SQJ415EP

www.vishay.com SQJ415EP Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Package -40 0.0140 0.0200 -30 Single PowerPAK SO-8L G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current TC = 25 °C a TC = 125 °C ID Continuous source current (diode conduction) a IS Pulsed drain current b IDM Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e L = 0.1 mH TC = 25 °C TC = 125 °C IAS EAS PD TJ, Tstg LIMIT -40 ± 20 -30 -23 -30 -120 -25 31.2 45 15 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL RthJA RthJC LIMIT 70 3.3 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is expo...