values -40 °C 100 °C -40 °C 100 °C 20 V 50 V 150 mW 2 kV   2 Version 1.3 | 2018-05-04  SFH 213 FA .



Part

SFH213FA

Description

Silicon PIN Photodiode

Manufacture

OSRAM

Datasheet
Download SFH213FA Datasheet




 SFH213FA
Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1
SFH 213 FA
 
SFH 213 FA
Radial T1 3/4
Silicon PIN Photodiode
Applications
—Electronic Equipment
—Highbay Industrial
—Industrial Automation (Machine controls, Light
barriers, Vision controls)
—Smoke Detectors
—White Goods
Features:
—Package: black epoxy
—ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
—Wavelength range (S10%) 750 nm to 1100 nm
—Short switching time (typ. 5 ns)
—5 mm LED plastic package
Ordering Information
Type
 Photocurrent 
Photocurrent 
typ.
Ordering Code
Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V
IP
IP
SFH 213 FA ≥ 65 µA
90 µA
Q62702P1671
1 Version 1.3 | 2018-05-04





 SFH213FA
SFH 213 FA
 
Maximum Ratings
TA = 25 °C
Parameter
Operating Temperature
Storage temperature
Reverse voltage
Reverse voltage
t ≤ 2 min
Total power dissipation
ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
Symbol
Top
Tstg
VR
VR
Ptot
VESD
min.
max.
min.
max.
max.
max.
max.
Values
-40 °C
100 °C
-40 °C
100 °C
20 V
50 V
150 mW
2 kV

2 Version 1.3 | 2018-05-04





 SFH213FA
SFH 213 FA
 
Characteristics
TA = 25 °C
Parameter
Wavelength of max sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of active chip area
Half angle
Dark current
VR = 20 V
Spectral sensitivity of the chip
λ = 870 nm
Quantum yield of the chip
λ = 870 nm
Open-circuit voltage
Ee = 0.5 mW/cm²; λ = 870 nm
Short-circuit current
Ee = 0.5 mW/cm²; λ = 870 nm
Rise time
VR = 20 V; RL = 50 Ω; λ = 850 nm
Fall time
VR = 20 V; RL = 50 Ω; λ = 850 nm
Forward voltage
IF = 100 mA; E = 0

Capacitance
VR = 0 V; f = 1 MHz; E = 0
Temperature coefficient of voltage
Temperature coefficient of short-circuit current
λ = 870 nm
Noise equivalent power
VR = 20 V; λ = 870 nm
Detection limit
VR = 20 V; λ = 870 nm
3 Version 1.3 | 2018-05-04
Symbol
λS max
λ10%
A
LxW
φ
IR
Sλ
η
VO
ISC
tr
tf
VF
C0
TCV
TCI
NEP
D*
typ.
typ.
typ.
typ.
typ.
typ.
max.
typ.
Values
900 nm
750 ... 1100
nm
1.00 mm²
1x1
mm x mm
10 °
1 nA
5 nA
0.65 A / W
typ.
0.93 Electrons
/ Photon
min.
300 mV
typ.
380 mV
typ.
42 µA
typ.
0.005 µs
typ.
0.005 µs
typ.
1.3 V
typ.
11 pF
typ.
-2.6 mV / K
typ.
0.1 % / K
typ.
0.028 pW /
Hz1/2
typ.
3.6e12 cm x
Hz1/2 / W



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