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NPN Transistor. TIP127G Datasheet

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NPN Transistor. TIP127G Datasheet






TIP127G Transistor. Datasheet pdf. Equivalent




TIP127G Transistor. Datasheet pdf. Equivalent





Part

TIP127G

Description

NPN Transistor



Feature


TIP120, TIP121, TIP122 (NPN); TIP125, TI P126, TIP127 (PNP) Plastic Medium-Powe r Complementary Silicon Transistors Des igned for general−purpose amplifier a nd low−speed switching applications. Features • High DC Current Gain − h FE = 2500 (Typ) @ IC = 4.0 Adc • Coll ector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − T.
Manufacture

ON Semiconductor

Datasheet
Download TIP127G Datasheet


ON Semiconductor TIP127G

TIP127G; IP121, TIP126 = 100 Vdc (Min) − TIP122 , TIP127 • Low Collector−Emitter Sa turation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Constructi on with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are A vailable* www.onsemi.com DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRA NSISTORS 60−80−100 VOLTS, 65 WATTS .


ON Semiconductor TIP127G

MARKING DIAGRAM 1 2 3 4 TO−220AB CA SE 221A STYLE 1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR T IP12xG AYWW TIP12x x A Y WW G = Devic e Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Fre e Package ORDERING INFORMATION See det ailed ordering and shipping information on page 3 of this data sheet. *For ad ditional information o.


ON Semiconductor TIP127G

n our Pb−Free strategy and soldering d etails, please download the ON Semicond uctor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semi conductor Components Industries, LLC, 2 014 1 November, 2014 − Rev. 9 Publ ication Order Number: TIP120/D TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) MAXIMUM RATINGS Rating TIP120, TIP121, TIP122,.

Part

TIP127G

Description

NPN Transistor



Feature


TIP120, TIP121, TIP122 (NPN); TIP125, TI P126, TIP127 (PNP) Plastic Medium-Powe r Complementary Silicon Transistors Des igned for general−purpose amplifier a nd low−speed switching applications. Features • High DC Current Gain − h FE = 2500 (Typ) @ IC = 4.0 Adc • Coll ector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − T.
Manufacture

ON Semiconductor

Datasheet
Download TIP127G Datasheet




 TIP127G
TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
hFE = 2500 (Typ) @ IC
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
= 80 Vdc (Min) TIP121, TIP126
= 100 Vdc (Min) TIP122, TIP127
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
PbFree Packages are Available*
www.onsemi.com
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 65 WATTS
MARKING
DIAGRAM
1
2
3
4
TO220AB
CASE 221A
STYLE 1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
TIP12xG
AYWW
TIP12x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 Rev. 9
Publication Order Number:
TIP120/D




 TIP127G
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
MAXIMUM RATINGS
Rating
TIP120, TIP121, TIP122,
Symbol
TIP125 TIP126 TIP127
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current Continuous
Peak
VCEO
VCB
VEB
IC
60
80
100
Vdc
60
80
100
Vdc
5.0
Vdc
5.0
Adc
8.0
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB
120
mAdc
PD
65
W
0.52
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
W
0.016
W/°C
Unclamped Inductive Load Energy (Note 1)
E
50
mJ
Operating and Storage Junction, Temperature Range
THERMAL CHARACTERISTICS
Characteristic
TJ, Tstg
Symbol
65 to +150
Max
°C
Unit
Thermal Resistance, JunctiontoCase
RqJC
1.92
°C/W
Thermal Resistance, JunctiontoAmbient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP120, TIP125
60
TIP121, TIP126
80
TIP122, TIP127
100
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
ICEO
mAdc
0.5
0.5
0.5
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
ICBO
mAdc
0.2
0.2
0.2
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
IEBO
hFE
VCE(sat)
2.0
1000
1000
2.0
4.0
mAdc
Vdc
BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
2.5
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
Cob
TIP120, TIP121, TIP122
4.0
300
pF
200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
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2




 TIP127G
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
COLLECTOR
COLLECTOR
BASE
BASE
8.0 k 120
8.0 k 120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ORDERING INFORMATION
Device
TIP120
TIP120G
TIP121
TIP121G
TIP122
TIP122G
TIP125
TIP125G
TIP126
TIP126G
TIP127
TIP127G
TA TC
4.0 80
Package
TO220
TO220
(PbFree)
TO220
TO220
(PbFree)
TO220
TO220
(PbFree)
TO220
TO220
(PbFree)
TO220
TO220
(PbFree)
TO220
TO220
(PbFree)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 2. Power Derating
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3






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