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N-Channel MOSFET. 2SK1528L Datasheet

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N-Channel MOSFET. 2SK1528L Datasheet







2SK1528L MOSFET. Datasheet pdf. Equivalent




2SK1528L MOSFET. Datasheet pdf. Equivalent





Part

2SK1528L

Description

Silicon N-Channel MOSFET

Manufacture

Renesas

Datasheet
Download 2SK1528L Datasheet


Renesas 2SK1528L

2SK1528L; 2SK1528(L), 2SK1528(S) Silicon N Channel MOS FET Application High speed power s witching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and D C-DC converter Outline REJ03G0951-0200 (Previous: ADE-208-1291) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS000 4AE-A (Package name: LDPAK(L.


Renesas 2SK1528L

)) RENESAS Package code: PRSS0004AE-B ( Package name: LDPAK(S)-(1)) 4 D 4 G 12 3 123 S 1. Gate 2. Drain 3. Sour ce 4. Drain Rev.2.00 Sep 07, 2005 page 1 of 7 2SK1528(L), 2SK1528(S) Absolut e Maximum Ratings Item Drain to source voltage Gate to source voltage Drain c urrent Drain peak current Body to drain diode reverse drain current Channel di ssipation Channel .


Renesas 2SK1528L

temperature Storage temperature Notes: 1 . PW ≤ 10 µs, duty cycle ≤ 1% 2. V alue at TC = 25°C Electrical Character istics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Min Typ Drain to source breakdown voltage V(BR)DSS 900 — Gate to source break down voltage V(BR)GSS ±30 — Gate t o source leak current IGSS — — Zero gate voltage drain current .



Part

2SK1528L

Description

Silicon N-Channel MOSFET

Manufacture

Renesas

Datasheet
Download 2SK1528L Datasheet




 2SK1528L
2SK1528(L), 2SK1528(S)
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
REJ03G0951-0200
(Previous: ADE-208-1291)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
D
4
G
12
3
123
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7





 2SK1528L
2SK1528(L), 2SK1528(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol Min
Typ
Drain to source breakdown voltage V(BR)DSS 900
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on state
resistance
RDS(on)
3.0
Forward transfer admittance
|yfs|
1.7
2.7
Input capacitance
Ciss
740
Output capacitance
Coss
305
Reverse transfer capacitance
Crss
150
Turn-on delay time
td(on)
15
Rise time
tr
60
Turn-off delay time
td(off)
100
Fall time
tf
80
Body to drain diode forward voltage VDF
0.9
Body to drain diode reverse recovery trr
time
800
Note: 3. Pulse test
Ratings
900
±30
4
10
4
60
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
4.0
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V *3
S
ID = 2 A, VDS = 20 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2 A, VGS = 10 V,
ns RL = 15
ns
ns
V IF = 4 A, VGS = 0
ns IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7





 2SK1528L
2SK1528(L), 2SK1528(S)
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
5
10 V
4
6 V Pulse Test
5V
3
4.5 V
2
1
4V
VGS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
5A
16
Pulse Test
12
8
2A
4
ID = 1 A
0
4
8
12
16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
50
20
10
5
2
1
0.5
0.2
0.1
Ta = 25°C
DC
PW
=
Operation
10
(T
1
ms
m1s001µ0sµs
(1 Shot)
C = 25°C)
0.05
1 3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 20 V
Pulse Test
4
3
2
75°C
TC = 25°C
1
–25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
VGS = 10 V
5
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current ID (A)



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