Document
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
Plastic Medium-Power Complementary Silicon Transistors
Designed for general−purpose amplifier and low−speed switching applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available*
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DARLINGTON 5 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
60−80−100 VOLTS, 65 WATTS
MARKING DIAGRAM
1 2 3
4
TO−220AB CASE 221A
STYLE 1
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
TIP12xG AYWW
TIP12x x A Y WW G
= Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 9
Publication Order Number: TIP120/D
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
MAXIMUM RATINGS
Rating
TIP120, TIP121, TIP122,
Symbol
TIP125 TIP126 TIP127
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
− Peak
VCEO VCB VEB IC
60
80
100
Vdc
60
80
100
Vdc
5.0
Vdc
5.0
Adc
8.0
Base Current
Total Power Dissipation @ TC = 25°C Derate above 25°C
IB
120
mAdc
PD
65
W
0.52
W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
PD
2.0
W
0.016
W/°C
Unclamped Inductive Load Energy (Note 1)
E
50
mJ
Operating and Storage Junction, Temperature Range THERMAL CHARACTERISTICS
Characteristic
TJ, Tstg Symbol
– 65 to + 150 Max
°C Unit
Thermal Resistance, Junction−to−Case
RqJC
1.92
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP120, TIP125
60
−
TIP121, TIP126
80
−
TIP122, TIP127
100
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0)
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
ICEO
mAdc
−
0.5
−
0.5
−
0.5
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0)
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
ICBO
mAdc
−
0.2
−
0.2
−
0.2
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc)
IEBO hFE VCE(sat)
−
2.0
1000
−
1000
−
−
2.0
−
4.0
mAdc −
Vdc
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
−
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
Cob
TIP120, TIP121, TIP122
4.0
−
−
−
300
pF
−
200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
COLLECTOR
COLLECTOR
BASE
BASE
≈ 8.0 k ≈ 120
≈ 8.0 k ≈ 120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ORDERING INFORMATION Device
TIP120 TIP120G
TIP121 TIP121G
TIP122 TIP122G
TIP125 TIP125G
TIP126 TIP126G
TIP127 TIP127G
TA TC 4.0 80
Package
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
Shipping 50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Unit.