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TIP127G Dataheets PDF



Part Number TIP127G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPN Transistor
Datasheet TIP127G DatasheetTIP127G Datasheet (PDF)

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Ad.

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.com DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 65 WATTS MARKING DIAGRAM 1 2 3 4 TO−220AB CASE 221A STYLE 1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR TIP12xG AYWW TIP12x x A Y WW G = Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 November, 2014 − Rev. 9 Publication Order Number: TIP120/D TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) MAXIMUM RATINGS Rating TIP120, TIP121, TIP122, Symbol TIP125 TIP126 TIP127 Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous − Peak VCEO VCB VEB IC 60 80 100 Vdc 60 80 100 Vdc 5.0 Vdc 5.0 Adc 8.0 Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C IB 120 mAdc PD 65 W 0.52 W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 W 0.016 W/°C Unclamped Inductive Load Energy (Note 1) E 50 mJ Operating and Storage Junction, Temperature Range THERMAL CHARACTERISTICS Characteristic TJ, Tstg Symbol – 65 to + 150 Max °C Unit Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0) VCEO(sus) Vdc TIP120, TIP125 60 − TIP121, TIP126 80 − TIP122, TIP127 100 − Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 ICEO mAdc − 0.5 − 0.5 − 0.5 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 ICBO mAdc − 0.2 − 0.2 − 0.2 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc) Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc) IEBO hFE VCE(sat) − 2.0 1000 − 1000 − − 2.0 − 4.0 mAdc − Vdc Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.5 Vdc DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127 Cob TIP120, TIP121, TIP122 4.0 − − − 300 pF − 200 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% www.onsemi.com 2 TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) COLLECTOR COLLECTOR BASE BASE ≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ORDERING INFORMATION Device TIP120 TIP120G TIP121 TIP121G TIP122 TIP122G TIP125 TIP125G TIP126 TIP126G TIP127 TIP127G TA TC 4.0 80 Package TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Unit.


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