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N-Channel MOSFET. SQJA64EP Datasheet

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N-Channel MOSFET. SQJA64EP Datasheet






SQJA64EP MOSFET. Datasheet pdf. Equivalent




SQJA64EP MOSFET. Datasheet pdf. Equivalent





Part

SQJA64EP

Description

Automotive N-Channel MOSFET

Manufacture

Vishay

Datasheet
Download SQJA64EP Datasheet


Vishay SQJA64EP

SQJA64EP; www.vishay.com SQJA64EP Vishay Siliconi x Automotive N-Channel 60 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6. 15 mm 1 Top View 5.13 mm D 1 2S 3S 4 S G Bottom View FEATURES • TrenchFET ® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Materia l categorization: for definitions of co mpliance please see www.vishay.com/doc? 99912 D PRODUCT SUMMARY VDS .


Vishay SQJA64EP

(V) RDS(on) (Ω) at VGS = 10 V ID (A) pe r leg Configuration Package 60 0.0320 15 Single PowerPAK SO-8L G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAM ETER SYMBOL Drain-source voltage Gate -source voltage Continuous drain curren t a Continuous source current (diode co nduction) a Pulsed drain current b Sing le pulse avalanche c.


Vishay SQJA64EP

urrent Single pulse avalanche energy Max imum power dissipation b Operating junc tion and storage temperature range Sold ering recommendations (peak temperature ) d, e TC = 25 °C TC = 125 °C L = 0. 1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 15 15 15 40 13 8.4 45 15 -55 to +175 260 UNIT V A mJ W °C THERMAL RE SISTANCE RATINGS PARAME.



Part

SQJA64EP

Description

Automotive N-Channel MOSFET

Manufacture

Vishay

Datasheet
Download SQJA64EP Datasheet




 SQJA64EP
www.vishay.com
SQJA64EP
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
ID (A) per leg
Configuration
Package
60
0.0320
15
Single
PowerPAK SO-8L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current a
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
60
± 20
15
15
15
40
13
8.4
45
15
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
70
3.3
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-0950-Rev. A, 19-Jun-17
1
Document Number: 77803
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 SQJA64EP
www.vishay.com
SQJA64EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 60 V
VGS = 0 V VDS = 60 V, TJ = 125 °C
VGS = 0 V VDS = 60 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 4 A
VGS = 10 V
ID = 4 A, TJ = 125 °C
VGS = 10 V
ID = 4 A, TJ = 175 °C
VDS = 15 V, ID = 4 A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
tr
Turn-off delay time c
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 30 V, ID = 3 A
f = 1 MHz
VDD = 30 V, RL = 20 Ω
ID 1.5 A, VGEN = 10 V, Rg = 1 Ω
Pulsed current a
Forward voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
ISM
VSD
trr
Qrr
ta
tb
IRM(REC)
IF = 4 A, VGS = 0 V
IF = 3 A, di/dt = 100 A/μs
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
MIN.
60
2.5
-
-
-
-
5
-
-
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
3.0
3.5
-
± 100 nA
-
1
-
50
μA
-
150
-
-
A
0.0259 0.0320
- 0.0527 Ω
- 0.0650
13
-
S
508
670
206
270
pF
14
20
7.6
12
2.4
-
nC
1.1
-
1.1
1.7
Ω
9
15
3
10
ns
15
25
6
12
-
40
A
0.89
1.2
V
26
60
ns
20
45
nC
15
-
ns
11
-
ns
-1.45
-
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0950-Rev. A, 19-Jun-17
2
Document Number: 77803
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 SQJA64EP
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJA64EP
Vishay Siliconix
40
32
24
16
8
0
0
Axis Title
VGS = 10 V thru 6 V
10000
VGS = 5 V
1000
100
VGS = 4 V
10
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
0.10
Axis Title
10000
0.08
0.06
1000
0.04
0.02
VGS = 10 V
100
0.00
0
6
12
18
24
ID - Drain Current (A)
2nd line
10
30
On-Resistance vs. Drain Current
Axis Title
600
10000
Ciss
480
1000
360
240
120
0
0
Coss
100
Crss
12
24
36
48
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
60
10
ID = 3 A
VDS = 30 V
8
Axis Title
6
4
2
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
10
Axis Title
25
10000
20
1000
15
10
TC = 25 °C
5
TC = 125 °C
TC = -55 °C
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
100
10
10
2.5
ID = 4 A
2.1
1.7
Axis Title
VGS = 10 V
10000
1000
1.3
100
0.9
0.5
10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S17-0950-Rev. A, 19-Jun-17
3
Document Number: 77803
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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