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N-Channel MOSFET. SQJA66EP Datasheet

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N-Channel MOSFET. SQJA66EP Datasheet







SQJA66EP MOSFET. Datasheet pdf. Equivalent




SQJA66EP MOSFET. Datasheet pdf. Equivalent





Part

SQJA66EP

Description

Automotive N-Channel MOSFET

Manufacture

Vishay

Datasheet
Download SQJA66EP Datasheet


Vishay SQJA66EP

SQJA66EP; www.vishay.com SQJA66EP Vishay Siliconi x Automotive N-Channel 60 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6. 15 mm 1 Top View 5.13 mm D 1 2S 3S 4 S G Bottom View FEATURES • TrenchFET ® Gen IV Power MOSFET • AEC-Q101 qua lified • 100 % Rg and UIS tested • Material categorization: for definit ions of compliance please see www.visha y.com/doc?99912 D PRODUCT SUMM.


Vishay SQJA66EP

ARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration 60 0.0030 75 Sing le G N-Channel MOSFET S ORDERING INFO RMATION Package Lead (Pb)-free and halo gen-free PowerPAK SO-8L SQJA66EP (f or detailed order number please see www .vishay.com/doc?79776) ABSOLUTE MAXIMU M RATINGS (TC = 25 °C, unless otherwis e noted) PARAMETER SYMBOL Drain-sour ce voltage VDS Gate-s.


Vishay SQJA66EP

ource voltage Continuous drain current VGS TC = 25 °C a TC = 125 °C ID Co ntinuous source current (diode conducti on) IS Pulsed drain current b IDM S ingle pulse avalanche current Single pu lse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 125 °C PD Operating juncti on and storage temperature range Solder ing recommendations (p.



Part

SQJA66EP

Description

Automotive N-Channel MOSFET

Manufacture

Vishay

Datasheet
Download SQJA66EP Datasheet




 SQJA66EP
www.vishay.com
SQJA66EP
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® Gen IV Power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
60
0.0030
75
Single
G
N-Channel MOSFET
S
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8L
SQJA66EP
(for detailed order number please see www.vishay.com/doc?79776)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage
Continuous drain current
VGS
TC = 25 °C a
TC = 125 °C
ID
Continuous source current (diode conduction)
IS
Pulsed drain current b
IDM
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 125 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TJ, Tstg
LIMIT
60
± 20
75
56
62
300
28
39.2
68
22
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
68
2.2
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S20-0884-Rev. A, 23-Nov-2020
1
Document Number: 77589
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 SQJA66EP
www.vishay.com
SQJA66EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 60 V
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 10 A
VGS = 10 V
ID = 10 A, TJ = 125 °C
VGS = 10 V
ID = 10 A, TJ = 175 °C
VDS = 15 V, ID = 10 A
60
-
-
V
2.3
2.8
3.3
-
-
± 100 nA
-
-
1
-
-
50
μA
-
-
500
30
-
-
A
-
0.0024 0.0030
-
- 0.0055
-
- 0.0069
-
75
-
S
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
tr
Turn-off delay time c
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 30 V, ID = 10 A
f = 1 MHz
VDD = 30 V, RL = 3
ID 10 A, VGEN = 10 V, Rg = 1
-
3854 5400
-
1595 2250 pF
-
105 150
-
64.9 98
-
17.4
-
nC
-
14.9
-
0.25 0.52 0.80
-
17
30
-
6
10
ns
-
32
50
-
8
15
Pulsed current a
Forward voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
ISM
VSD
trr
Qrr
ta
tb
IRM(REC)
IF = 10 A, VGS = 0
IF = 8 A, di/dt = 100 A/μs
-
-
300
A
-
0.8
1.2
V
-
56
110
ns
-
61
125 nC
-
24
-
ns
-
32
-
-
-1.9
-
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0884-Rev. A, 23-Nov-2020
2
Document Number: 77589
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 SQJA66EP
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJA66EP
Vishay Siliconix
Axis Title
Axis Title
350
10000
250
10000
VGS = 10 V thru 6 V
280
200
VGS = 5 V
1000
210
150
1000
140
70
0
0
100
VGS = 4 V
2
4
6
8
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
10
100
50
0
0
TC = 125 °C
TC = 25 °C
TC = -55 °C
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
100
10
10
300
240
180
120
60
0
0
Axis Title
TC = -55 °C
10000
TC = 25 °C
1000
TC = 125 °C
100
20
40
60
80
ID - Drain Current (A)
Transconductance
10
100
0.015
Axis Title
10000
0.012
0.009
1000
0.006
0.003
100
VGS = 10 V
0
10
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
10 000
1000
100
Axis Title
Ciss
Coss
Crss
10000
1000
100
10
0
12
24
36
48
VDS - Drain-to-Source Voltage (V)
Capacitance
10
60
Axis Title
10
8
ID = 10 A
VDS = 30 V
6
4
2
0
0
14
28
42
56
Qg - Total Gate Charge (nC)
Gate Charge
10000
1000
100
10
70
S20-0884-Rev. A, 23-Nov-2020
3
Document Number: 77589
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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